IOR ST330C-C User Manual

查询ST330C..C SERIES供应商

PHASE CONTROL THYRISTORS Hockey Puk Version

Bulletin I25155 rev. C 04/00

ST330C..C SERIES

Features

Center amplifying gate

Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)

Typical Applications

DC motor controls

Controlled DC power supplies
AC controllers

Major Ratings and Characteristics

Parameters ST330C..C Units

I

T(AV)

I

T(RMS)

I

TSM

@ T

hs

@ T

hs

@ 50Hz 9000 A

@ 60Hz 9420 A

720 A

55 °C

1420 A

25 °C

720A

case style TO-200AB (E-PUK)

I2t@

V

DRM/VRRM

t

q

T

J

50Hz 405 KA2s

@ 60Hz 370 KA

typical 100 µs

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400 to 1600 V

- 40 to 125 °C

2

s

1

ST330C..C Series

Bulletin I25155 rev. C 04/00

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code peak and off-state voltage repetitive peak voltage @ T

04 400 500

08 800 900

ST330C..C 12 1200 1300 50

14 1400 1500

16 1600 1700

On-state Conduction

Parameter ST330C..C Units Conditions

I

Max. average on-state current 720 (350) A 180° conduction, half sine wave

T(AV)

@ Heatsink temperature 55 (75) °C double side (single side) cooled

Max. RMS on-state current 1420 DC @ 25°C heatsink temperature double side cooled

I

T(RMS)

I

Max. peak, one-cycle 9000 t = 10ms No voltage

TSM

non-repetitive surge current 9420 A t = 8.3ms reapplied

2

I

t Maximum I2t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.

2

√t Maximum I2√t for fusing 4050 KA2√s t = 0.1 to 10ms, no voltage reapplied

I

V

Low level value of threshold

T(TO)

1

voltage

High level value of threshold

V

T(TO)

2

voltage

Low level value of on-state

r

t1

slope resistance

r

High level value of on-state

t2

slope resistance

Max. on-state voltage 1.96 V Ipk= 1810A, TJ = TJ max, tp = 10ms sine pulse

V

TM

I

Maximum holding current 600

H

I

Typical latching current 1000

L

Switching

Parameter ST330C..C Units Conditions

di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs

of turned-on current T

t

Typical delay time 1.0

d

t

Typical turn-off time 100

q

, max. repetitive V

, maximum non- I

RSM

DRM/IRRM

VVmA

7570 t = 10ms 100% V

7920 t = 8.3ms reapplied Sinusoidal half wave,

370 t = 8.3ms reapplied

287 t = 10ms 100% V

KA2s

262 t = 8.3ms reapplied

0.91 (16.7% x π x I

V

0.92 (I > π x I

T(AV)

0.58 (16.7% x π x I
mΩ

0.57 (I > π x I

mA

1000 A/µs

µs

T(AV)

= 25°C, anode supply 12V resistive load

T

J

= TJ max, anode voltage ≤ 80% V

J

Gate current 1A, d ig/dt = 1A/µs

= 0.67% V

V

d

I

= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V

TM

= 20V/µs, Gate 0V 100Ω, tp = 500µs

dv/dt

RRM

RRM

< I < π x I

T(AV)

),TJ = TJ max.

< I < π x I

T(AV)

),TJ = TJ max.

= 25°C

DRM, TJ

), TJ = TJ max.

T(AV)

), TJ = TJ max.

T(AV)

DRM

max.

= TJ max

J

2

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Blocking

Parameter ST330C..C Units Conditions

dv/dt Maximum critical rate of rise of

off-state voltage

I

Max. peak reverse and off-state

RRM

leakage current

I

DRM

500 V /µsTJ = TJ max. linear to 80% rated V

50 m A TJ = TJ max, rated V

Triggering

Parameter ST330C..C Units Conditions

PGMMaximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms

Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50

P

G(AV)

I

Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms

GM

Maximum peak positive

+V

GM

gate voltage

-V

Maximum peak negative

GM

gate voltage

20

5.0

TYP. MAX.

I

DC gate current required

GT

to trigger

200 -

100 200

50 -

2.5 -

V

DC gate voltage required

GT

to trigger

I

DC gate current not to trigger 10 mA

GD

1.8 3.0

1.1 -

VGDDC gate voltage not to trigger 0.25 V

W

V

= TJ max, tp ≤ 5ms

T

J

= - 40°C

T

J

mA T

= 25°C

J

TJ = 125°C

TJ = - 40°C

VTJ = 25°C

= 125°C

T

J

= TJ max

T

J

ST330C..C Series

Bulletin I25155 rev. C 04/00

DRM

applied

DRM/VRRM

Max. required gate trigger/ cur­rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied

Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated

anode-to-cathode applied

V

DRM

Thermal and Mechanical Specification

Parameter ST330C..C Units Conditions

Max. operating temperature range -4 0 to 125

T

J

Max. storage temperature range - 40 to 1 50

T

stg

R

Max. thermal resistance, 0.09 DC operation single side cooled

thJ-hs

junction to heatsink 0.04 DC operation double side cooled

Max. thermal resistance, 0.02 DC operation single side cooled

R

thC-hs

case to heatsink 0.01 DC operation double side cooled

F Mounting force, ± 10% 9800 N

(1000) (Kg)

wt Approximate weight 83 g

Case style TO - 200AB (E-PUK) See Outline Table

°C

K/W

K/W

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