ISOCOM IS824, IS814, IS844 Datasheet

3/11/99

ISP814X, ISP824X, ISP844X
ISP814, ISP824, ISP844

0.26

20.32

19.32

3.35

4.0

3.0

0.5

13°
Max

7.0

6.0

2.54

1.2

0.5

3.0

1.2

3.0

3.35

7.0

6.0

0.5

0.5

7.62

0.26

13°
Max

2.54

ISP814X

ISP814

ISP824X

ISP824

3.0

10.16

9.16

4.0

3.0

3.35

0.5

7.0

6.0

7.62

1.2

13°
Max

0.5

0.26

2.54

ISP844X

ISP844

Dimensions in mm

HIGH DENSITY A.C. INPUT

PHOTOTRANSISTOR OPTICALLY

COUPLED ISOLATORS

1
2
3

7
8

16
15

10

4 13

11

12

14

9

6

5

4

8
7

6

2

1

3

5

4
3

1
2

APPROVALS

l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

l VDE 0884 approval pending

l ISP814X - Certified to EN60950 by the

following Test Bodies :­Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
ISP824X, ISP844X - EN60950 pending

DESCRIPTION

The ISP814, ISP824, ISP844 series of optically
coupled isolators consist of two infrared light
emitting diodes connected in inverse parallel
and NPN silicon photo transistors in space
efficient dual in line plastic packages.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

RMS

,7.5kV

PK

)

l AC or polarity insensitive input

l All electrical parameters 100% tested

l Custom electrical selections available

APPLICATIONS

l Computer terminals

l Industrial systems controllers

l Telephone sets, Telephone exchangers

l Signal transmission between systems of

different potentials and impedances

5.08

4.08

4.0

3.0

7.62

DB91070M-AAS/ A1

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, TS25 1YD England Tel: [phone]

Fax : [phone] e-mail [e-mail]

http://www.isocom.com

OPTION G

7.62

SURFACE MOUNT

OPTION SM

10.16

10.46

9.86

0.26

0.6

0.1

1.25

0.75

DB91070M-AAS/A1

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.4 V IF = ± 20mA

Output Collector-emitter Breakdown (BV

CEO

) 35 V IC = 1mA

( Note 2 )

Emitter-collector Breakdown (BV

ECO

) 6 V IE = 100µA

Collector-emitter Dark Current (I

CEO

) 100 nA VCE = 20V

Coupled Current Transfer Ratio (CTR) (Note 2)

ISP814, ISP824, ISP844 20 300 % ± 1mAIF , 5V V

CE

ISP814A, ISP824A, ISP844A 50 150 %

Collector-emitter Saturation VoltageVCE

(SAT)

0.2 V ± 20mAIF , 1mAI

C

Input to Output Isolation Voltage V

ISO

5300 V

RMS

See note 1

7500 V

PK

See note 1

Input-output Isolation Resistance R

ISO

5x10

10

Ω V

IO

= 500V (note 1)

Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC= 10mA, RL= 100Ω

3/11/99

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current ± 50mA
Power Dissipation 70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV

CEO

35V

Emitter-collector Voltage BV

ECO

6V

Power Dissipation 150mW

POWER DISSIPATION

Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)