IRF IRF5806PbF Schematic [ru]

D

G

A

D

D

D

S

l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free

PD - 95476A

IRF5806PbF

HEXFET® Power MOSFET

V

DSS

-20V 86mΩ@VGS = -4.5V -4.0A

R

max I

DS(on)

D

147mΩ@VGS = -2.5V -3.0A

Description

These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.

The TSOP-6 package with its customized leadframe
produces a HEXFET

®

power MOSFET with R

DS(on)

60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R

DS(on)

reduction enables a current-handling increase of nearly
300% compared to the SOT-23.

1

2

3

Top View

6

5

4

TSOP-6

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.3 A
I

DM

PD @TA = 25°C Maximum Power Dissipation 2.0 W
PD @TA = 70°C Maximum Power Dissipation 1.3 W

Linear Derating Factor 0.02 W/°C

V

GS

TJ , T

STG

Drain-Source Voltage -20 V

Pulsed Drain Current -16.5

Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

www.irf.com 1

Maximum Junction-to-Ambient 62.5 °C/W

8/31/05

IRF5806PbF

S

D

G

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– 47.1 86 VGS = -4.5V, ID = -4.0A 
 67.5 147 VGS = -2.5V, ID = -3.0A 

mΩ

Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 6.4 ––– ––– S VDS = -10V, ID = -4.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 12V

––– ––– -15 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 8 .3 11.4 ID = -4.0A
Gate-to-Source Charge ––– 1.2 ––– nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 2.6 ––– VGS = -4.5V
Turn-On Delay Time ––– 6.2 9.3 VDD = -10V, VGS = -4.5V
Rise Time ––– 27 41 ID = -1.0A
Turn-Off Delay Time ––– 94 140 RG = 6.0Ω

ns

Fall Time ––– 126 190 RD = 10Ω 
Input Capacitance ––– 594 ––– VGS = 0V
Output Capacitance ––– 114 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 87 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

 





-2.0

A

-16.5

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 
Reverse Recovery Time ––– 116 174 ns TJ = 25°C, IF = -2.0A
Reverse Recovery Charge ––– 90 135 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square Copper board, t

≤ 10sec.

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

2 www.irf.com

IRF5806PbF

100

10

TOP

BOTTOM

VGS

-7.5V

-5.0V

-4.5V

-3.5V

-3.0V

-2.7V

-2.0V

-1.5V

-1.50V

1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

100

100

10

TOP

BOTTOM

VGS

-7.5V

-5.0V

-4.5V

-3.5V

-3.0V

-2.7V

-2.0V

-1.5V

-1.50V

1

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output Characteristics

2.0

I =

D

-4.0A

1.5

°

T = 25 C

J

10

°

T = 150 C

J

1.0

(Normalized)

D

-I , Drain-to-Source Current (A)

V = -15V

DS

1

1.0 1.5 2.0 2.5 3.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Juncti on Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-4.5V

Vs. Temperature

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