ISOCM CNX62A Datasheet

7/12/00
CNX62A
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll VDE 0884 approval pending
l EN60950 approval pending
DESCRIPTION
The CNX62A optically coupled isolator consists of an infrared light emitting diode and a NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected.
FEATURES
l Options :-
10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no.
l High Current Transfer Ratio (40% min)
l Low Saturation Voltage suitable for TTL
integrated circuits
l High BV
l High Isolation Voltage (5.3kV
l Base pin unconnected for improved noise
(50V min)
CEO
RMS
,7.5kV
immunity in high EMI environment
PK
Dimensions in mm
1 2 5
3 4
0.5
1.2
3.0
0.5
6.62
2.54
7.0
6.0
4.0
3.0
3.35
ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
)
Reverse Voltage 6V Power Dissipation 105mW
6
7.62
13° Max
0.26
APPLICATIONS
l DC motor controllers
l Industrial systems controllers
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
0.6
0.1
10.46
9.86
1.25
0.75
7.62
0.26
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
OUTPUT TRANSISTOR
Collector-emitter Voltage BV Emitter-collector Voltage BV Power Dissipation 160mW
CEO ECO
50V 6V
POWER DISSIPATION
Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C)
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB90037m-AAS/A1
7/12/00
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA
Reverse Voltage (VR) 6 V IR = 10µA Reverse Current (IR) 10 µA VR = 6V
Output Collector-emitter Breakdown (BV
( Note 2 ) Emitter-collector Breakdown (BV Collector-emitter Dark Current (I
) 50 V IC = 1mA
CEO
) 6 V IE = 100µA
ECO
) 50 nA VCE = 10V
CEO
Coupled Current Transfer Ratio (IC / IF )
(Note 2) 0.4 10mA IF , 0.4V V
1.5 10mA IF , 5V V
Collector-emitter Saturation VoltageVCE
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
Turn-on Time t Turn-off Time t Turn-on Time t Turn-off Time t
on off on off
(SAT)
5300 V
ISO
7500 V
10
5x10
ISO
0.4 V 10mA I
RMS PK
V
3 µs VCC = 5V , IC = 2mA , 3 µs RL = 100 12 µs VCC = 5V , IC = 2mA , 12 µs RL = 1k
Note 1 Measured with input leads shorted together and output leads shorted together. Note 2 Special Selections are available on request. Please consult the factory.
, 4mA I
F
See note 1 See note 1
= 500V (note 1)
IO
CE
CE
C
DB90037m-AAS/A1
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