IRF IRGPS60B120KDP Schematic [ru]

IRGPS60B120KDP

G

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

• Super-247 Package.

• Lead-Free

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Significantly Less Snubber Required

• Excellent Current Sharing in Parallel Operation.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 105
IC @ TC = 100°C Continuous Collector Current 60
I

CM

I

LM

IF @ TC = 25°C Diode Continuous Forward Current 120
IF @ TC = 100°C Diode Continuous Forward Current 60
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 595
PD @ TC = 100°C Maximum Power Dissipation 238
T

J

T

STG

Collector-to-Emitter Voltage 1200 V

Pulsed Collector Current 240 A
Clamped Inductive Load Current  240

Diode Maximum Forward Current 240
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Motor Control Co-Pack IGBT

C

E

N-channel

Super-247™

PD- 95913

V

= 1200V

CES

V

typ. = 2.50V

CE(on)

@ VGE = 15V,

ICE = 60A, Tj=25°C

W

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight ––– 6.0 (0.21) ––– g (oz)
Le Internal Emitter Inductance (5mm from package) ––– 13 ––– nH

Junction-to-Case - IGBT ––– ––– 0.20
Junction-to-Case - Diode ––– ––– 0.41 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 40
Recommended Clip Force 20 (2) ––– ––– N(kgf)

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9/22/04

IRGPS60B120KDP

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA

/∆T

Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C)

J

Collector-to-Emitter Saturation Voltage ––– 2.33 2.50 IC = 50A VGE = 15V

––– 2.50 2.75 V I

= 60A

C

––– 2.79 3.1 IC = 50A, TJ = 125°C
––– 3.04 3.5 I

V

∆V

g
I

fe

CES

GE(th)

GE(th)

Gate Threshold Voltage 4.0 5.0 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ––– -1 2 – – – mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C)

Forward Transconductance ––– 34.4 ––– S VCE = 50V, IC = 60A, PW=80µs
Zero Gate Voltage Collector Current ––– ––– 500 µA VGE = 0V, VCE = 1200V

= 60A, TJ = 125°C

C

––– 650 1350 VGE = 0V, VCE = 1200V, TJ = 125°C

V

FM

Diode Forward Voltage Drop ––– 1.82 2.10 IC = 50A

––– 1.93 2.20 V IC = 60A
––– 1.96 2.20 IC = 50A, TJ = 125°C
––– 2.13 2.40 IC = 60A, TJ = 125°C

I

GES

Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Qg Total Gate Charge (turn-on) ––– 340 510 IC = 60A
Qge Gate - Emitter Charge (turn-on) ––– 40 60 nC VCC = 600V
Q
E
E
E
E
E
E
t

d(on)

t

r

t

d(off)

t

f

C
C
C

gc
on
off
tot
on
off
tot

ies
oes
res

Gate - Collector Charge (turn-on) ––– 165 248 VGE = 15V
Turn-On Switching Loss ––– 3214 4870 µJ IC = 60A, VCC = 600V
Turn-Off Switching Loss ––– 4783 5450 VGE = 15V,RG = 4.7Ω, L =200µH
Total Switching Loss ––– 8000 10320 Ls = 150nH TJ = 25°C
Turn-On Switching Loss ––– 5032 6890 TJ = 125°C
Turn-Off Switching Loss ––– 7457 8385 µJ Energy losses include "tail" and
Total Switching Loss ––– 12500 15275 diode reverse recovery.
Turn-On Delay Time ––– 72 94 IC = 15A, VCC = 600V
Rise Time ––– 32 45 VGE = 15V, RG = 4.7Ω L =200µH
Turn-Off Delay Time ––– 366 400 ns Ls = 150nH, TJ = 125°C
Fall Time ––– 45 58
Input Capacitance ––– 4300 ––– VGE = 0V
Output Capacitance ––– 395 ––– pF VCC = 30V
Reverse Transfer Capacitance ––– 160 ––– f = 1.0MHz

TJ = 150°C, IC = 240A, Vp =1200V

RBSOA Reverse Bias Safe Operting Area FULL SQUARE

VCC = 1000V, VGE = +15V to 0V
RG = 4.7Ω
TJ = 150°C, Vp =1200V

SCSOA Short Circuit Safe Operting Area 10 ––– ––– µs

VCC = 900V, VGE = +15V to 0V,

RG = 4.7Ω
Erec Reverse Recovery energy of the diode ––– 3346 ––– µJ TJ = 125°C
t

rr

I

rr

Diode Reverse Recovery time ––– 180 ––– ns VCC = 600V, IF = 60A, L =200µH
Diode Peak Reverse Recovery Current –– – 50 ––– A VGE = 15V,RG = 4.7Ω, Ls = 150nH

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Ref.Fig.

5, 6
7, 9
10

11
9,10
11 ,12

8

Ref.Fig.

23

CT1

CT4
WF1
WF2

13,15

14, 16

CT4
WF1
WF2

22

4

CT2

CT3
WF4

17,18,19

20, 21

CT4,WF3

IRGPS60B120KDP

140

LIMITED BY PACKAGE

120

100

80

)
A

(

C

I

60

40

20

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

1000

700

600

500

)

400

W

(

t

o

t

300

P

200

100

0

0 50 100 150 200

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

1000

100

)
A

(

10

C

I

DC

1

0.1
1 10 100 1000 10000

V

(V)

CE

Fig. 3 - Forward SOA

TC = 25°C; T

≤ 150°C

JS

2 µs
10 µs

100 µs

1ms
10ms

100

)
A

C

I

10

1

10 100 1000 10000

V

(V)

CE

Fig. 4 - Reverse Bias SOA

TJ = 150°C; V

GE

=15V

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IRGPS60B120KDP

120

VGE = 18V

)
A

(

E
C

I

100

VGE = 15V
VGE = 12V
VGE = 10V

80

VGE = 8.0V

60

40

20

0

012345

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

120

VGE = 18V

)
A

(
I

100

E
C

VGE = 15V
VGE = 12V
VGE = 10V

80

VGE = 8.0V

60

40

20

0

012345

V

(V)

CE

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

120

VGE = 18V

)
A

(

E
C

I

100

VGE = 15V
VGE = 12V
VGE = 10V

80

VGE = 8.0V

60

40

20

0

012345

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 125°C; tp = 80µs

120

100

80

)
A

(

60

F

I

40

20

0

0123

-40°C
25°C
125°C

VF (V)

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80µs

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