ISOCM H11D4, H11D3, H11D2, H11D1 Datasheet

7/12/00

DB91077m-AAS/A1

'X' SPECIFICATION APPROVALS

ll VDE 0884 in 3 available lead forms : -

- STD

- G form

- SMD approved to CECC 00802

DESCRIPTION

The H11D series of optically coupled isolators
consist of infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

RMS

,7.5kV

PK

)

l High BV

CER

( 300V - H11D1, H11D2 )
( 200V - H11D3, H11D4 )

l All electrical parameters 100% tested

l Custom electrical selections available

APPLICATIONS

l DC motor controllers

l Industrial systems controllers

l Measuring instruments

l Signal transmission between systems of

different potentials and impedances

H11D1X, H11D2X, H11D3X, H11D4X
H11D1, H11D2, H11D3, H11D4

HIGH VOLTAGE OPTICALLY

COUPLED ISOLATOR

PHOTOTRANSISTOR OUTPUT

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 100mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV

CER

(RBE= 1MΩ )
H11D1, H11D2 300V
H11D3, H11D4 200V

Collector-base Voltage BV

CBO

H11D1, H11D2 300V
H11D3, H11D4 200V

Emitter-collector Voltage BV

ECO

6V

Power Dissipation 300mW

POWER DISSIPATION

Total Power Dissipation 260mW
(derate linearly 2.67mW/°C above 25°C)

0.26

0.5

Dimensions in
mm

7.0

6.0

1.2

7.62

3.0

13°
Max

3.35

4.0

3.0

2.54

7.62

6.62

0.5

1

3 4

6

2 5

OPTION G

7.62

SURFACE MOUNT

OPTION SM

10.16

0.26

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, TS25 1YD England Tel: [phone]

Fax : [phone] e-mail [e-mail]

http://www.isocom.com

10.46

9.86

0.6

0.1

1.25

0.75

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA

Reverse Voltage (VR) 6 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V

Output Collector-emitter Breakdown (BV

CER

)
H11D1, H11D2 300 V IC = 1mA, RBE = 1MΩ
H11D3, H11D4 200 V ( note 2 )

Collector-base Breakdown (BV

CBO

)
H11D1, H11D2 300 V IC = 100µA
H11D3, H11D4 200 V

Emitter-collector Breakdown (BV

ECO

) 6 V IE = 100µA

Collector-emitter Dark Current (I

CER

)

H11D1, H11D2 100 nA VCE = 200V,RBE=1MΩ

250 µA VCE= 200V,RBE=1MΩ,

TA=100°C

H11D3, H11D4 100 nA VCE = 100V,RBE=1MΩ

250 µA VCE= 100V,RBE=1MΩ,

TA=100°C

Coupled Current Transfer Ratio (CTR) 20 % 10mA IF , 10V V

CE

,

RBE = 1MΩ

Collector-emitter Saturation VoltageV

CE(SAT)

0.4 V 10mA IF , 0.5mA IC ,
RBE = 1MΩ

Input to Output Isolation Voltage V

ISO

5300 V

RMS

See note 1

7500 V

PK

See note 1

Input-output Isolation Resistance R

ISO

5x10

10

Ω V

IO

= 500V (note 1)

Turn-on Time ton 5 µs VCC = 10V, IC= 2mA,
Turn-off Time toff 5 µs RL = 100Ω , fig 1

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

7/12/00

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

Output

Output

RL = 100Ω

Input

10%

90%

90%

10%

t

on

t

r

FIG 1

V

CC

t

off

t

f

DB91077m-AAS/A1