IOR IRLML6402 User Manual

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PD- 93755

IRLML6402

HEXFET® Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching

G

D

V

= -20V

DSS

R

S

DS(on)

= 0.065Ω

Description

These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on­resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET



power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.

A thermally enhanced large pad leadframe has been incorporated

Micro3

into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2 A
I

DM

PD @TA = 25°C Power Dissipation 1.3
PD @TA = 70°C Power Dissipation 0.8

E

AS

V

GS

T

J, TSTG

Drain- Source Voltage -20 V

Pulsed Drain Current  -22

Linear Derating Factor 0.01 W/°C
Single Pulse Avalanche Energy 11 mJ
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C

W

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

Maximum Junction-to-Ambient 75 100 °C/W

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8/13/99

IRLML6402

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA 

J

Static Drain-to-Source On-Resistance

––– 0.050 0.065 VGS = -4.5V, ID = -3.7A 
––– 0.080 0.135 VGS = -2.5V, ID = -3.1A 

Ω

Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA
Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A 

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -20V, VGS = 0V
––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 8.0 12 ID = -3.7A
Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V 
Turn-On Delay Time ––– 350 –– – VDD = -10V
Rise Time ––– 48 ––– ID = -3.7A
Turn-Off Delay Time ––– 588 ––– RG = 89Ω

ns

Fall Time ––– 381 ––– RD = 2.7Ω
Input Capacitance ––– 633 ––– VGS = 0V
Output Capacitance –– – 145 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

-1.3

-22

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V 
Reverse Recovery Time ––– 29 43 n s TJ = 25°C, IF = -1.0A
Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Surface mounted on 1" square single layer 1oz. copper FR4 board,

steady state.

 Starting T

RG = 25Ω, I

= 25°C, L = 1.65mH

J

= -3.7A.

AS

** For recommended footprint and soldering techniques refer to application note #AN-994.

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D

S

IRLML6402

100

10

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-2.25V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

100

J

100

10

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-2.25V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

-3.7A

°

T = 25 C

J

°

T = 150 C

J

1.5

1.0

(Normalized)

D

-I , Drain-to-Source Current (A)

V = -15V

DS

10

2.0 3.0 4.0 5.0 6.0 7.0 8.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-4.5V

Vs. Temperature

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