ISOCM H11G2, H11G1, H11G3 Datasheet

7/12/00

H11G1X, H11G2X, H11G3X
H11G1, H11G2, H11G3

HIGH VOLTAGE DARLINGTON

OUTPUT OPTICALLY COUPLED

ISOLATOR

APPROVALS

l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

ll VDE 0884 in 2 available lead forms : -

- STD

- G form

DESCRIPTION

The H11G_ series are optically coupled isolators
consisting of an infrared light emitting diode and
a high voltage NPN silicon photo darlington
which has an integral base-emitter resistor to
optimise switching speed and elevated
temperature characteristics in a standard 6pin
dual in line plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

l High Current Transfer Ratio ( 1000% min)

l High BV

l Low collector dark current :-

100nA max. at 80V V

l Low input current 1mA I

(H11G1 - 100V min.)

CEO

CE

,7.5kV

RMS

F

PK

APPLICATIONS

l Modems

l Copiers, facsimiles

l Numerical control machines

l Signal transmission between systems of

different potentials and impedances

OPTION SM

SURFACE MOUNT

OPTION G

7.62

Dimensions in
mm

1

2 5

3 4

7.62

1.2

7.62

6.62

2.54

7.0

6.0

4.0

3.0

0.5

3.0

0.5

3.35

0.26

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

)

INPUT DIODE

Forward Current 60mA
Peak Forward Current 3A
(1µs pulse, 300pps)
Reverse Voltage 3V
Power Dissipation 100mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
H11G3, H11G2, H11G1 55, 80, 100V
Collector-base Voltage BV
H11G3, H11G2, H11G1 55, 80, 100V
Emitter-baseVoltage BV
Power Dissipation 200mW

ECO

CEO

CBO

6V

6

13°
Max

0.6

0.1

10.46

9.86

1.25

0.75

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, TS25 1YD England Tel: [phone]

Fax : [phone] e-mail [e-mail]

http://www.isocom.com

POWER DISSIPATION

Total Power Dissipation 260mW

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB92008m-AAS/a1

7/12/00

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA

Reverse Voltage (VR) 3 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V

Output Collector-emitter Breakdown (BV

H11G1 100 V IC = 1mA
H11G2 80 V IC = 1mA
H11G3 55 V IC = 1mA

Collector-base Breakdown (BV

H11G1 100 V IC = 100µA

CBO

H11G2 80 V IC = 100µA

H11G3 55 V IC = 100µA
Emitter-base Breakdown (BV
Collector-emitter Dark Current (I

EBO

H11G1 100 nA VCE = 80V

H11G2 100 nA VCE = 60V

H11G3 100 nA VCE = 30V

Coupled Collector Output Current ( IC )

H11G1, H11G2 100 mA 10mA IF , 1.2V V

H11G1, H11G2 5 mA 1mA IF , 5V V

H11G3 2 mA 1mA IF , 5V V
Collector-emitter Saturation Voltage V

H11G1, H11G2 1.0 V 1mA IF , 1mA I

H11G1, H11G2 1.2 V 16mA IF , 50mA I

H11G3 1.2 V 20mA IF , 50mA I
Input to Output Isolation Voltage V

Input-output Isolation Resistance R
Input-output Capacitance Cf 0.5 pF V = 0, f =1MHz
Turn-on Time ton 5 µs IF= 10mA, VCC = 5V,
Turn-off Time toff 100 µs RL = 100Ω, f = 30Hz,

)

CEO

)

) 6 V IE = 0.1mA

)

CEO

CE(SAT)

5300 V

ISO

7500 V

11

10

ISO

RMS
PK

Ω V

See note 1
See note 1

= 500V (note 1)

IO

pulse width equal to
or less than 300µs

CE
CE
CE

C

C
C

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

FIGURE 1

V

CC

IF = 10mA

Input

100Ω

Output

Input

Output

t

on

t

r

10%

90%

t

off

t

f

10%

90%

DB92008m-AAS/a1