ISOCOM IS658A Datasheet

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

7/12/00

DB91078-AAS/A2

SIDE LOOK MATCHED INFRARED

EMITTER DETECTOR PAIR

PHOTOTRANSISTOR OUTPUT

IS658A
IS659B

Dimensions in mm

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -40°C to + 85°C
Operating Temperature -25°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 50mA
Reverse Voltage 5V
Power Dissipation 75mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV

CEO

30V

Emitter-collector Voltage BV

ECO

5V

Collector Current I

C

20mA

Power Dissipation 75mW

DESCRIPTION

The IS658A ( Gallium Arsenide Emitting
Diode ) and the IS659B ( NPN Silicon Photo
Transistor ) are a mechanically and spectrally
matched emitter detector side looking pair.

FEATURES

l Side looking package.

l Detector has tinted plastic package for

visible light cut out

l LED has high output, Radiant Intensity :-

IE = 0.7mW min. at IF = 20mA

l All electrical parameters are 100% tested

APPLICATIONS

l Floppy disk drives

l Infrared applied systems

l VCRs, Video camera

l Optoelectronic switches

ISTS658A ISTS659B

1.6

0.8

2.15

3.0

2.8

0.3
max

R 0.8

C 0.5

4.0

0.8
max

16.5
min

0.5
min

2.54

1.7

1.15

1.5

0.75

60° 0.15

0.4

R 0.5

0.8

1.4

0.45

0.8

2

21

1

12

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB91078-AAS/A2

7/12/00

PARAMETER MIN TYP MAX UNITS TEST CONDITION

IS658A Forward Voltage (VF) 1.2 1.6 V IF = 20mA
Emitter Reverse Current (IR) 100 µA VR = 5V

Radiant Flux (IE) 0.7 mW/sr IF = 20mA
Peak Emission Wavelength 940 nm IF = 20mA

Spectrum Radiation Bandwidth 50 nm IF = 20mA
Beam Emission Angle ±30 deg.

IS659B Collector-emitter Breakdown (BV

CEO

) 30 V IC = 1mA

Detector ( Note 1 ) Ee = 0mW/cm

2

Emitter-collector Breakdown (BV

ECO

) 5 V IE = 100µA

Ee = 0mW/cm

2

Collector-emitter Dark Current (I

CEO

) 100 nA VCE = 10V

Ee = 0mW/cm

2

On-State Collector Current IC ( ON ) 0.2 mA 5V V

CE ,

λ = 940nm

Ee = 1mW/cm

2

Collector-emitter Saturation Voltage V

CE(SAT)

0.4 V IC = 0.1mA
Ee = 0.5mW/cm

2

Rise Time tr 3 µs VCC= 2V, IC= 2mA,
Fall Time tf 3.5 µs RL = 100Ω

Peak Sensitivity Wavelength 940 nm IF = 20mA
Beam Acceptance Angle ±15 deg.

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

Note 1 Special Selections are available on request. Please consult the factory.