IPS FTP06N03N Schematics
Features:
Applications:
FTP06N03N
Symbol Parameter FTP06N03N Units
Symbol Parameter Min. Typ. Max. Units Test Conditions
Caution:
Pb
N-Channel MOSFET
Lead Free Package and Finish
• Automotive/Telecom
• DC Motor Control
• Class D Amplifier
• Uninterruptible Power Supply (UPS)
V
DSS
R
DS(ON)
(Max.) I
25V 6 m: 65A
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
G
D
S
Ordering Information
TO-220
Not to Scale
PART NUMBER PACKAGE BRAND
FTP06N03N TO-220 FTP06N03N
o
Absolute Maximum Ratings T
25
C unless otherwise specified
=
C
V
DSS
I
D
@ 100 oC Continuous Drain Current Figure 3
D
I
DM
P
D
V
GS
E
AS
I
AS
dv/dt Peak Diode Recovery dv/dt (NOTE *3) 5.0 V/ns
T
L
T
PKG
T
and T
J
Drain-to-Source Voltage (NOTE *1) 25 V
Continuous Drain Current 65*
Pulsed Drain Current, VGS@ 10V (NOTE *2) Figure 6
Power Dissipation 65 W
o
Derating Factor above 25
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Engergy
L=1.0 mH
Pulsed Avalanche Rating Figure 8
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
STG
Temperature Range
C0.43W/
-55 to 175
G
205 mJ
300
260
D
D
S
AI
o
C
o
C
*Drain Current limited by Maximum Package Current Rating,50 Amps.
Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
R
TJC
R
TJA
Junction-to-Case
Junction-to-Ambient -- -- 62 1 cubic foot chamber, free air.
©2010 InPower Semiconductor Co., Ltd.
-- -- 2.3
Page 1 of 9
o
C/W
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175
FTP06N03N REV. A Jun. 2010
o
C
.
ON Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
OFF Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Resistive Switching Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Dynamic Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Tc=25oC unless otherwise specified
BV
'BV
DSS
DSS
Drain-to-Source Breakdown Voltage 25 -- --
BreakdownVoltage Temperature
/
' T
J
Coefficient, Figure 11.
--
0.08
V
-V/
o
C
VGS=0V, ID=250μA
Reference to 25
I
=250μA
D
o
C,
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage -- -- 100
Gate-to-Source Reverse Leakage -- -- -100 V
TJ=25
--
-- --
o
unless otherwise specified
C
-- 1
100
μA
nA
=25V, VGS=0V
V
DS
=20V, VGS=0V
V
DS
=150oC
T
c
VGS=+20V
= -20V
GS
V
=10V, ID=30A
GS
(NOTE *4)
=5.0V, ID=16A
V
GS
(NOTE *4)
V
V
=
DS
GS
=15V, ID=35A
V
DS
R
DS(ON)
V
GS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
Gate Threshold Voltage, Figure 12. 1.0 -- 3.0
gfs Forward Transconductance
-- 5.0 6.0 m:
-- 6.5 9.5 m:
V
--
38
-- S
(NOTE *4)
Essentially independent of operating temperature
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance -- 1680 --
Output Capacitance -- 260 --
Reverse Transfer Capacitance -- 400 --
Total Gate Charge -- 35 --
Gate-to-Source Charge -- 6.0 --
Gate-to-Drain (“Miller”) Charge -- 14 --
pF
nC
VGS=0V
V
DS
f=1.0MHz
Figure 14
VDD=20V
I
D=15A
V
GS
Figure 15
,
I
=
D
=20V
=10
250PA
V
Essentially independent of operating temperature
t
d(ON)
t
rise
t
d(OFF)
t
fall
©2010 InPower Semiconductor Co., Ltd.
Turn-on Delay Time -- 13 --
Rise Time -- 45 -- ID=15A
Turn-Off Delay Time -- 52 -- VGS=10V
ns
Fall Time -- 55 --
Page 2 of 9
FTP06N03N REV. A Jun. 2010
VDD=20V
=5.1:
R
G
Source-Drain Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Tc=25oC unless otherwise specified
I
S
I
SM
V
SD
Reverse Recovery Time -- 51 -- ns VGS=0V
t
rr
Q
rr
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Charge -- 55 -- nC IF=35A, di/dt=100 A/μs
--
--
-- --
-- 65 A Integral pn-diode
--
260 A
1.5
V
in MOSFET
I
=35A, VGS=0V
S
Notes:
*1. TJ = +25oC to +175oC.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
= 35A di/dt < 100 A/μs, VDD < BV
*3. I
SD
*4. Pulse width <
380μs; duty cycle < 2%.
©2010 InPower Semiconductor Co., Ltd.
, TJ=+175oC.
DSS
Page 3 of 9
FTP06N03N REV. A Jun. 2010
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