IOR IRL1104S-L User Manual
查询IRL1104L供应商
PD -91840
PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL1104S)
l Low-profile through-hole (IRL1104L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRL1104L) is available for lowprofile applications.
2
Pak is
G
IRL1104S/L
HEXFET® Power MOSFET
2
D Pa k
D
S
V
DSS
R
DS(on)
= 0.008Ω
ID = 104A
TO-262
= 40V
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 104
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74 A
I
DM
PD @TA = 25°C Power Dissipation 2.4 W
PD @TC = 25°C Power Dissipation 167 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 416
Linear Derating Factor 1.1 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 340 mJ
Avalanche Current 62 A
Repetitive Avalanche Energy 17 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 0.9
Junction-to-Ambient(PCB Mounted,steady-state)** ––– 62
°C/W
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10/28/98
IRL1104S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID =1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.008 VGS = 10V, ID = 62A
––– ––– 0.012
W
VGS = 4.5V, ID = 52A
Gate Threshold Voltage 1.0 ––– V VDS = VGS, ID = 250µA
Forward Transconductance 53 ––– ––– S VDS = 25V, ID = 62A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS =40V, VGS = 0V
µA
nA
VGS = -16V
Total Gate Charge –– – –– – 68 ID =62A
Gate-to-Source Charge ––– ––– 24 nC VDS = 32V
Gate-to-Drain ("Miller") Charge ––– ––– 34 VGS = 4.5V, See Fig. 6 and 13
Turn-On Delay Time ––– 18 ––– VDD = 20V
Rise Time ––– 257 ––– ID =54A
Turn-Off Delay Time ––– 32 ––– RG = 3.6Ω , VGS = 4.5V
Fall Time ––– 64 ––– RD = 0.4Ω, See Fig. 10
Internal Source Inductance 7.5
––– –––
Between lead,
nH
and center of die contact
Input Capacitance ––– 3445 ––– VGS = 0V
Output Capacitance ––– 1065 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
104
416
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =62A, VGS = 0V
Reverse Recovery Time ––– 84 126 ns TJ = 25°C, IF =62A
Reverse Recovery Charge ––– 223 335 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 15V, starting TJ = 25°C, L = 0.18mH
DD
RG = 25Ω, I
I
≤ 62A, di/dt ≤ 217A/µs, V
SD
TJ ≤ 175°C
= 62A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL1104 data and test conditions.
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
,
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2 www.irf.com
D
S
IRL1104S/L
1000
100
10
TOP
BOTTOM
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
2.7V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
1000
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.5
I =
D
104A
°
T = 25 C
J
T = 175 C
J
100
10
D
I , Drain-to-Source Current (A)
V = 50V
25
DS
1
2.0 4.0 6.0 8.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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