ISOCM CQY80X, CQY80NX, CQY80N, CQY80 Datasheet

7/12/00

CQY80X, CQY80NX
CQY80, CQY80N

OPTICALLY COUPLED

ISOLATOR

PHOTOTRANSISTOR OUTPUT

APPROVALS

l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

ll CQY80X is VDE 0884 in 3 available

lead forms : -

- STD

- G form

- SMD approved to CECC 00802

CQY80NX - VDE 0884 pending

ll CQY80X is certified to EN60950 by the

following Test Bodies :­Nemko - Certificate No. P96101299

Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
CQY80NX - EN60950 pending

DESCRIPTION

The CQY80 series of optically coupled
isolators consist of infrared light emitting diode
and NPN silicon photo transistor in a standard
6 pin dual in line plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

l Custom electrical selections available

RMS

,7.5kV

PK

APPLICATIONS

l DC motor controllers

l Industrial systems controllers

l Signal transmission between systems of

different potentials and impedances

OPTION SM

SURFACE MOUNT

OPTION G

7.62

Dimensions in mm

1
2 5

3 4

0.5

1.2

3.0

0.5

7.62

6.62

2.54

7.0

6.0

4.0

3.0

3.35

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW

)

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-collector Voltage BV
Power Dissipation 160mW

CEO

CBO

ECO

POWER DISSIPATION

6

7.62

13°
Max

0.26

32V
70V
6V

0.6

0.1

10.46

9.86

1.25

0.75

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB90035m-AAS/A1

7/12/00

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.60 V IF = 50mA

Reverse Voltage (VR) 6 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V

Output Collector-emitter Breakdown (BV

( Note 2 )
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I

) 32 V IC = 1mA

CEO

) 6 V IE = 100µA

ECO

) 200 nA VCE = 20V

CEO

Coupled IC / IF (CTR) (Note 2) 0.5 10mA IF , 5V V

Current Transfer Ratio (CTR) (Note 2) 50 % 10mA IF , 5V V

Collector-emitter Saturation VoltageV

Input to Output Isolation Voltage V

Input-output Isolation Resistance R

CE(SAT)

5300 V

ISO

7500 V

10

5x10

ISO

0.3 V 10mA I

RMS
PK

Ω V

See note 1
See note 1

= 500V (note 1)

IO

, 1mA I

F

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

CE

CE

C

Type R

= 100Ω see fig 1 R

L

td tr ton ts tf toff I

C

= 1kΩ see fig 2

L

ton toff I

µs µs µs µs µs µs mA µs µs mA

CQY80 4.0 7.0 11.0 0.3 6.7 7.0 5 25.0 42.5 10

CQY80N

VCC = 5V

Output

50Ω

RL = 100Ω

Figure 1

VCC = 5V

Output

50Ω

RL = 1kΩ

Figure 2

F

DB90035m-AAS/A1