ISOCM CNY35 Datasheet

7/12/00

CNY35X
CNY35

A.C. INPUT PHOTOTRANSISTOR

OPTICALLY COUPLED

ISOLATORS

APPROVALS

l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

ll VDE 0884 in 2 available lead forms : -

- STD

- G form

l EN60950 approval pending

DESCRIPTION

The Solid State CNY35 optically coupled
isolator consists of two infrared light emitting
diodes connected in inverse parallel and NPN
silicon photo transistor in a standard 6 pin dual
in line plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

l AC or polarity insensitive input

l All electrical parameters 100% tested

l Custom electrical selections available

RMS

,7.5kV

PK

2.54

Dimensions in mm

7.0

6.0

7.62
max.

8.3 max.

5.1

0.5
min.

max.

3.9

3.1

0.48

0.25

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

)

Forward Current ±100mA
Peak Forward Current ±1A
Power Dissipation 200mW

15°
Max

APPLICATIONS

l Computer terminals

l Industrial systems controllers

l Telephone sets, Telephone exchangers

l Signal transmission between systems of

different potentials and impedances

OPTION SM

SURFACE MOUNT

1.2

0.6

10.2

9.5

1.4

0.9

OPTION G

8.3 max

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-collector Voltage BV
Emitter-base Voltage BV
Power Dissipation 300mW

CEO

CBO

ECO

EBO

30V
70V
7V
5V

POWER DISSIPATION

Total Power Dissipation 350mW
(derate linearly 4.67mW/°C above 25°C)

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB91040-AAS/A2

7/12/00

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.5 V IF = ±10mA

Output Collector-emitter Breakdown (BV

( note 2 )

Collector-base Breakdown (BV
Emitter-base Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I

) 30 V IC = 1mA

CEO

) 70 V IC = 100µA

CBO

) 5 V IE = 100µA

EBO

) 7 V IE = 100µA

ECO

) 50 nA VCE = 10V

CEO

Coupled Current Transfer Ratio (CTR) (note 2 ) 10 % ±10mAIF , 10V V

Collector-emitter Saturation VoltageV

Input to Output Isolation Voltage V

Input-output Isolation Resistance R

CE(SAT)

ISO

ISO

5300 V
7500 V

10

5x10

0.4 V ±10mAIF , 0.5mAI

RMS
PK

Ω V

See note 1
See note 1

= 500V (note 1)

IO

CE

C

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

DB91040-AAS/A2