IOR ST180C-C User Manual
Bulletin I25164 rev. C 02/00
ST180C..C SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST180C..C Units
I
T(AV)
I
T(RMS)
I
TSM
@ T
hs
@ T
hs
@ 50Hz 5000 A
@ 60Hz 5230 A
350 A
55 °C
660 A
25 °C
350A
case style TO-200AB (A-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 125 KA2s
@ 60Hz 114 KA
typical 100 µs
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400 to 2000 V
- 40 to 125 °C
2
s
1
ST180C..C Series
Bulletin I25164 rev. C 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage @ T
04 400 500
08 800 900
ST180C..C 30
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
On-state Conduction
Parameter ST180C..C Units Conditions
I
Max. average on-state current 350 (140) A 180° conduction, half sine wave
T(AV)
@ Heatsink temperature 55 (85) °C double side (single side) cooled
Max. RMS on-state current 660 @ 25°C heatsink temperature double side cooled
I
T(RMS)
I
Max. peak, one-cycle 5000 t = 10ms No voltage
TSM
non-repetitive surge current 5230 A t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 125 t = 10ms No voltage Initial TJ = TJ max.
2
√t Maximum I2√t for fusing 1250 KA2√s t = 0.1 to 10ms, no voltage reapplied
I
V
Low level value of threshold
T(TO)
1
voltage
High level value of threshold
V
T(TO)
2
voltage
Low level value of on-state
r
t1
slope resistance
High level value of on-state
r
t2
slope resistance
V
Max. on-state voltage 1.96 V Ipk= 750A, TJ = TJ max, tp = 10ms sine pulse
TM
I
Maximum holding current 600
H
I
Max. (typical) latching current 1000 (300)
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
VVmA
4200 t = 10ms 100% V
4400 t = 8.3ms reapplied Sinusoidal half wave,
114 t = 8.3ms reapplied
KA2s
88 t = 10ms 100% V
81 t = 8.3ms reapplied
1.08 (16.7% x π x I
V
1.14 (I > π x I
T(AV)
1.18 (16.7% x π x I
mΩ
1.14 (I > π x I
mA T
T(AV)
= TJ max, anode supply 12V resistive load
J
RRM
RRM
< I < π x I
T(AV)
),TJ = TJ max.
< I < π x I
T(AV)
),TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
max.
= TJ max
J
2
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ST180C..C Series
Bulletin I25164 rev. C 02/00
Switching
Parameter ST180C..C Units Conditions
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current T
t
Typical delay time 1.0
d
t
Typical turn-off time 100
q
Blocking
Parameter ST180C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
I
Max. peak reverse and off-state
DRM
leakage current
I
RRM
Triggering
Parameter ST180C..C Units Conditions
PGMMaximum peak gate power 10 TJ = TJ max, tp ≤ 5ms
P
Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
G(AV)
Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
I
GM
+V
Maximum peak positive
GM
gate voltage
Maximum peak negative
-V
GM
gate voltage
DC gate current required
I
GT
to trigger
V
DC gate voltage required
GT
to trigger
I
DC gate current not to trigger 10 m A
GD
VGDDC gate voltage not to trigger 0.25 V
1000 A/µs
= TJ max, anode voltage ≤ 80% V
J
Gate current 1A, dig/dt = 1A/µs
= 0.67% V
V
d
µs
I
= 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
TM
dv/dt
DRM, TJ
= 20V/µs, Gate 0V 100Ω, tp = 500µs
500 V/µsTJ = TJ max linear to 80% rated V
30 m A TJ = TJ max, rated V
W
20
= TJ max, tp ≤ 5ms
VT
J
5.0
TYP. MAX.
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
T
= - 40°C
J
mA T
= 25°C
J
TJ = 125°C
TJ = - 40°C
VTJ = 25°C
T
= 125°C
J
= TJ max
T
J
Max. required gate trigger/ current/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
= 25°C
DRM/VRRM
anode-to-cathode applied
DRM
DRM
applied
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