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IS354
HIGH DENSITY MOUNTING
AC INPUT, PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
DESCRIPTION
The IS354 is an optically coupled isolator
consisting of two infrared light emitting diodes
connected in inverse parallel and NPN silicon
photo transistor in a space efficient dual in line
plastic package.
FEATURES
l Marked as FPA1.
l Current Transfer Ratio MIN. 20%
l Isolation Voltage (3.75kV
l All electrical parameters 100% tested
l Drop in replacement for Sharp PC354
RMS
,5.3kV
)
PK
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
Dimensions in mm
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92856l-AAS/A3
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ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -40°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current ±50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Emitter-collector Voltage BV
Power Dissipation 150mW
CEO
ECO
35V
6V
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.26mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = ±20mA
Reverse Voltage (VR) 5 V IR = 10µA
Reverse Current (IR) 10 µA VR = 4V
Output Collector-emitter Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 35 V IC = 0.1mA
CEO
) 6 V IE = 10uA
ECO
) 100 nA VCE = 20V
CEO
Coupled Current Transfer Ratio (CTR) 20 400 % ±1mA IF , 5V V
CE
Collector-emitter Saturation VoltageVCE
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
(SAT)
3750 V
ISO
5300 V
10
5x10
ISO
0.2 V ±20mA IF , 1mA I
RMS
PK
Ω V
Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC = 2mA, RL = 100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
C
See note 1
See note 1
= 500V (note 1)
IO
DB92856l-AAS/A3