ISOCOM IS654A, IS655A Datasheet

7/12/00

IS654A
IS655A

3mm DIA. MATCHED INFRARED

EMITTER DETECTOR PAIR

PHOTOTRANSISTOR OUTPUT

Dimensions in mm

4.0

DESCRIPTION

The IS654A ( Gallium Arsenide Emitting
Diode ) and the IS655A ( NPN Silicon Photo
Transistor ) are a mechanically and spectrally
matched emitter detector end looking pair.

FEATURES

l T-1 standard 3mm DIA.

l Detector has dark plastic package for

visible light cut out

l LED has high output, Radiant Intensity :-

IE = 2mW/sr min. at IF = 20mA

l All electrical parameters are 100% tested

APPLICATIONS

l Floppy disk drives

l Infrared applied systems

l VCRs, Video camera

l Optoelectronic switches

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -40°C to + 85°C
Operating Temperature -25°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

3.0

IS654A

1
2

2

1

5.3 1.0 min.12.7min.

1.0

1.5
max

2.6 1.5

1

- Anode

- Cathode

2

Forward Current 60mA
Reverse Voltage 5V
Power Dissipation 90mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Emitter-collector Voltage BV
Collector Current I
Power Dissipation 50mW

C

CEO
ECO

30V
5V
20mA

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

IS655A

- Emitter

1
2

- Collector

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

2

1

DB92102-AAS/A2

7/12/00

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

IS654A Forward Voltage (VF) 1.2 1.6 V IF = 20mA
Emitter Reverse Current (IR) 100 µA VR = 5V

Radiant Flux (IE) 1.5 mW/sr IF = 40mA
Peak Emission Wavelength 940 nm IF = 40mA

Spectrum Radiation Bandwidth 50 nm IF = 40mA
Beam Emission Angle ±20 deg.

IS655A Collector-emitter Breakdown (BV

Detector ( Note 1 ) Ee = 0mW/cm

Emitter-collector Breakdown (BV

Collector-emitter Dark Current (I

On-State Collector Current IC ( ON ) 1 mA 5V V

) 30 V IC = 1mA

CEO

) 5 V IE = 100µA

ECO

) 100 nA VCE = 10V

CEO

Ee = 0mW/cm

Ee = 0mW/cm

CE

Ee = 1mW/cm

Collector-emitter Saturation Voltage V

CE(SAT)

0.4 V IC = 0.5mA
Ee = 0.5mW/cm

Rise Time tr 10 40 µs VCC= 20V, IC= 1mA,
Fall Time tf 8 35 µs RL = 1kΩ

Peak Sensitivity Wavelength 940 nm IF = 40mA
Beam Acceptance Angle ±20 deg.

Note 1 Special Selections are available on request. Please consult the factory.

2

2

2

2

2

DB92102-AAS/A2