ISOCM H11B2, H11B1, H11B3 Datasheet

7/12/00
H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3
PHOTODARLINGTON OUTPUT
APPROVALS
l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l VDE 0884 in 2 available lead form :
- - STD
- G form VDE 0884 in SMD approval pending
l SETI approved, reg. no.151786-18
DESCRIPTION
The H11B_ series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package.
FEATURES
l Options :-
10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no.
l High Current Transfer Ratio
l High Isolation Voltage (5.3kV
l All electrical parameters 100% tested
l Custom electrical selections available
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
1.2
0.6
10.2
9.5
1.4
0.9
RMS
OPTION G
0.26
10.16
,7.5kV
5.08 max.
Dimensions in mm
1
2
3
7.8
7.4
1.54
8.8
8.4
2.54
6.4
6.2
4.3
4.1
0.5
0.5
0.3
3.3
9.6
8.4
ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
)
PK
Forward Current 80mA Reverse Voltage 5V Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV Collector-base Voltage BV Emitter-collector Voltage BV Power Dissipation 150mW
CEO
CBO
ECO
POWER DISSIPATION
Total Power Dissipation 250mW (derate linearly 3.3mW/°C above 25°C)
6
5
4
30V 50V 5V
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92167-AAS/A2
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
7/12/00
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA
Reverse Voltage (VR) 3 V IR = 10µA Reverse Current (IR) 10 µA VR = 3V
Output Collector-emitter Breakdown (BV
Collector-base Breakdown (BV Emitter-collector Breakdown (BV
H
FE
Collector-emitter Dark Current (I
) 30 V IC = 1mA (note 2)
CEO
) 30 V IC = 100µA
CBO
) 5 V IE = 100µA
ECO
16K VCE = 5V, IC = 5mA
) 100 nA VCE = 10V
CEO
Coupled Current Transfer Ratio ( CTR )(Note 2)
H11B1 500 % 1mA IF , 5V V H11B2 200 % 1mA IF , 5V V H11B3 100 % 1mA IF , 5V V
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
5300 V
ISO
7500 V
10
5x10
ISO
1.0 V 1mA IF , 1mA I
RMS PK
V
Output Turn on Time ton 125 µs VCC= 10V, IC = 10mA, Output Turn off Time toff 100 µs RL = 100 , fig.1
Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory.
(note 1) (note 1)
= 500V (note 1)
IO
CE CE CE
C
Input
VCC = 10V
100
FIGURE 1
IC = 10mA
Output
Input
Output
10%
90%
t
on
t
r
t
off
t
f
10%
90%
DB92167-AAS/A2
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