Tolerant to negative transient voltage, dV/dt immune
•
Gate drive supply range from 10 V to 20 V
•
Undervoltage lockout for both channels
•
3.3 V and 5 V input logic compatible
•
Matched propagation delay for both channels
•
Logic and power ground +/- 5 V offset
•
Lower di/dt gate driver for better noise immunity
•
Output source/sink current capability 1.4 A/1.8 A
•
RoHS compliant
•
Description
The IRS2184/IRS21844 are high voltage, high speed power MOSFET and
IGBT drivers with dependent high-side
and low-side referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with standard CMOS or LSTTL output, down to 3.3
V logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Feature Comparison
Part
2181COM
21814
2183Internal 400COM
21834
2184Internal 400COM
21844
Packages
8-Lead PDIP
IRS2184
8-Lead SOIC
IRS2184S
Input
logic
HIN/LINnonone
HIN/LINyes
IN/SDyes
Crossconduction
prevention
logic
Deadtime
(ns)
Program 400-5000VSS/COM
Program 400-5000VSS/COM
14-Lead PDIP
IRS21844
Ground Pins
VSS/COM
14-Lead SOIC
IRS21844S
ton/t
off
(ns)
180/220
180/220
680/270
Typical Connection
V
CC
V
IN
SD
(Refer to Lead Assignments for correct
configuration).These diagrams show
electrical connections only. Please refer
to our Application Notes and DesignTips
for proper circuit board layout.
IN
SD
V
CC
HO
B
V
S
LOCOM
IRS2184
V
CC
IN
SD
V
SS
up to 600 V
R
DT
TO
LOAD
up to 600 V
HO
V
V
CC
B
V
IN
SD
DT
V
S
COM
SS
LO
IRS21844
TO
LOAD
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IRS2184/IRS21844(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.
SymbolDefinitionMin.Max.Units
V
B
V
S
V
HO
V
CC
V
LO
DT Programmable deadtime pin voltage (IRS21844 only) VSS - 0.3 V
V
IN
V
SS
dVS/dt Allowable offset supply voltage transient — 50 V/ns
P
D
RthJ
T
J
T
S
T
L
Note 1: All supplies are fully tested at 25 V and an internal 20 V clamp exists for each supply.
Recommended Operating Conditions
The input/output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset rating are tested with all supplies biased at a 15 V differential.
SymbolDefinitionMin.Max.Units
VB High-side floating supply absolute voltage VS + 10VS + 20
V
S
V
HO
V
CC
V
LO
V
IN
DT Programmable deadtime pin voltage (IRS21844 only) V
V
SS
T
A
Note 2: Logic operational for VS of -5 V to +600 V. Logic state held for VS of -5 V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
High-side floating absolute voltage -0.3 620 (Note 1)
High-side floating supply offset voltage VB - 20 VB + 0.3
High-side floating output voltage VS - 0.3 VB + 0.3
Low-side and logic fixed supply voltage -0.3 20 (Note 1)
Low-side output voltage -0.3 VCC + 0.3
Logic input voltage (IN & SD) VSS - 0.3 V
Logic ground (IRS21844 only)V
- 20V
CC
(8-lead PDIP)—1.0
Package power dissipation @ TA ≤ +25 °C
(14-lead PDIP)—1.6
(8-lead SOIC)—0.625
(14-lead SOIC)—1.0
(8-lead PDIP)—125
Thermal resistance, junction to ambient
A
(8-lead SOIC)—200
(14-lead PDIP)—75
(14-lead SOIC)—120
Junction temperature—150
Storage temperature-50150
Lead temperature (soldering, 10 seconds)—300
High-side floating supply offset voltage Note 2 600
High-side floating output voltage V
S VB
Low-side and logic fixed supply voltage 10 20
Low-side output voltage 0 V
Logic input voltage (IN & SD)V
SymbolDefinition Min. Typ.Max. Units Test Conditions
t
on
t
off
t
sdShut-down propagation delay
MTonDelay matching, HS & LS turn-on—090
MToffDelay matching, HS & LS turn-off—04 0
t
t
DT
MDTDeadtime matching = DT
Static Electrical Characteristics
V
BIAS
parameters are referenced to V
Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
SymbolDefinitionMin. T yp. Max. Units T est Conditions
V
V
V
SD,TH+SD input positive going threshold2.5
V
SD,TH-SD input negative going threshold
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+
V
BSUV+
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
O+
I
O-
Turn-on propagation delay—680900VS = 0 V
Turn-off propagation delay—270400VS = 0 V or 600 V
—180270
ns
Turn-on rise time—4060
r
Turn-off fall time—2035
f
Deadtime: LO turn-off to HO turn-on(DT
HO turn-off to LO turn-on (DT
- DT
LO - HO
HO-LO
LO-HO) &
280400520RDT= 0 Ω
HO-LO)
456µsRDT = 200 kΩ
—050 RDT=0 Ω
ns
—0600 RDT = 200 kΩ
