IOR IRSF3021 User Manual
查询IRSF3021供应商
Provisional Data Sheet No. PD 6.068B
FULLY PROTECTED POWER MOSFET SWITCH
Features
■ Controlled Slew Rate Reduces EMI
■ Over Temperature Protection with Auto-Restart
■ Linear Current-Limit Protection
■ Active Drain-to-Source Clamp
■ ESD Protection
■ Compatible with Standard Power MOSFET
■ Low Operating Input Current
■ Monolithic Construction
■ Logic Level Input Threshold
Description
The IRSF3021 Lamp and DC Motor Driver is a fully protected three
terminal monolithic SMART POWER MOSFET that features current
limiting, over-temperature protection, gate-to-source ESD protection
and gate-to-drain clamp for over-voltage protection.
The on-chip protection circuit limits the drain current in the on-state.
The over-temperature circuitry turns off the POWER MOSFET when
the junction temperature exceeds 165°C. The device restarts automatically once it has cooled down below the reset temperature.
The IRSF3021 is specifically designed for driving loads that require
overload protection and in-rush current control while operating in automotive and industrial environments. Targeted applications include
resistive loads such as lamps or capacitive loads such as airbag squibs
and DC motor drives.
V
ds(clamp)
R
ds(on)
I
lim
T
j(sd)
E
AS
Applications
■ Cabin Lighting
■ Airbag System
■ Programmable Logic Controller
■ DC Motor Drive
Available Packages
IRSF3021L
(SOT-223)
IRSF3021
50 V
200 m
200 mJ
IRSF3021
(TO-220AB)
3.0 A
165
Ω
o
C
IRSF3021 Block Diagram
Input
Drain
Source
IRSF3021
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless
otherwise specified.)
Minimum Maximum Units Test Conditions
V
ds, max
V
in, max
I
ds
P
d
E
AS
V
esd1
V
esd2
T
Jop
T
Stg
T
L
Static Electrical Characteristics
(Tc = 25°C unless otherwise specified.)
V
ds,clamp
R
ds(on)
I
dss
V
th
I
i,on
I
i,off
V
in, clamp
V
sd
Continuous Drain to Source Voltage 50
Continuous Input Voltage -0.3 8
Continuous Drain Current self limited
Power Dissipation 30 W T
Unclamped Single Pulse Inductive Energy 200 mJ
Electrostatic Discharge Voltage (Human Body Model) 4000
Electrostatic Discharge Voltage (Machine Model) 1000 200pF, 0Ω
Operating Junction Temperature Range -40
Storage Temperature Range -40 175 °C
Lead Temperature (Soldering, 10 seconds) 300
self-limited
V
V
≤ 25°C
c
1000pF. 1.5kΩ
Minimum Typical Maximum Units Test Conditions
Drain to Source Clamp Voltage 50 56 65
Drain to Source On Resistance 155 200 mΩ V
Drain to Source Leakage Current 250 µA Vds = 40V, Vin = 0V
Input Threshold Voltage 1.0 2.0 3.0 V V
Input Supply Current (Normal Operation) 100 300 µA Vin = 5V
Input Supply Current (Protection Mode) 500 µA Vin = 5V
Input Clamp Voltage 9 10 V Iin = 1mA
Body-Drain Diode Forward Drop➂ 1.5 V I
Ids = 6A, tp = 700 µS
V
= 5V, Ids = 2A
in
= Vin, Ids + Iin= 10mA
ds
= -2A, R
ds
= 1kΩ
in
Thermal Characteristics
Minimum Typical Maximum Units Test Conditions
RΘ
RΘ
RΘ
RΘ
Junction to Case 4
jc
Junction to Ambient 60
jA
Junction to PCB 40
jc
Junction to PCB ➀ 60
jA
°C/W TO-220AB
°C/W SOT-223
Switching ElectricalCharacteristics
(VCC = 14V, Resistive Load (RL) = 10Ω, Rin= 100Ω. Specifications measured at TC= 25°C unless otherwise specified.)
Minimum Typical Maximum Units Test Conditions
t
don
t
r
t
doff
t
f
SR Output Positive Slew Rate -4 4
SR Output Positive Slew Rate -4 4 Vin = 0V to 5V, -dVds/dt
Turn-On Delay Time 10 50 Vin = 0V to 5V, 50% to 90%
Rise Time 30 80
Turn-Off Delay Time 20 60 Vin = 0V to 5V, 50% to 10%
Fall Time 15 50 Vin = 0V to 5V, 10% to 90%
Vin = 0V to 5V, 90% to 10%
µs
Vin = 0V to 5V, +dVds/dt
V/µs
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