IOR IRK.F112 User Manual
查询IRK.F112.. SERIES供应商
Bulletin I27091 rev.A 09/97
IRK.F112.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V
Industrial standard package
UL E78996 approved
isolating voltage
RMS
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters IRK.F112.. Units
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I2t @ 50Hz 47.8 KA2s
2
I
t
q
t
rr
V
T
@ 50Hz 3090 A
@ 60Hz 3237 A
@ 60Hz 43.6 KA
√t 478 KA2√s
/ V
DRM
RRM
range - 40 to 125
J
112 A
90 °C
250 A
2
s
10 and 15 µs
2µs
up to 800 V
o
C
INT-A-pakä Power Modules
112 A
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
RRM/VDRM
Type number Code peak reverse voltage repetitive peak rev. voltage @ T
IRK.F112.. Series 30
04 400 400
08 800 800
Current Carrying Capacity
, maximum repetitive V
, maximum non- I
RSM
RRM/IDRM
VVmA
max.
= 125°C
J
I
Frequency f Units
180oel
TM
180oel
I
TM
100µs
I
TM
50Hz 220 220 350 550 2060 2900 A
400Hz 285 285 425 695 1230 1785 A
2500Hz 205 205 350 550 460 552 A
5000Hz 175 170 295 448 295 448 A
10000Hz 125 120 230 337 - - A
Recovery voltage Vr 50 50 50 50 50 50 V
Voltage before turn-on Vd 80% V
DRM
80% V
DRM
80% V
DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 90 60 90 60 90 60 °C
Equivalent values for RC circuit 47 Ω / 0.22 µF 47 Ω / 0.22 µF 47 Ω / 0.22 µF
On-state Conduction
Parameter IRK.F112.. Units Conditions
I
Maximum average on-state current 112 A 180° conduction, half sine wave
T(AV)
@ Case temperature 90 °C
Maximum RMS current 250 A TC = 90°C, as AC switch
I
T(RMS)
I
Maximum peak, one-cycle, 3090 A t = 10ms No voltage
TSM
non-repetitive surge current 3237 t = 8.3ms reapplied
2600 t = 10ms 100% V
2720 t = 8.3ms reapplied Sinusoidal half wave,
2
t Maximum I2t for fusing 47.8 KA2s t = 10ms No voltage Initial TJ = 125°C
I
43.6 t = 8.3ms reapplied
33.8 t = 10ms 100% V
30.8 t = 8.3ms reapplied
2
√t Maximum I2√t for fusing 478 KA2√s t = 0 to 10ms, no voltage reapplied
I
Low level value of threshold voltage 1.19 V (16.7% x π x I
V
T(TO)1
High level value of threshold voltage 1.43 (I > π x I
V
T(TO)2
r
Low level value of on-state slope resistance 1.67 mW (16.7% x π x I
t1
r
High level value of on-state slope resistance 1.12 (I > π x I
t2
V
Maximum on-state voltage drop 1.77 V Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse
TM
I
Maximum holding current 600 mA T
H
I
Typical latching current 1000 mA T
L
T(AV)
T(AV)
= 25°C, IT > 30 A
J
= 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
J
2
RRM
RRM
< I < π x I
T(AV)
), TJ = TJ max.
< I < π x I
T(AV)
), TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
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V
IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Switching
Parameter IRK.F112.. Units Conditions
di/dt Maximum non-repetitive rate of rise 800 A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% V
TJ = 125°C
Maximum recovery time 2 µs ITM = 350A, di/dt = -25A/µs, V
t
rr
t
Maximum turn-off time N L ITM = 350A, TJ = 125°C, di/dt = -25A/µs,
q
10 15 µs V
Blocking
Parameter IRK.F112.. Units Conditions
dv/dt Maximum critical rate of rise of off-state 1000 V/µs T
voltage
RMS isolation voltage 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s
V
INS
Maximum peak reverse and off-state 30 mA TJ = 125°C, rated V
I
RRM
leakage current
I
DRM
Triggering
Parameter IRK.F112.. Units Conditions
P
Maximum peak gate power 60 W f = 50 Hz, d% = 50
GM
Maximum peak average gate power 10 W TJ = 125°C, f = 50Hz, d% = 50
P
G(AV)
Maximum peak positive gate current 10 A TJ = 125°C, tp < 5ms
I
GM
Maximum peak negative gate voltage 5 V
- V
GM
Max. DC gate current required to trigger 20 0 m A TJ = 25°C, Vak 12V, Ra = 6
I
GT
DC gate voltage required to trigger 3 V
V
GT
DC gate current not to trigger 20 m A TJ = 125°C, rated V
I
GD
DC gate voltage not to trigger 0.25 V
V
GD
= 50V, dv/dt = 400V/µs linear to 80% V
R
= 125°C., exponential to 67% V
J
DRM/VRRM
DRM
= 50V, TJ = 25°C
R
applied
applied
DRM
DRM
DRM
Thermal and Mechanical Specifications
Parameter IRK.F112.. Units Conditions
TJMax. junction operating temperature range - 40 to 125 °C
T
Max. storage temperature range - 40 to 150
stg
R
Max. thermal resistance, junction to 0.17 K/W Per junction, DC operation
thJC
case
Max. thermal resistance, case to 0.035 K/W Mounting surface flat and greased
R
thC-hs
heatsink Per module
T Mounting torque ± 10% IAP to heatsink 4 - 6 (35 - 53) Nm
busbar to IAP 4 - 6 (35 - 53) (lb*in)
wt Approximate weight 500 (17.8) g (oz)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
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