ISOCM H11F3, H11F2, H11F1 Datasheet

7/12/00

H11F1, H11F2, H11F3

PHOTON COUPLED BILATERAL

ANALOG FET

APPROVALS

l UL recognised, File No. E91231

DESCRIPTION

The H11F_ series are optically coupled isolators
consisting of infrared light emitting diode and a
symmetrical bilateral silicon photodetector. The
detector is electrically isolated from the input and
performs like an ideal isolated FET designed for
distortion-free control of low level ac and dc
analog signals.The H11F_ series are mounted in a
standard 6pin dual in line plastic package.

FEATURES

ll Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

As a remote variable resistor

l ≤100Ω to ≥300MΩ

l ≥ 99.9% Linearity

l ≤15 pF Shunt Capacitance

l ≥100GΩ I/O Isolation Resistance

As an Analog Signal Switch

l Extremely low Offset Voltage

l 60V pk-pk Signal Capability

l No Charge Injection or Latchup

l ton, toff ≤15µs

APPLICATIONS

As a remote variable resistor

l Isolated variable attenuator

l Automatic gain control

l Active filter fine tuning / band switching

OPTION SM

SURFACE MOUNT

OPTION G

8.3 max

2.54

7.0

6.0

8.9

Dimensions in mm

1

2 5

3 4

6

max.

8.3 max.

5.1

0.48

max.

3.9

3.1

0.25

15°
Max

0.5
min.

APPLICATIONS (cont.)
As an Analog Signal Switch

l Isolated sample and hold circuit
l Multiplexed, optically isolated A/D conversion

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 100mW

OUTPUT TRANSISTOR

Breakdown Voltage
H11F1, H11F2 ±30V
H11F3 ±15V
Detector Current (continuous) ±100mA
Power Dissipation 300mW

1.2

0.6

10.2

9.5

1.4

0.9

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

POWER DISSIPATION

Total Power Dissipation 350mW

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB91018AAS/A3

7/12/00

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.1 1.75 V IF = 16mA

Reverse Voltage (VR) 5 V IR = 10µA
Reverse Current (IR) 10 µA VR = 5V

Output Breakdown Voltage - V(

(either H11F1, H11F2 30 V I46 = 10µA,IF = 0

BR )46

(Note 2)

polarity) H11F3 15 V I46 = 10µA,IF = 0

Off-state Dark Current - I

Off-state Resistance - r
Capacitance - C

46

Coupled On-state Resistance - r

H11F1 200 Ω
H11F2 330 Ω IF = 16mA, I

46

46

(Note 2)

46

300 ΜΩ V

50 nA V
50 µA V

15 pF V

= 15V, IF = 0,

46

TA= 25°C

= 15V, IF = 0,

46

TA = 100°C

= 15V, IF = 0

46

= 0, IF = 0,

46

f = 1 MHz

= 100µA

46

H11F3 470 Ω

On-state Resistance - r

(Note 2)

64

H11F1 200 Ω
H11F2 330 Ω IF = 16mA, I

= 100µA

64

H11F3 470 Ω

Input to Output Isolation Voltage V
Input-output Isolation Resistance R

Input-output Capacitance Cf 2 pF VIO= 0, f =1MHz

5300 V

ISO

7500 V

11

10

ISO

RMS
PK

Ω V

See note 1
See note 1

= 500V (note 1)

IO

Turn-on Time ton 25 µs IF= 16mA, V46 = 5V,
Turn-off Time toff 25 µs RL = 50Ω
Resistance, non-linearity and asymmetry 0.1 % IF= 16mA, f = 1kHz

I46= 25µA RMS

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

DB91018-AAS/A3