ISOCOM IS725 Datasheet

7/12/00

IS725

HIGH VOLTAGE DARLINGTON

OUTPUT OPTICALLY COUPLED

ISOLATOR

APPROVALS

l UL recognised, File No. E91231

DESCRIPTION

The IS725 is an optically coupled isolator
consisting of infrared light emitting diode and a
high voltage NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a standard 6pin dual in line
plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

l High Current Transfer Ratio ( 1000% min)

l High BV

l Low collector dark current :-

1µA max. at 200V V

l Low input current 1mA I

(300V min.)

CEO

CE

,7.5kV

RMS

F

PK

)

APPLICATIONS

l Modems

l Copiers, facsimiles

l Numerical control machines

l Signal transmission between systems of

different potentials and impedances

2.54

7.0

6.0

Dimensions in mm

1

6

2 5
3 4

1.2

7.62

6.62

4.0

7.62

3.0
13°

Max

3.0

0.5

3.35

0.5

0.26

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-baseVoltage BV
Collector Current I
Power Dissipation 300mW

C

CEO

CBO

ECO

300V
300V
6V
150mA

OPTION SM

SURFACE MOUNT

0.6

0.1

10.46

9.86

1.25

0.75

OPTION G

7.62

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, TS25 1YD England Tel: [phone]

Fax : [phone] e-mail [e-mail]

http://www.isocom.com

POWER DISSIPATION

Total Power Dissipation 350mW

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB91065m-AAS/A1

7/12/00

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.4 V IF = 10mA

Reverse Voltage (VR) 6 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V

Output Collector-emitter Breakdown (BV

Collector-base Breakdown (BV
Emitter-base Breakdown (BV

EBO

Collector-emitter Dark Current (I

) 300 V IC = 1mA

CEO

) 300 V IC = 0.1mA

CBO

) 6 V IE = 0.1mA

) 1 µA VCE = 200V

CEO

Coupled Current Transfer Ratio (CTR) 1000 4000 % 1mA IF , 2V V

Collector-emitter Saturation VoltageV

Input to Output Isolation Voltage V

Input-output Isolation Resistance R

CE(SAT)

5300 V

ISO

7500 V

10

5x10

ISO

1.2 V 20mA IF , 100mA I

RMS

PK

Ω V

See note 1
See note 1

= 500V (note 1)

IO

Input-output Capacitance Cf 1 pF V = 0, f =1MHz

Cut-off frequency fc 1 kHz VCE = 2V, IC= 20mA,

RL = 100Ω, R

Output Rise Time tr 300 µs VCE = 2V, IC= 20mA,
Output Fall Time tf 100 µs RL = 100Ω, R

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

CE

= open

BE

= open

BE

C

Input

100Ω

FIGURE 1

V

CC

IC = 20mA

Output

Input

Output

10%

90%

t

on

t

r

t

off

t

f

10%

90%

DB91065m-AAS/A1