IOR IRS21851S-PbF User Manual

Features

• Gate drive supply range from 10 V to 20 V

• Undervoltage lockout for V

• 3.3 V and 5 V input logic compatible

• Tolerant to negative transient voltage

•

Matched propagation delays for all channels

• RoHS compliant

and V

BS

CC

Data Sheet PD No. 60255 revA

Not recommended for new design:

please use IRS21850

IRS21851SPbF

SINGLE HIGH SIDE DRIVER IC

Product Summary

V

OFFSET

IO+/- 4 A / 4 A

V

OUT

600 V max.

10 V - 20 V

Description

The IRS21851 is a high voltage, high speed power
MOSFET and IGBT single high-side driver with propa­gation delay matched output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. The floating logic
input is compatible with standard CMOS or LSTTL
output, down to 3.3 V logic and can be operated up to
600 V above the ground. The output driver features a
high pulse current buffer stage designed for mini­mum driver cross-conduction. The floating channel
can be used to drive an N-channel power MOSFET
or IGBT in the high-side configuration, which oper­ates up to 600 V.

Typical Connection

V

CC

IN

V

CC

COM

V

B

HOIN

V

S

t

on/off

Package

(typ.) 160 ns & 160 ns

8-Lead SOIC

IRS21851

up to 600V

TO

LOAD

(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.

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IRS21851SPbF

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.

Symbol Definition Min. Max. Units

V

CC

V

IN

V

B

V

S

V

HO

dVs/dt Allowable VS offset supply transient relative to COM — 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

Note 1: All supplies are fully tested at 25 V. An internal 20 V clamp exists for each supply.

Low-side supply voltage -0.3 20 (Note 1)
Logic input voltage (HIN) COM -0.3 V
High-side floating well supply voltage -0.3 620 (Note 1)
High-side floating well supply return voltage VB - 20 VB + 0.3
Floating gate drive output voltage VS - 0.3 V

Package power dissipation @ TA ≤ +25 °C — 1.25 W
Thermal resistance, junction to ambient — 100 °C/W
Junction temperature -55 150
Storage temperature -55 150
Lead temperature (soldering, 10 seconds) — 300

CC

B

+ 0.3

V

+ 0.3

°C

Recommended Operating Conditions

For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to COM. The offset rating are tested with supplies of (VCC-COM)=(VB-VS)=15 V.

Symbol Definition Min. Max. Units

V

CC

V

IN

V

B

V

S

V

HO

T

A

N ote 2: Logic operational for VS of -5 V to 600 V. Logic state held for VS of -5 V to -VBS. (Please refer to the Design
Tip DT97-3 for more details).

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Low-side supply voltage 10 20
HIN input voltage COM V
High-side floating well supply voltage VS + 10 VS + 20
High-side floating well supply offset voltage Note 2 600
Floating gate drive output voltage V
Ambient temperature -40 125 °C

S

V

CC

B

V

IRS21851SPbF

Dynamic Electrical Characteristics

(VCC-COM)=(VB-VS)=15 V, TA = 25 oC. CL = 1000 pF unless otherwise specified. All parameters are referenced to COM.

Symbol Definition Min. Typ.Max.UnitsTest Conditions

t

on

t

off

t

t

Static Electrical Characteristics

(VCC-COM)=(VB-VS)=15 V. The VIN, V
referenced respective VS and are applicale to the respective output leads HO. The V
COM. The V

Symbol Definition Min. Typ.Max.UnitsTest Conditions

V

CCUV+VCC

V

CCUV-

V

BSUV+

V

BSUV-

I

LK

I

QBS

I

QCC

V

V

V

OH, HO

V

OL, HO

I

IN+

I

IN-

I

O+, HO

I

O-, HO

Turn-on propagation delay — 160 210 (VS -COM) = 0 V
Turn-off propagation delay — 160 210 (VS -COM) = 600 V
Turn-on rise time — 15 40

r

Turn-off fall time — 15 40

f

and IIN parameters are referenced to COM. The VO and IO parameters are

TH,

parameters are referenced to V

BSUV

S.

ns

parameters are referenced to

CC

supply undervoltage positive going threshold 8.0 8.9 9.8

V

supply undervoltage negative going threshold 7.4 8.2 9.0

CC

V

VBS supply undervoltage positive going threshold 8.0 8.9 9.8
VBS supply undervoltage negative going threshold 7.4 8.2 9.0
High-side floating well offset supply leakage current — — 50 VB = VS = 600 V
Quiescent VBS supply current — 80 150

µA

Quiescent VCC supply current — 120 240
Logic “1” input voltage 2.5 — —

IH

Logic “0” input voltage — — 0.8

IL

HO high level output voltage, V
HO low level output voltage, V

BIAS

O

- V

O

— 20 60

— 10 30
Logic “1” input bias current — 10 20 V
Logic “0” input bias current — 0 5 V

Output high short circuit pulsed current HO — 4 —

Output low short circuit pulsed current HO — 4 —

V

mV

µA

A

VO = 0 V, V

VO = 15 V, V

HIN = 0 V or 5 V

IO = 2 mA

= 5 V

HIN

= 0 V

HIN

= 0 V

IN

PW ≤ 10 µs

= 15 V

IN

PW ≤ 10 µs

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Functional Block Diagram

IRS21851SPbF

COM

VCC

5V

VREG

HIN

VCCUV

DETECT

PULSE

GEN

LEVEL

SHIFT UP

Lead Definitions

Symbol Description

V

CC

COM Ground
V

B

HO High-side driver outputs
V

S

HIN Logic inputs for high-side gate driver output (in phase)

Low-side supply voltage

High-side drive floating supply

High voltage floating supply return

HIGHSIDE CHANNLE1

FILTER,

LATCH

UV DETECT

DRIVER

VB

HO

VS

Lead Assignments

VCC

1

2

HIN

IRS21851S

3

4

COM

8-Lead SOIC

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VB

HO

VS

8

7

6

5

IRS21851PbF

HIN

IN

OUT

t

50%

on

t

r

90%

10%

50%

90%

t

off

10%

Figure 1. Switching Time Waveforms

t

f

HO

Figure 2. Input/Output Timing Diagram

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