ISOCM 4N32-3, 4N32-2, 4N32-1 Datasheet

4N32X3,-2,-1
4N32-3,-2,-1

LOW INPUT CURRENT

PHOTODARLINGTON OPTICALL Y

COUPLED ISOLAT OR S

APPROVALS

l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

l VDE 0884 in 2 available lead form : -

- STD

- G form

VDE 0884 in SMD approval pending

l EN60950 approved by SETI,

reg. no. 157786-18

DESCRIPTION

The 4N32-3,-2,-1 series of optically coupled
isolators consist of an infrared light emitting
diode and NPN silicon photodarlington in a
space efficient dual in line plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l Low input current 0.25mA I

l High CurrentTransfer Ratio (200% min)

l High Isolation Voltage (5.3kV

l High BV

l All electrical parameters 100% tested

l Custom electrical selections available

(55V min)

CEO

F

RMS

,7.5kV

PK

2.54

6.4

6.2

1.54

8.8

8.4

4.3

Dimensions in mm

1
2

3

7.8

7.4

4.1

0.5

0.5

0.3

3.3

9.6

8.4

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

)

INPUT DIODE

Forward Current 80mA
Reverse Voltage 10V
Power Dissipation 105mW

6
5

4

APPLICATIONS

l Computer terminals

l Industrial systems controllers

l Measuring instruments

l Signal transmission between systems of

different potentials and impedances

OPTION SM

SURFACE MOUNT

1.2

0.6

10.2

9.5

1.4

0.9

OPTION G

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

30/7/97

5.08
max.

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Emitter-collector Voltage BV
Power Dissipation 150mW

CEO
ECO

55V
6V

POWER DISSIPATION

Total Power Dissipation 250mW
(derate linearly 3.3mW/°C above 25°C)

ISOCOM INC

720 E., Park Boulevard, Suite 104,

Plano, TX 75074 USA

Tel: [phone]

Fax: [phone]

DB91023-AAS/A3

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.4 V IF = 20mA

Reverse Voltage (VR)10VI
Reverse Current (IR)10µAV

= 10µA

R

= 10V

R

Output Collector-emitter Breakdown (BV

Collector-base Breakdown (BV
Emitter-collector Breakdown (BV

Collector-emitter Dark Current (I

)55 V IC = 1mA (note 2)

CEO

)55 V I

CBO

) 6 V IE = 100µA

ECO

) 100 nA VCE = 10V

CEO

Coupled Current Transfer Ratio (CTR) (Note 2)

4N32-3 200 % 0.25mA IF , 1.0V V

400 % 0.5mA IF , 1.0V V
800 % 1.0mA IF , 1.0V V

4N32-2 400 % 0.5mA IF , 1.0V V

800 % 1.0mA IF , 1.0V V

4N32-1 800 % 1.0mA IF , 1.0V V

Collector-emitter Saturation Voltage -3 1.0 V 0.25mA IF , 0.5mA I

-2 1.0 V 0.5mA IF , 2mA I

-1 1.0 V 1.0mA IF , 8mA I

Input to Output Isolation Voltage V

Input-output Isolation Resistance R

5300 V

ISO

7500 V

10

5x10

ISO

RMS
PK

Ω V
Output Rise Time tr 60 300 µsV
Output Fall Time tf 53 250 µsI

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

= 100µA

C

(note 1)
(note 1)

= 500V (note 1)

IO

= 2V ,

CE

= 10mA, RL= 100Ω

C

CE

CE

.

CE

CE

.

CE

.

CE

C

C
C

30/7/97

DB91023-AAS/A3