Datasheet SD253N-R Datasheet (IOR)

Bulletin I2065 rev. A 09/94
SD253N/R SERIES
FAST RECOVERY DIODES Stud Version
Features
High power FAST recovery diode series
Typical Applications
Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications
250A
Major Ratings and Characteristics
Parameters SD253N/R Units
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
I2t@
V
RRM
trrrange 1.5 to 2.0 µs
T
J
@ 50Hz 5350 A @ 60Hz 5600 A
50Hz 143 KA2s
@ 60Hz 130 KA
range 400 to 1600 V
@ T
J
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250 A
85 °C
392 A
25 °C
- 40 to 125 °C
2
s
case style
DO-205AB (DO-9)
1
SD253N/R Series
Bulletin I2065 rev. A 09/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
Type number Code peak and off-state voltage repetitive peak voltage T
04 400 500
SD253N/R..S15 08 800 900
10 1000 1100 12 1200 1300
SD253N/R..S20 14 1400 1500
16 1600 1700
Forward Conduction
Parameter SD253N/R Units Conditions
I
Max. average forward current 250 A 180° conduction, half sine wave.
F(AV)
@ Case temperature 85 °C
I
Max. RMS current 392 A DC @ 74°C case temperature
F(RMS)
Max. peak, one-cycle 5350 t = 10ms No voltage
I
FSM
non-repetitive forward current 5600 t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 143 t = 10ms No voltage Initial TJ = TJ max.
2
I
t Maximum I2√t for fusing 1430 KA2√s t = 0.1 to 10ms, no voltage reapplied
Low level of threshold voltage 0.87 (16.7% x π x I
V
F(TO)1
High level of threshold voltage 1.17 (I > π x I
V
F(TO)2
r
Low level of forward slope resistance 0.62 (16.7% x π x I
f1
High level of forward slope resistance 0.29 (I > π x I
r
f2
V
Max. forward voltage 1.38 V Ipk= 785A, TJ = 25°C, tp = 400 µs square pulse
FM
max. repetitive V
RRM
, maximum non- I
RSM
VVmA
4500 t = 10ms 100% V 4710 t = 8.3ms reapplied Sinusoidal half wave,
130 t = 8.3ms reapplied 101 t = 10ms 100% V
92 t = 8.3ms reapplied
A
KA2s
V
m
F(AV)
), TJ = TJ max.
F(AV)
F(AV)
), TJ = TJ max.
F(AV)
RRM
RRM
< I < π x I
< I < π x I
), TJ = TJ max.
F(AV)
), TJ = TJ max.
F(AV)
max.
RRM
= 125°C
J
35
Recovery Characteristics
Code
T
= 25 oC
J
typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
pk
Square Pulse @ 25% I
di/dt V
r
t
rr
RRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)
S15 1.5 2.9 90 44
S20 2.0 3.2 107 46
750 25 - 30
= 125 °C
J
QrrI
rr
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SD253N/R Series
Bulletin I2065 rev. A 09/94
Thermal and Mechanical Specification
Parameter SD253N/R Units Conditions
T
Max. operating temperature range -40 to 125
J
Max. storage temperature range -40 to 150
T
stg
Max. thermal resistance, junction to case 0.115 DC operation
R
thJC
Max. thermal resistance, case to heatsink 0.08 Mounting surface, smooth, flat and greased
R
thCS
T Mounting torque ± 10% 31 Not lubricated threads
24.5 Lubricated threads
wt Approximate weight 250 g
Case style DO-205AB (DO-9) See Outline Table
R
Conduction
thJC
(The following table shows the increment of thermal resistence R
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.010 0.008 TJ = TJ max. 120° 0.013 0.014
90° 0.017 0.019 K/ W 60° 0.025 0.027 30° 0.044 0.044
°C
K/W
Nm
when devices operate at different conduction angles than DC)
thJC
Ordering Information Table
1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5 - Voltage code: Code x 100 = V 6 -trr code (see Recovery Characteristics table) 7 - P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
M = Stud base DO-205AB (DO-9) M16 X 1.5
8 -7 B = Flag top terminals (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
9 - V = Glass-metal seal
Device Code
SD 25 3 R 16 S20 P B V
2 3 4
(see Voltage Ratings table)
RRM
51
7689
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SD253N/R Series
Bulletin I2065 rev. A 09/94
Outline Table
GLASS-METAL SEAL
19 (0.75)
MAX.