(VCC, VBS) = 15 V, VSS = COM, DT= VSS and TA = 25 °C unless otherwise specified. The VIL, V
/COM and are applicable to the respective input leads: IN and SD. The VO, IO, and
SS
Logic “1” input voltage for HO & logic “0” for LO2.5——
IH
Logic “0” input voltage for HO & logic “1” for LO——0.8
IL
——
V
µA
High level output voltage, V
Low level output voltage, V
BIAS
O
- V
O
——
— — 1.4 IO = 0 A
——0.2IO = 20 mA
0.8
Offset supply leakage current——50VB = VS = 600 V
Quiescent VBS supply current2060150
Quiescent VCC supply current0.41.01.6mA
Logic “1” input bias current — 25 60 IN = 5 V, SD = 0 V
Logic “0” input bias current — — 5.0 IN = 0 V, SD = 5 V
VCC and VBS supply undervoltage positive going
threshold
VCC and V
supply undervoltage negative going
BS
threshold
8.08.99.8
7.48.29.0
µA
V
Hysteresis0.30.7—
Output high short circuit pulsed current1.41.9—
A
Output low short circuit pulsed current1.82 .3—
VS = 0 V
and I
IH,
IN
VCC = 10 V to 20 V
V
= 0 V or 5 V
IN
VO = 0 V,
PW ≤ 10 µs
VO = 15 V,
PW ≤ 10 µs
www.irf.com3
Functional Block Diagrams
2184
IN
VSS/COM
LEVEL
SHIFT
PULSE
GENERATOR
IRS2184/IRS21844(S)PbF
VB
UV
HV
LEVEL
SHIFTER
PULSE
FILTER
DETECT
R
Q
R
S
HO
VS
SD
DT
VCC
LO
COM
+5V
DEADTIME
VSS/COM
LEVEL
SHIFT
DELAY
UV
DETECT
VB
UV
PULSE
FILTER
DETECT
DETECT
R
Q
R
S
HO
VS
VCC
UV
LO
21844
HV
LEVEL
IN
DEADTIME
+5V
VSS/COM
LEVEL
SHIFT
PULSE
GENERATOR
SHIFTER
SD
LEVEL
SHIFT
DELAY
COM
VSS/COM
VSS
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IRS2184/IRS21844(S)PbF
Lead Definitions
Symbol Description
IN
SD
DT Programmable deadtime lead, referenced to VSS. (IRS21844 only)
VSS Logic ground (IRS21844 only)
V
B
HO High-side gate drive output
V
S
V
CC
LO Low-side gate drive output
COM Low-side return
Lead Assignments
Logic input for high-side and low-side gate driver outputs (HO and LO), in phase with HO
(referenced to COM for IRS2184 and VSS for IRS21844)
Logic input for shutdown (referenced to
COM for IRS2184 and VSS for IRS21844)
High-side floating supply
High-side floating supply return
Low-side and logic fixed supply
1
IN
2
SD
3
COM
4
LO
V
8
B
HO
7
V
6
S
V
5
CC
1
IN
2
SD
3
COM
4
LO
8-Lead PDIP8-Lead SOIC
IRS2184PbFIRS2184SPbF
V
HO
V
14
13
B
12
11
S
10
9
8
1
IN
2
SD
3
VSS
4
DT
5
COM
6
LO
7
V
CC
1
IN
2
SD
3
VSS
4
DT
5
COM
6
LO
7
V
CC
14-Lead PDIP14-Lead SOIC
IRS21844PbFIRS21844SPbF
V
V
HO
V
V
HO
V
CC
B
S
8
B
7
6
S
5
14
13
12
11
10
9
8
www.irf.com5
IRS2184/IRS21844(S)PbF
IN
SD
IN(LO)
50%
50%
IN(HO)
HO
LO
LO
HO
t
on
t
r
90%90%
10%10%
Figure 1. Input/Output Timing DiagramFigure 2. Switching Time Waveform Definitions
50%50%
IN
SD
50%
t
sd
HO
90%
LO
Figure 3. Shutdown Waveform Definitions
HO
LO
DT
LO-HO
MDT=
10%
90%
DT
Figure 4. Deadtime Waveform Definitions
LO-HO
t
off
90%
- DT
DT
HO-LO
HO-LO
10%
t
f
IN
(LO)
LO
50%
HO
10%
MT
90%
50%
IN
(HO)
MT
HOLO
Figure 5. Delay Matching Waveform Definitions
www.irf.com6
IRS2184/IRS21844(S)PbF
Turn-on Propagation Delay (ns)
Turn-on Propagation Delay (ns)
Turn-off Propagation Delay (ns)
1400
1200
1000
Max.
800
Typ.
600
400
-50-250255075100 125
Temperature (oC)
Figure 6A. Turn-On Propagation Delay
vs. Temperature
700
600
500
400
Max.
300
Typ.
200
100
-50-250255075100 125
Temperature (oC)
1400
1200
Max.
1000
Typ.
800
600
400
101214161820
Supply Voltage (V)
Figure 6B. Turn-On Propagation Delay
vs. Supply Voltage
700
600
500
Max.
400
Typ.
300
200
100
101214161820
Supply Voltage (V)
Figure 7A. Turn-Off Propagation Delay
vs. Temperature
Figure 7B. Turn-Off Propagation Delay
vs. Supply Voltage
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IRS2184/IRS21844(S)PbF
SD Propagation Delay (ns)
Turn-On Rise Time (ns)
SD Propagation Delay (ns)
Turn-On Rise Time (ns)
500
400
300
Max.
200
Typ.
100
0
-50-250255075100 125
Temperature (oC)
Figure 8A. SD Propagation Delay
vs. Temperature
120
100
80
60
Max
40
Typ.
20
0
-50-250255075100 125
Temperature (oC)
500
400
Max.
300
Typ.
200
100
0
101214161820
Supply Voltage (V)
Figure 8B. SD Propagation Delay
vs. Supply Voltage
120
100
Max.
80
60
Typ.
40
20
0
101214161820
Supply Voltage (V)
Figure 9A. Turn-On Rise Time vs.
Temperature
Figure 9B. Turn-On Rise Time vs. Supply
Voltage
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