IOR MBRB16-PbF User Manual
Bulletin PD-21044 rev. A 06/06
e
Base
N/C
MBRB16..PbF
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics Values Units
I
Rectangular 16 A
F(AV)
waveform
V
RRM
I
@ tp = 5 μs sine 1800 A
FSM
VF@ 16 Apk, TJ = 125°C 0.57 V
T
J
35 - 45 V
- 65 to 150 °C
16 Amp
I
= 16Amp
F(AV)
VR = 35 - 45V
Description/ Features
The MBR16.. Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150° C junction
temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery
protection.
150° C TJ operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
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Case Styles
D2PAK
Cathode
1
2
3
Anod
1
MBRB16..PbF Series
Bulletin PD-21044 rev. A 06/06
Voltage Ratings
Part number MBRB1635PbF MBRB1645PbF
V
Max. DC Reverse Voltage (V)
R
V
Max. Working Peak Reverse Voltage (V)
RWM
35 45
Absolute Maximum Ratings
Parameters MBR16.. Units Conditions
I
Max. Average Forward Current 16 A @ TC = 134 °C, (Rated VR)
F(AV)
I
Non-Repetitive Peak Surge Current 1800 5μs Sine or 3μs Rect. pulse
FSM
A
150
EASNon-Repetitive Avalanche Energy 24 mJ T
Surge applied at rated load condition halfwave single
phase 60Hz
= 25 °C, I
J
= 3.6 Amps, L = 3.7 mH
AS
IARRepetitive Avalanche Current 3.6 A Current decaying linearly to zero in 1 μsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Following any rated load
condition and with rated
V
applied
RRM
Electrical Specifications
Parameters MBR16.. Units Conditions
VFMMax. Forward Voltage Drop(1) 0.63 V @ 16A
0.57 V @ 16A
IRMMax. Instantaneus Reverse Current 0.2 mA TJ = 25 °C
(1) 40 mA TJ = 125 °C
CTMax. Junction Capacitance 1400 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LSTypical Series Inductance 8.0 nH Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change 10000 V/ μs
(Rated VR)
TJ = 25 °C
TJ = 125 °C
Rated DC voltage
(1) Pulse Width < 300μs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters MBR16.. Units Conditions
TJMax. Junction Temperature Range -65 to 150 °C
T
Max. Storage Temperature Range -65 to 175 °C
stg
R
Max. Thermal Resistance Junction 1.50 °C/W DC operation
thJC
to Case
R
Typical Thermal Resistance, Case 0.50 °C/W Mounting surface, smooth and greased
thCS
to Heatsink
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
Marking Device MBRB16.. Case style D2Pak
Kg-cm
(Ibf-in)
2
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MBRB16..PbF Series
1
0 0.2 0.4 0.6 0.8 1 1.2
1
0 1020304050
0
5
0
0.00001 0.0001 0.001 0.01 0.1 1 10
Bulletin PD-21044 rev. A 06/06
00
(A)
F
10
Instantaneous Forward Current - I
Tj = 150˚C
Tj = 125˚C
100
Tj = 150˚C
(mA)
R
10
1
0.1
125˚C
100˚C
75˚C
50˚C
0.01
Reverse Current - I
0.001
.0001
0 5 10 15 20 25 30 35 40 4
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
0000
Tj = 25˚C
(pF)
T
1000
25˚C
Tj = 25˚C
Junction Capacitance - C
1
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
(°C/W)
thJC
Thermal Impedance Z
0.1
0.01
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
(Thermal Resistance)
Single Pulse
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
.001
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t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
Characteristics
thJC
3
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