Datasheet IRF5806PbF Datasheet (IRF)

D

G

A

D

S

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free

PD - 95476A

IRF5806PbF

HEXFET® Power MOSFET

V

DSS

-20V 86mΩ@VGS = -4.5V -4.0A

R

max I

DS(on)

D

147mΩ@VGS = -2.5V -3.0A

Description

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The TSOP-6 package with its customized leadframe produces a HEXFET

®

power MOSFET with R

DS(on)

60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R

DS(on)

reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

1

2

3

Top View

6

5

4

TSOP-6

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.0 ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.3 A I

DM

PD @TA = 25°C Maximum Power Dissipation 2.0 W PD @TA = 70°C Maximum Power Dissipation 1.3 W

Linear Derating Factor 0.02 W/°C

V

GS

TJ , T

STG

Drain-Source Voltage -20 V

Pulsed Drain Current -16.5

Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

www.irf.com 1

Maximum Junction-to-Ambient 62.5 °C/W

8/31/05

IRF5806PbF

S

D

G

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– 47.1 86 VGS = -4.5V, ID = -4.0A   67.5 147 VGS = -2.5V, ID = -3.0A 

mΩ

Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA Forward Transconductance 6.4 ––– ––– S VDS = -10V, ID = -4.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 12V

––– ––– -15 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 8 .3 11.4 ID = -4.0A Gate-to-Source Charge ––– 1.2 ––– nC VDS = -16V Gate-to-Drain ("Miller") Charge ––– 2.6 ––– VGS = -4.5V Turn-On Delay Time ––– 6.2 9.3 VDD = -10V, VGS = -4.5V Rise Time ––– 27 41 ID = -1.0A Turn-Off Delay Time ––– 94 140 RG = 6.0Ω

ns

Fall Time ––– 126 190 RD = 10Ω  Input Capacitance ––– 594 ––– VGS = 0V Output Capacitance ––– 114 ––– pF VDS = -15V Reverse Transfer Capacitance ––– 87 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

 



-2.0

A

-16.5

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V  Reverse Recovery Time ––– 116 174 ns TJ = 25°C, IF = -2.0A Reverse Recovery Charge ––– 90 135 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square Copper board, t

≤ 10sec.

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

2 www.irf.com

IRF5806PbF

100

10

TOP

BOTTOM

VGS

-7.5V

-5.0V

-4.5V

-3.5V

-3.0V

-2.7V

-2.0V

-1.5V

-1.50V

1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

100

10

TOP

BOTTOM

VGS

-7.5V

-5.0V

-4.5V

-3.5V

-3.0V

-2.7V

-2.0V

-1.5V

-1.50V

1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output Characteristics

2.0

I =

D

-4.0A

1.5

°

T = 25 C

J

10

°

T = 150 C

J

1.0

(Normalized)

D

-I , Drain-to-Source Current (A)

V = -15V

DS

1

1.0 1.5 2.0 2.5 3.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Juncti on Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-4.5V

Vs. Temperature

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IRF5806PbF

1000

800

600

400

V

=

0V,

GS

C

=

C

iss gs gd , ds

C

rss gd

C

oss ds gd

C

iss

+ C

=

C

=

C

+ C

f = 1MHz

C SHORTED

C, Capacitance (pF)

200

0

1 10 100

C

oss

C

rss

-V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

I =

-4.0A

GS

D

8

6

4

2

V =-16V

DS

-V , Gate-to-Source Voltage (V)

0

0 4 8 12 16

Q , Total Gate C harge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

10

°

T = 150 C

J

1

°

T = 25 C

SD

-I , Reverse Drain Current (A)

0.1

0.2 0.6 1.0 1.4

-V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

10

100us

1

D

-I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C Single Pulse

0.1

0.1 1 10 100

°

J

-V , Drain-to-Source Voltage (V)

DS

1ms

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF5806PbF

+

-

V

DS

9

1

V

t

5.0

4.0

3.0

2.0

D

-I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

T , Case T e mperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

d(on)tr

GS

0%

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

D = 0.50

thJA

0.20

10

0.10

0.05

0.02

0.01

1

SINGLE PU L SE

(THER M AL RESPONSE)

Thermal Response(Z )

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF5806PbF

V

S

Current Regulator

)

0.20

Ω

( e

c

n

a

t

s

i

s

0.15

e R n O e

c

r

u

0.10

o S

o

t

-

n

i

a

r

0.05

D ,

)

n

o

( S D

0.00

R

1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5

-V

GS,

ID = -4.0A

Gate -to - Source Voltage (V)

)

0.20

Ω

( e

c

n

a

t

0.16

s

i

s

e R n O

0.12

e

c

r

u

o S

-

0.08

o

t

-

n

i

a

r D

,

0.04

) n

o (

S D

0.00

R

0 5 10 15 20

VGS = -2.5V

VGS = -4.5V

-ID , Drain Current ( A )

Fig 12. Typical On-Resistance Vs.

Gate Voltage

Q

G

10 V

Q

GS

G

Q

GD

Charge

Fig 14a. Basic Gate Charge Waveform

Fig 13. Typical On-Resistance Vs.

Drain Current

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

-3mA

I

G

Current Sampling Resistors

V

+

I

D

Fig 14b. Gate Charge Test Circuit

D

6 www.irf.com

IRF5806PbF

0.8

0.7

0.6

) V

(

)

h

t

0.5

( S G

V

-

0.4

0.3

0.2

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

ID = -250µA

Fig 15. Typical Vgs(th) Vs.

Junction Temperature

100

80

)

60

W

( r

e w

o

40

P

20

0

0.0001 0.0010 0.0100 0.1000 1.0000 10.0000

Time (sec)

Fig 16. Typical Power Vs. Time

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IRF5806PbF

TSOP-6 Package Outline

TSOP-6 Part Marking Information

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

DATE CODE

Y = YEAR

PART NUMBER

TOP

PART NUMBER CODE REFERENCE:

A = S I3443DV B = IRF5800 C = IRF 5850 D = IRF5851 E = IRF585 2 F = IRF5801

I = IRF 5805 J = IRF 5806 K = IRF5810 L = IRF 5804 M = IR F5803 N = IRF5802

No te: A line abo ve th e work week (as s hown here) indicates Lea d-Free.

W = WEE K

LOT

CODE

YEA R 2001Y1

2003 200434

2006 200767

2009 201090

W = (27-52) IF PRECEDED BY A LETTER

2001 2002AB

2004 2005DE

2007 2008GH

2010 K

WORK WEEK

22002 02

52005

82008

WORK

YYEAR

WEEK

F2006

J2009

W

01

03 04

24 25 26

27 28

30

50 51

A B C D

X Y Z

W A

B CC2003 29 D

X Y

8 www.irf.com

TSOP-6 Tape & Reel Information

IRF5806PbF

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/05

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Datasheet IRF5806PbF Datasheet (IRF) [ru]

Specifications and Main Features

Frequently Asked Questions

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