9.5 ( 0.37) MIN.
4 (0.16) MAX.
MAX.
39 (1.53)
DIA. 8.5 (0.33) NOM.
75 (2.95 ) MIN.
28.5 (1.12)
21 (0.82)
DIA. 28.5 (1.08) MAX.
MAX.
MAX.
16 (0.63)
MAX.
* FOR METRIC DEVICE: M16 X 1.5
3/4-16UNF-2A*
200 (7.87) ± 10 (0.39)
C.S. 35mm
(0.054 s.i.)
SW 32
GLASS-METAL SEAL
70 (2.75) MAX.
2
DIA. 28.5 (1.12) MAX.
MAX.
28.5 (1.12)
Conform to JEDEC DO-205AB (DO-9)
All dimensions in millimeters (inches)
21 (0.83)
16 (0.63)
14 (0.55)
MAX.
DIA. 6.5 (0.26)
13 (0.51)
62 ( 2.4 4)
MAX.
21 (0.83)
DO-205AB (DO-9) Flag
All dimensions in millimeters (inches)
*FOR METRIC DEVICE: M16 X 1.5
3/4"-16UNF-2A*
3 (0.12)
32 (1.26)
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SD253N/R Series
Bulletin I2065 rev. A 09/94
130
120
SD253N/R Seri es R (DC) = 0.115 K/W
thJC
130
120
SD253N/R Series R (DC) = 0.115 K/W
thJC
110
110
Cond uction Angle
100
100
90
80
Maximum Allowable Case Temperature (°C)
0 50 100 15 0 200 250 300
30°
60°
90°
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
350
180°
300
250
200
120°
90° 60° 30°
RMS Limit
120°
180°
90
80
70
Maxim um Allowab l e C as e Tem p era tur e (°C)
0 100 200 300 400
500 450 400 350 300
30°
60°
90°
120°
Average Forward Curren t (A)
DC
180°
120°
90° 60° 30°
250
150
100
50
0
Maximum Average Forward Power Loss (W)
0 50 100 150 200 250
Conduction Angle
SD253N/R Series T = 125°C
J
Average Forward Curren t (A)
Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics
200
RMS Limit
150 100
50
0
Maximum Average Forward Pow er Loss (W)
0 100 200 300 400
Avera ge For wa rd Cur rent (A)
Conduction P eri od
180°
DC
Conduction Period
SD253N/R Series T = 125°C
J
5000
At Any Rated Load Condition And With
Rate d V Applied Following Surge.
4500
RRM
4000 3500
Init ial T = 125°C
J
@ 60 Hz 0.0 083 s @ 50 Hz 0.0 100 s
6000
Maximum Non Repetitive Surge Current
Ver sus Pulse Train Duration.
