IOR IRS21531-DS-PbF User Manual

Data Sheet No. PD60238 revE

IRS2153(1)D(S)PbF

Features Product Summary

Integrated 600 V half-bridge gate driver


 C

, RT programmable oscillator

T

 15.4 V Zener clamp on V
 Micropower startup
 Non-latched shutdown on C

Internal bootstrap FET


 Excellent latch immunity on all inputs and outputs

 +/- 50 V/ns dV/dt immunity
 ESD protection on all pins

 8-lead SOIC or PDIP package

 Internal deadtime

CC

SELF-OSCILLATING HALF-BRIDGE DRIVER IC

pin (1/6th V

T



)

CC

V

600 V Max

OFFSET

Duty cycle 50%

Driver source/sink

current

V

15.4 V typ.

clamp

Deadtime

180 mA/260 mA typ.

1.1 µs typ. (IRS2153D)

0.6 µs typ. (IRS21531D)

Description

The IRS2153(1)D is based on the popular IR2153 self­oscillating half-bridge gate driver IC using a more
advanced silicon platform, and incorporates a high
voltage half-bridge gate driver with a front end oscillator
similar to the industry standard CMOS 555 timer. HVIC
and latch immune CMOS technologies enable rugged
monolithic construction. The output driver features a high
pulse current buffer stage designed for minimum driver
cross-conduction. Noise immunity is achieved with low
di/dt peak of the gate drivers.

Typical Connection Diagram

+ AC Rectified Line

RVCC

VCC

1

RT

2

RT

CT

CVCC

CT

COM

3

4

Package

IRS2153(1)DPbF IRS2153(1)DSPbF

8

7

6

IRS2153(1)D

5

PDIP8 SO8

VB

CBOOT

HO

VS

LO

MHS

L

MLS

RL

- AC Rectified Line

1

IRS2153(1)D

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions.

Parameter

Symbol Definition Min. Max. Units

VB

VS

VHO High side floating output voltage

VLO Low side output voltage -0.3

IRT RT pin current

VRT RT pin voltage

VCT CT pin voltage

ICC

I

OMAX

dVS/dt

PD

PD

R

thJA

R

thJA

TJ

TS

TL

High side floating supply voltage -0.3 625

High side floating supply offset voltage

VB - 25 VB + 0.3

V

– 0.3 VB + 0.3

S

V

+ 0.3

CC

-5 5 mA

-0.3

-0.3

VCC + 0.3

VCC + 0.3

Supply current (Note 1) --- 20

Maximum allowable current at LO and HO due to external
power transistor Miller effect.

-500 500

Allowable offset voltage slew rate -50 50 V/ns

Maximum power dissipation @ T

Maximum power dissipation @ T

Thermal resistance, junction to ambient, 8-Pin DIP --- 85

Thermal resistance, junction to ambient, 8-Pin SOIC --- 128

≤ +25 ºC, 8-Pin DIP

A

≤ +25 ºC, 8-Pin SOIC

A

--- 1.0

--- 0.625

Junction temperature -55 150

Storage temperature -55 150

Lead temperature (soldering, 10 seconds) --- 300

V

V

mA

W

ºC/W

ºC

Note 1:

This IC contains a zener clamp structure between the chip V

and COM which has a nominal

CC

breakdown voltage of 15.4 V. Please note that this supply pin should not be driven by a DC, low
impedance power source greater than the V

specified in the Electrical Characteristics section.

CLAMP

2

IRS2153(1)D

Recommended Operating Conditions

For proper operation the device should be used within the recommended conditions.

Parameter

Symbol Definition Min. Max. Units

VBS

VS

VCC

ICC

TJ

High side floating supply voltage

Steady state side floating supply offset voltage -3.0 (Note 2) 600

Supply voltage

Supply current (Note 3) 5 mA

Junction temperature -40 125 ºC

Note 2:

Note 3:

It is recommended to avoid output switching conditions where the negative-going spikes at the V
node would decrease V

Enough current should be supplied to the

below ground by more than -5 V.

S

pin of the IC to keep the internal 15.6 V zener diode

V

CC

clamping the voltage at this pin.

Recommended Component Values

Parameter

Symbol Component Min. Max. Units

RT

CT CT pin capacitor value

Timing resistor value 1

V

BIAS

(VCC, V

) = 14 V, V

BS

=0 V and T

S

= 25 °C, CLO = CHO = 1 nF.

