ISOCM H11C3, H11C2, H11C1, H11C6, H11C5 Datasheet

H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X
H11C1, H11C2, H11C3, H11C4, H11C5, H11C6

PHOTON COUPLED ISOLATOR Ga As

INFRARED EMITTING DIODE &

LIGHT ACTIVATED SCR

APPROVALS

l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

ll VDE 0884 in 2 available lead forms : -

- STD

- G form

DESCRIPTION

The H11C_ series are optically coupled isolators
consisting of infrared light emitting diode and a
light activated silicon controlled rectifier in a
standard 6pin dual in line plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

l High Surge Anode Current (5.0 A)

l High Blocking Voltage (200V*

l Low Turn on Current (5mA typical)

l All electrical parameters 100% tested

l Custom electrical selections available

,7.5kV

RMS

1

, 400V*1)

PK

Dimensions in mm

1
2 5

3

8.3 max.

0.25

0.5
min.

2.54

7.0

6.0

7.62
max.

5.1
max.

3.9

3.1

0.48

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

)

INPUT DIODE

Forward Current 60mA
Forward Current (Peak)
(1µs pulse, 300 pps) 3A
Reverse Voltage 6V
Power Dissipation 100mW

6

4

15°
Max

APPLICATIONS

l 10A, T

l 25W Logic Indicator Lamp Driver

l 400V Symmetrical transistor coupler

OPTION SM

SURFACE MOUNT

2

L compatible, Solid State Relay

OPTION G

1.2

0.6

10.2

9.5

1.4

0.9

8.3 max

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

5/12/00

0.26

DETECTOR

Peak Forward Voltage
H11C1, H11C2, H11C3 200V*
H11C4, H11C5, H11C6 400V*

1
1

Peak Reverse Gate Voltage 6V
RMS On-state Current 300mA
Peak On-state Current
(100µs, 1% duty cycle) 10A
Surge Current (10ms) 5A
Power Dissipation 300mW

*1 IMPORTANT : A resistor must be connected
between gate and cathode (pins 4 & 6) to prevent false
firing (R

< 56kΩ)

GK

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB92010-AAS/A4

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA

Reverse Voltage (VR) 3 V IR = 10µA

Output Peak Off-state Voltage (V
(note 2) H11C1, H11C2, H11C3 200 V RGK=10kΩ, ID= 50µA,

DM

)

TA= 100°C

H11C4, H11C5, H11C6 400 V RGK=10kΩ,ID=150µA,

TA=100°C
Peak Reverse Voltage (V
H11C1, H11C2, H11C3 200 V RGK=10kΩ, ID= 50µA,

RM

)

TA=100°C
H11C4, H11C5, H11C6 400 V RGK=10kΩ,ID=150µA,

TA=100°C

On-state Voltage (V

Off-state Current (I
H11C1, H11C2, H11C3 50 µA RGK=10kΩ, IF= 0,

) 1.1 1.3 V ITM = 300mA

TM

)

DM

VDM=200V, TA=100°C
H11C4, H11C5, H11C6 150 µA RGK=10kΩ, IF= 0,

VDM=400V, TA=100°C
Reverse Current (IR )
H11C1, H11C2, H11C3 50 µA RGK=10kΩ, IF= 0,

VDM=200V, TA=100°C
H11C4, H11C5, H11C6 150 µA RGK=10kΩ, IF= 0,

VDM=400V, TA=100°C

Coupled Input Current to Trigger ( I

) (note 2)

FT

H11C1, H11C2, H11C4, H11C5 20 mA VAK =50V, RGK=10kΩ
H11C3, H11C6 30 mA VAK =50V, RGK=10kΩ
H11C1, H11C2, H11C4, H11C5 11 mA VAK=100V, RGK=27kΩ
H11C3, H11C6 14 mA VAK=100V, RGK=27kΩ
Coupled dv/dt, Input to Output (dv/dt) 500 V/µs
Input to Output Isolation Voltage V

Input-output Isolation Resistance R
Input-output Capacitance Cf 2 pF V = 0, f =1MHz

5300 V

ISO

7500 V

11

10

ISO

RMS
PK

Ω V

See note 1

See note 1

= 500V (note 1)

IO

5/12/00

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

DB92010-AAS/A4

µ

Input Current to Trigger vs.
Anode to Cathode Voltage

100

FT

40
20

RGK =300Ω

10

1kΩ

4
2

10kΩ

1.0

27kΩ

0.4

56kΩ

0.2

Normalized input current to trigger I

0.1
1 5 10 50 100 200

Anode to cathode voltage VAK ( V )

Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C

Input Current to Trigger vs.

