Isahaya 2SC5815 Schematic [ru]

〈SMALL-SIGNAL TRANSISTOR〉

2SC5815

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

DESCRIPTION

2SC5815 is a super mini package silicon NPN epitaxial

type transistor.

It is designed for low frequency voltage application.

FEATURE

● Low collector to emitter saturation voltage.

VCE(sat)=0.3V max(@I

● Facilitates miniaturization and high-density mounting.

● Excellent linearity of DC forward current gain.

=30mA, IB=1.5mA)

C

APPLICATION

For hybrid IC, small type machine low frequency voltage

amplify application.

AXIMUM RATINGS（Ta=25℃）

Symbol Parameter Ratings Unit

V

Collector to Base voltage 60 V

CBO

V

Emitter to Base voltage 6 V

EBO

V

Collector to Emitter voltage 60 V

CEO

I O Collector current 125 mA

Pc Collector dissipation 150 mW

Tj Junction temperature ＋150 ℃

T

Storage temperature -55～＋150 ℃

stg

OUTLINE DRAWING Unit：ｍｍ

2.0

①

0.65 0.65

1.3

②

1.25 0.425

2.1

0.425

0.3

③

0.9

0.7

0.15

TERMINAL CONNECTER

MARKING

TYPE NAME ｈＦＥ ITEM

0～0.1

JEITA：SC-70

-

①：BASE
②：EMITTER
③：COLLECTOR

Ｅ Ｒ

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Parameter Symbol Test conditions

C to E breakdown voltage V(BR)CEO I C=1uA ,R BE=∞ 60 - - V

Collector cut off current ICBO V CB=60V, I E=0mA - - 0.5 μA

Emitter cut off current IEBO V EB=4V, I C=0mA - - 0.5 μA

DC forward current gain hFE V CE=6V, I C=1mA ※ 120 - 560 -

DC forward current gain hFE V CE=6V, I C=0.1mA 70 - - -

C to E Saturation voltage VCE(sat) I C=30mA ,IB=1.5mA - - 0.3 V

Gain bandwidth product fT V CE=6V, I E=-10mA - 200 - MHz

Collector output capacitance Cob V CB=6V, I E=0mA,f=1MHz - 1.5 - pF

※ It shows ｈＦＥ classification in below table.

Item Q R S

ｈＦＥ 120～270 180～390 180～390

Marking EQ ER ES

Item E F

ｈＦＥ 150～300 250～500

Marking EE EF

Limits

Min Typ Max

ISAHAYA ELECTRONICS CORPORATION

Unit

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

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Jul.2014