A

VCC - 0.7 V

+

V

CCUV

+0.1 V

CLAMP

V

CC CLAMP

---

330 --- pF

V

kΩ

S

Frequency vs. RT

1,000,000

CT Values

100,000

10,000

1,000

Frequency (Hz)

100

10

1,000 10,000 100,000 1,000,000

RT (O h m)

For further information, see Fig. 12.

330pf

470pF

1nF

2.2nF

4.7nF

10nF

3

IRS2153(1)D

Electrical Characteristics

V

(VCC, V

BIAS

referenced to COM and are applicable to the respective output leads: HO or LO. CLO = CHO = 1 nF.

Symbol Definition Min Typ Max Units

Low Voltage Supply Characteristics

V

CCUV

V

CCUV

V

CCUVHYS

I

QCCUV

IQCC Quiescent

ICC

V

CC

Floating Supply Characteristics

I

QBS

V

BSUV+

V

BSUV-

) = 14 V, CT = 1 nF, V

BS

=0 V and T

S

= 25 °C unless otherwise specified. The output voltage and current (VO and IO) parameters are

A

Test Conditions

Rising VCC undervoltage lockout threshold 10.0 11.0 12.0

+

-

Falling VCC undervoltage lockout threshold 8.0 9.0 10.0

VCC undervoltage lockout hysteresis 1.6 2.0 2.4

Micropower startup V

supply current --- 800 1000

V

CC

supply current --- 1.8 --- mA

V

CC

VCC zener clamp voltage 14.4 15.4 16.8 V ICC = 5 mA

CLAMP

supply current --- 130 170

CC

V

µA

Quiescent VBS supply current --- 60 80 µA

V

supply undervoltage positive going

BS

threshold

8.0 9.0 9.5

V

V

supply undervoltage negative going

BS

threshold

7.0 8.0 9.0

V

≤ V

CC

R

= 36.9 kΩ

T

CCUV-

ILK Offset supply leakage current --- --- 50

Oscillator I/O Characteristics

f

OSC

Oscillator frequency

18.4 19.0 19.6

88 93 100

d RT pin duty cycle --- 50 --- %

ICT CT pin current ---

I

UV-mode CT pin pulldown current 0.20 0.30 0.6 mA

CTUV

V

Upper CT ramp voltage threshold --- 9.32 ---

CT+

V

Lower CT ramp voltage threshold --- 4.66 ---

CT-

V

CT voltage shutdown threshold 2.2 2.3 2.4

CTSD

V

High-level RT output voltage, VCC - VRT

RT+

V

Low-level RT output voltage

RT-

V

UV-mode RT output voltage

RTUV

--- 10 50 I

--- 100 300 I

--- 10 50 I

--- 100 300 I

--- 0 100

0.02

1.0

--- 10 50

V

SD-mode RT output voltage, VCC - VRT

RTSD

--- 100 300

µA

kHz

µA

V

mV

VB = VS = 600 V

R

= 36.5 kΩ

T

R

= 7.15 kΩ

T

fo < 100 kHz

VCC = 7 V

CCUV-

RT = -100 µA

RT = -1 mA

RT = 100 µA

RT = 1 mA

≤ V

V

CC

I

RT = -100 µA,

VCT = 0 V

I

RT = -1 mA,

VCT = 0 V

4

IRS2153(1)D

Electrical Characteristics

(VCC, V

V

BIAS

parameters are referenced to COM and are applicable to the respective output leads: HO or LO. CLO = CHO = 1 nF.

Symbol Definition Min Typ Max Units

Gate Driver Output Characteristics

VOH

VOL

V

OL_UV

tr

tf

tsd

td

td

IO+ Output source current --- 180 ---

IO- Output sink current --- 260 ---

)

= 14 V, C

BS

High-level output voltage ---

= 1 nF, VS=0 V and T

T

= 25 °C unless otherwise specified. The output voltage and current (V

A

VCC

Low-level output voltage --- COM ---

UV-mode output voltage --- COM ---

Output rise time --- 120 220

Output fall time --- 50 80

Shutdown propagation delay --- 350 ---

Output deadtime (HO or LO) (IRS2153D) 0.65 1.1 1.75

Output deadtime (HO or LO) (IRS21531D) 0.35 0.6 0.85

---

V

ns

µs

µs

mA

and IO)

O

Test Conditions

≤ V

,

CCUV-

I

V

CC

I

O = 0 A

O = 0 A

Bootstrap FET Characteristics

V

VB when the bootstrap FET is on --- 13.7 --- V

B_ON

I

VB source current when FET is on 40 55 ---

B_CAP

I

VB source current when FET is on 10 12 ---

B_10V

CBS=0.1 uF

mA

VB=10 V

5