ISOCM 4N37X, 4N37, 4N36X, 4N36, 4N35X Datasheet

24/11/00

4N35X, 4N36X, 4N37X,
4N35, 4N36, 4N37,

OPTICALLY COUPLED

ISOLATOR

PHOTOTRANSISTOR OUTPUT

APPROVALS

l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

ll VDE 0884 in 3 available lead forms : -

- STD

- G form

- SMD approved to CECC 00802

l EN60950 approval pending

DESCRIPTION

The 4N35, 4N36, 4N37 series of optically
coupled isolators consist of infrared light
emitting diode and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Current Transfer Ratio (100% min.)

l High Isolation Voltage (5.3kV

l All electrical parameters 100% tested

l Custom electrical selections available

RMS

,7.5kV

PK

APPLICATIONS

l DC motor controllers

l Industrial systems controllers

l Measuring instruments

l Signal transmission between systems of

different potentials and impedances

OPTION SM

SURFACE MOUNT

OPTION G

7.62

2.54

7.0

6.0

Dimensions in mm

1
2 5

3 4

1.2

7.62

6.62

4.0

3.0

0.5

3.0

0.5

3.35

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

)

INPUT DIODE

Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-collector Voltage BV
Power Dissipation 160mW

CEO

CBO

ECO

POWER DISSIPATION

6

7.62

13°
Max

0.26

30V
70V
6V

0.6

0.1

10.46

9.86

1.25

0.75

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB90046M-AAS/A1

24/11/00

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA

Reverse Voltage (VR) 6 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V

Output Collector-emitter Breakdown (BV

( Note 2 )
Collector-base Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
Collector-base Dark Current (I

) 30 V IC = 1mA

CEO

) 70 V IC = 100µA

CBO

) 6 V IE = 100µA

ECO

) 50 nA VCE = 10V

CEO

) 20 nA VCE = 10V

CBO

Coupled Current Transfer Ratio (CTR) 100 % 10mA IF , 10V V

Collector-emitter Saturation VoltageV

Input to Output Isolation Voltage V

Input-output Isolation Resistance R

CE(SAT)

5300 V

ISO

7500 V

10

5x10

ISO

0.3 V 10mA I

RMS
PK

Ω V

See note 1
See note 1

= 500V (note 1)

IO

, 0.5mA I

F

Turn-on Time ton 5 10 µs VCC = 10V ,
Turn-off Time toff 5 10 µs IC= 2mA, RL = 100Ω
Output Rise Time tr 3.5 µs ( FIG 1)
Output Fall Time tf 4.9 µs

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

CE

C

RL = 100Ω

V

CC

Input

Output

Output

10%

90%

t

on

t

r

FIG 1

t

off

t

f

10%

90%

DB90046M-AAS/A1