ISOCM 4N33, 4N32, 4N31, 4N30, 4N29 Datasheet

7/12/00

4N29X, 4N30X, 4N31X, 4N32X, 4N33X
4N29, 4N30, 4N31, 4N32, 4N33

OPTICALLY COUPLED ISOLATOR

PHOTODARLINGTON OUTPUT

'X' SPECIFICATION APPROVALS

l VDE 0884 in 3 available lead form : -

- STD

- G form

- SMD approved to CECC 0080

DESCRIPTION

The 4N29, 4N30, 4N31, 4N32, 4N33 series of
optically coupled isolators consist of an infrared
light emitting diode and NPN silicon
photodarlington in a space efficient dual in line
plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Current Transfer Ratio

l High Isolation Voltage (5.3kV

l All electrical parameters 100% tested

l Custom electrical selections available

RMS

,7.5kV

PK

APPLICATIONS

l Computer terminals

l Industrial systems controllers

l Measuring instruments

l Signal transmission between systems of

different potentials and impedances

OPTION SM

SURFACE MOUNT

OPTION G

7.62

Dimensions in mm

1

2

3

7.62

0.5

0.26

1.2

3.0

0.5

7.62

6.62

2.54

7.0

6.0

4.0

3.0

3.35

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

)

INPUT DIODE

Forward Current 80mA
Reverse Voltage 5V
Power Dissipation 105mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-collector Voltage BV
Power Dissipation 150mW

CEO

CBO

ECO

POWER DISSIPATION

6

5

4

13°
Max

30V
50V
5V

0.6

0.1

10.46

9.86

1.25

0.75

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, TS25 1YD England Tel: [phone]

Fax : [phone] e-mail [e-mail]

http://www.isocom.com

Total Power Dissipation 250mW
(derate linearly 3.3mW/°C above 25°C)

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB90048m-AAS/A1

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

7/12/00

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.5 V IF = 50mA

Reverse Voltage (VR) 3 V IR = 10µA
Reverse Current (IR) 10 µA VR = 3V

Output Collector-emitter Breakdown (BV

Collector-base Breakdown (BV
Emitter-collector Breakdown (BV

Collector-emitter Dark Current (I

) 30 V IC = 1mA (note 2)

CEO

) 50 V IC = 100µA

CBO

) 5 V IE = 100µA

ECO

) 100 nA VCE = 10V

CEO

Coupled Collector Output Current ( IC ) (Note 2)

4N32, 4N33 50 mA 10mA IF , 10V V
4N29, 4N30 10 mA 10mA IF , 10V V
4N31 5 mA 10mA IF , 10V V

Collector-emitter Saturation VoltageV

CE(SAT)

4N29,4N30,4N32,4N33 1.0 V 8mA IF , 2mA I
4N31 1.2 V 8mA IF , 2mA I

Input to Output Isolation Voltage V

Input-output Isolation Resistance R

5300 V

ISO

7500 V

10

5x10

ISO

RMS

PK

Ω V

Output Turn on Time ton 5 µs VCC = 10V, IC= 50mA,
Output Turn off Time IF = 200mA ,

4N32, 4N33 toff 100 µs Pulse Width = 1ms
4N29, 4N30, 4N31 40 µs fig.1

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

(note 1)
(note 1)

= 500V (note 1)

IO

CE
CE
CE

C
C

IF = 200mA,
Pulse width = 1ms

Input

VCC = 10V

IC = 50mA

FIGURE 1

Output

Input

Output

10%

90%

t

on

t

r

t

off

t

f

10%

90%

DB90048m-AAS/A1