ISOCOM IS4N46, IS4N45 Datasheet

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

11/12/00

DB91024m-AAS/A2

APPROVALS

l UL recognised, File No. E91231

DESCRIPTION

The IS4N45, IS4N46 are optically coupled
isolators consisting of an infrared light emitting
diode and a NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a standard 6pin dual in line
plastic package. These devices are designed to
equal the 4N45, 4N46 characteristics while
providing greater voltage and current capability.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

RMS

,7.5kV

PK

)

l High Current Transfer Ratio ( 1500% typ.)

l High BV

CEO

( 55V min.)

l Internal base-emitter resistor minimizes

output leakage

l Low input current 0.5mA I

F

APPLICATIONS

l Telephone ring detector

l Digital logic ground isolation

l Low input current line receiver

l Logic to reed relay interface

l Level shifting

l Interface between logic families

l Line voltage status indicator - low input

power dissipation

IS4N46
IS4N45

LOW INPUT CURRENT

DARLINGTON OUTPUT OPTICALLY

COUPLED ISOLATOR

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 60mA
Reverse Voltage 6V
Peak Forward Current 3A
(1µs pulse, 300pps)
Power Dissipation 100mW

OUTPUT TRANSISTOR

Output Voltage ( pin 5 - 4 ) V

O

55V
Emitter-baseVoltage (pin 4 - 6) 7V
Power Dissipation 200mW

POWER DISSIPATION

Total Power Dissipation 260mW

Dimensions in mm

1

3 4

6

2 5

0.5

0.26

0.5

7.0

6.0

1.2

7.62

3.0

13°
Max

3.35

4.0

3.0

2.54

7.62

6.62

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

OPTION G

7.62

SURFACE MOUNT

OPTION SM

10.16

0.26

10.46

9.86

0.6

0.1

1.25

0.75

DB91024m-AAS/A1

11/12/00

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA

Reverse Voltage (VR) 6 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V

Output Output Breakdown Voltage ( pin 5 - 4) 55 V I54 = 1mA

Base Breakdown ( pin 4 - 6 ) 7 V IE = 0.1mA
Logic High Output 100 µA V54 = 18V

Coupled DC Current Transfer Ratio ( CTR )

IS4N46 350 % 0.5mA IF , 1V V

CE

IS4N46 500 % 1mA IF , 1V V

CE

IS4N45 250 % 1mA IF , 1V V

CE

IS4N46, IS4N45 200 % 10mA IF , 1.2V V

CE

Logic Low Output Voltage ( VOL )

IS4N46 1.0 V 0.5mA IF , 1.75mA I

OL

IS4N46 1.0 V 1mA IF , 5mA I

OL

IS4N45 1.0 V 1mA IF , 2.5mA I

OL

IS4N46, IS4N45 1.2 V 10mA IF , 20mA I

OL

Input to Output Isolation Voltage V

ISO

5300 V

RMS

See note 1

7500 V

PK

See note 1

Input-output Isolation Resistance R

ISO

10

11

Ω V

IO

= 500V (note 1)

Input-output Capacitance Cf 0.5 pF V = 0, f =1MHz

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

Output

V

CC

Input

FIGURE 1

R

L

SWITCHING SPECIFICATIONS AT TA = 25°C ( VCC = 5V Unless otherwise noted )

PARAMETER SYM DEVICE MIN TYP MAX UNITS TEST CONDITION

Propagation Delay Time t

PHL

IS4N46,45 80 µs IF = 1mA, RL = 10kΩ

to Logic Low at Output ( fig.1) t

PHL

IS4N46,45 5 50 µs IF = 10mA, RL = 220Ω

Propagation Delay Time t

PLH

IS4N46,45 1500 µs IF = 1mA, RL = 10kΩ

to Logic High at Output( fig.1) t

PLH

IS4N46,45 150 500 µs IF = 10mA, RL = 220Ω

Common Mode Transient
Immunity at Logic High CM

H

500 V/µs IF = 0mA,V

CM

= 10V

PP

Level Output RL = 10kΩ
Common Mode Transient

Immunity at Logic Low CM

L

500 V/µs IF= 1mA,VCM= 10V

PP

Level Output RL = 10kΩ

t

PHL

t

PLH

I

F

0

V

O

V

O

2.5V

2.5V
V

OL

5V