Ambient Temperature

12

FT

RGK =300Ω

10

1kΩ

4

2

10kΩ

1.0

27kΩ

0.4

56kΩ

0.2

Normalized input current to trigger I

0.1

Normalized to VAK = 50V,
RGK =10kΩ, TA = 25 °C

-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature TA ( °C )

Input Current to Trigger Distribution

vs. Ambient Temperature

10

FT

Normalized to
VAK = 50V

4

RGK =10kΩ
TA = 25 °C

90th percentile

2

FT

100

40
20

10

4

1

10th percentile

0.4

2
1

Input Current to Trigger vs.

Pulse Width

RGK =300Ω

1kΩ

27kΩ

10kΩ

56kΩ

Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C

0.4

0.2

Normalized input current to trigger I

0.1

-40 -20 0 20 40 60 80 100
Ambient temperature TA ( °C )

Turn on Time vs. Input Current

24
22

10kΩ

RGK=1kΩ

20
18

s)
(

16

on

VAK = 50V
ton = td + t
tr = 1µs

r

14
12

10

8

Turn on time t

56kΩ

6
4

2

0

0 10 20 30 40 50 60 70 80 90 100

Input current IF (mA)

5/12/00

0.2

Normalized input current to trigger I

0.1
1 2 4 6 10 20 40 60 100 200 400 1000

Pulse width ( µs )

Input Characteristics IF vs. V

100

40

20
10

(mA)

F

4

100°C

25°C

-55°C

2
1

0.4

Forward current I

0.2

0.1
0 0.5 1 1.5 2 2.5 3

Forward voltage VF ( V )

F

DB92010-AAS/A4

µ

Holding Current vs. Ambient

µ

Temperature

10000

Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C

A)
(

H

4000
2000

1000

RGK =300Ω

1kΩ

400
200
100

Holding current I

40

10kΩ
27kΩ

56kΩ

20
10

-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature TA ( °C )

Maximum Transient Thermal Impedence

1000

1. Lead temperature measured at the
widest portion of the SCR anode lead.

400

2. Ambient temperature measured at
a point 1/2" from the device.

200

100

Junction to ambient

40
20

10

4
2

Transient thermal impedance ( °C / Watt )

1

0.001 0.01 0.1 1 2 4 10 100
Time (seconds)

Junction to lead

Off State Forward Current vs.

Ambient Temperature

10000

)

D

4000

2000

Normalized to
VAK = 50V
TA = 25 °C

1000

400
200

100

40
20

VAK = 400V

VAK = 50V

VAK = 200V

10

4
2
1

Normalized forward current off state ( I

0 25 50 75 100

Ambient temperature TA ( °C )

100

90
80

70
60

50
40
30
20

10

Maximum allowable temperature ( °C )

0

On State Current vs. Maximum

Allowable Temperature

1. Ambient temp. half-sine wave avg

2. Ambient temp. DC current

3. Anode lead temp. half-sine wave avg

4. Anode lead temp. DC current

1. 2. 4.3.

0 0.2 0.4 0.6 0.8 1.0

On state current ( Α )

s)

dV/dt vs. Ambient temperature

400

1000

RGK =300Ω

2
1

On State Characteristics

100

0.2

40

10

1kΩ

10kΩ

4

1

27kΩ

(A)

T

0.1

0.04

0.02

0.01

On state current I

0.4

56kΩ

0.1
25 50 75 100

Critical rate of rise applied forward voltage dV/dt (V/

5/12/00

Ambient temperature TA ( °C )

100°C

Junction temperature =

25°C

Junction temperature =

Increases to forward
breakover voltage

0 1 2 3 4

On state voltage VT ( V )

DB92010-AAS/A4

0.4