5000
No Voltage Reapplied Rated V Reapplied
4000
3000
2500 2000
SD253N/R Seri es
1500
Peak Half Sine Wave Forward Current (A)
1000
110100
Number Of Equal Amplitu de Ha lf Cycle Curr ent Pulses (N)
Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current
3000
2000
SD253N/R Ser ies
Peak Half Sine Wave Forward Current (A)
1000
0.01 0.1 1 Pulse Train Duration (s)
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Init ial T = 1 2 5 °C
J
RRM
5
SD253N/R Series
Bulletin I2065 rev. A 09/94
10000
1
Steady State Value: R = 0.1 15K/W
thJC
1000
thJC
(DC Operation)
0.1
100
10
T = 25 °C
J
T = 125 °C
J
0.01 SD253N/R Series
SD25 3N/R Se r ies
Instantaneous Forward Current (A)
Transient Thermal Impedance Z (K/W)
400 A
200 A
0.001
0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
130 120 110
thJC
I = 750 A Square Pulse
100
90 80 70 60 50 40 30
r
20 10
Maximum Reverse Recov ery Curr ent - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
SD253N/R..S15 Series T = 125 °C, V = 30V
J
10 20 30 40 50 60 70 80 90 100
CharacteristicFig. 7 - Forward Voltage Drop Characteristics
FM
400 A
200 A
r
1
01234
Instantaneous Forward Voltage (V)
3.6 SD253N/R..S15 Series T = 125 °C, V = 30V
J
r
3.2
I = 750 A
FM
2.8
Square Pulse
2.4
400 A
2
200 A
Maximum Reverse Recovery Time - Trr (µs)
1.6
10 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
170 160 150
I = 750 A
FM
Square Pulse
140 130 120 110 100
90 80 70 60 50
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
SD253N/R..S15 Series T = 125 °C, V = 30V
J
10 20 30 40 50 60 70 80 90 100
Fig. 9 - Recovery Time Characteristics Fig. 10 - Recovery Charge Characteristics Fig. 11 - Recovery Current Characteristics
3.6
3.4
3.2
2.8
SD253N/R..S20 Series T = 125 °C, V = 30V
J
3
400 A 200 A
r
I = 750 A
FM
Square Pulse
300
250
200
150
I = 750 A
FM
Square Pulse
400 A
200 A
130 120 110 100
I = 750 A
FM
Square Pulse
400 A
90 80
200 A
70 60 50
2.6
Maximum Reverse Recovery Time - Trr (µs)
2.4
10 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
100
50
Maximum Revers e Recover y Charge - Qrr (µC )
Rate Of Fall Of Forward Current - di/dt (A/µs)
SD253N/R..S20 Se ries T = 125 °C, V = 30V
J
r
10 20 30 40 50 60 70 80 90 100
40 30 20
Maximum Reverse Rec ove ry Current - Irr (A)
Rate Of Fall Of For ward Current - di/dt (A/µs)
SD253N/R ..S20 Ser ie s T = 125 °C , V = 30V
J
r
10 20 30 40 50 60 70 80 90 100
Fig. 14 - Recovery Current CharacteristicsFig. 13 - Recovery Charge CharacteristicsFig. 12 - Recovery Time Characteristics
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SD253N/R Series
Bulletin I2065 rev. A 09/94
1E4
1
0.4
1E3
1E2
0.01
Peak Forward Current (A)
tp
1E1
1E11E21E31E4
0.2
0.1
0.04
0.02
SD253N/R..S15 Series Sinusoidal Pulse T = 125°C, V = 800V
J
dv/dt = 1000V/µs
RRM
10
4
2
20 joules per pulse
1E4
1E1
1E11E21E31E4
Pu lse Bas ewidth (µs)
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
Peak Forward Current (A)
1E1
1E11E21E31E4
SD253N/R..S20 Series Sinusoidal Pulse
T = 125°C, V = 1120V
J
tp
dv/dt = 1000V/µs
RRM
20 joules per pulse
10
4 2 1
0.4
0.2
0.1
0.04
0.02
0.01
1E4
1E11E21E31E4
1E1
Pulse Basewidth (µs)
Fig. 16 - Maximum Total Energy Loss Per Pulse Characteristics
0.4
0.2
0.1
SD253N/R..S15 Series Trapezoidal Pulse
T = 125°C, V = 800V
tp
dv/dt = 1000V/µs; di/dt=50A/µs
RRM
J
Pulse Basewidth (µs)
0.2
SD253N/R. .S2 0 Series
Trapezoidal Pulse
T = 125°C, V = 1120V
tp
dv/dt = 1000V/µs; di/dt=50A/µs
RRM
J
Pulse Bas e widt h (µs)
20 jo ules per p ulse
10
4
2
1
20 joules per p ulse
10
4
2
1
0.4
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