ISOCM H11AA4, H11AA3, H11AA2, H11AA1 Datasheet

7/12/00

H11AA1, H11AA2, H11AA3, H11AA4
H11AA1X, H11AA2X, H11AA3X, H11AA4X

A.C. INPUT PHOTOTRANSISTOR

OPTICALLY COUPLED

ISOLATORS

APPROVALS

ll UL recognised, File No. E91231
ll CSA recognised, Cert. No. CA 110306-1

'X' SPECIFICATION APPROVALS

l VDE 0884 in 3 available lead form : -

- STD

- G form

- SMD approved to CECC 00802

DESCRIPTION

The H11AA series of optically coupled
isolators consist of two infrared light emitting
diodes connected in inverse parallel and NPN
silicon photo transistor in a standard 6 pin dual
in line plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

l AC or polarity insensitive input

l All electrical parameters 100% tested

l Custom electrical selections available

RMS

,7.5kV

PK

2.54

7.0

6.0

Dimensions in mm

1
2 5

3 4

1.2

7.62

6.62

4.0

7.62

3.0

0.5

3.0

0.5

3.35

0.26

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

)

Forward Current ±100mA
Peak Forward Current ±1A
Power Dissipation 200mW

6

13°
Max

APPLICATIONS

l Computer terminals

l Industrial systems controllers

l Telephone sets, Telephone exchangers

l Signal transmission between systems of

different potentials and impedances

OPTION SM

SURFACE MOUNT

0.6

0.1

10.46

9.86

1.25

0.75

OPTION G

7.62

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, TS25 1YD England Tel: [phone]

Fax : [phone] e-mail [e-mail]

http://www.isocom.com

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-collector Voltage BV
Emitter-base Voltage BV
Power Dissipation 300mW

CEO

CBO

ECO

EBO

30V
70V
7V
5V

POWER DISSIPATION

Total Power Dissipation 350mW
(derate linearly 4.67mW/°C above 25°C)

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB92296m-AAS/A1

7/12/00

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.5 V IF = ±10mA

Output Collector-emitter Breakdown (BV

( note 2 )

Collector-base Breakdown (BV
Emitter-base Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I

) 30 V IC = 1mA

CEO

) 70 V IC = 100µA

CBO

) 5 V IE = 100µA

EBO

) 7 V IE = 100µA

ECO

) 50 nA VCE = 10V

CEO

Coupled Current Transfer Ratio (CTR) (note 2 )

H11AA4 100 % ±10mAIF , 10V V
H11AA3 50 % ±10mAIF , 10V V
H11AA1 20 % ±10mAIF , 10V V
H11AA2 10 % ±10mAIF , 10V V

Collector-emitter Saturation VoltageV

CE(SAT)

Current Transfer Ratio Symmetry 0.33 3.0 ±10mAIF , 10V V

Input to Output Isolation Voltage V

Input-output Isolation Resistance R

ISO

ISO

5300 V
7500 V

10

5x10

0.4 V ±10mAIF , 0.5mAI

RMS
PK

Ω V

See note 1
See note 1

= 500V (note 1)

IO

CE
CE
CE

CE

C

CE

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

DB92296m-AAS/A1