IOR IRK.56 .71 User Manual

查询IRKC56供应商

Bulletin I27140 rev. E 10/02

IRK.56, .71 SERIES

STANDARD DIODES

Features

High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V

isolating voltage

RMS

Mechanical Description

The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.

Major Ratings and Characteristics

Parameters IRK.56 IRK.71 Units

I

F(AV)

@ 100°C

I

F(RMS)

I

@ 50Hz 1600 1790 A

FSM

@ 60Hz 1680 1870 A

I2t @ 50Hz 12.89 15.90 KA2s

@ 60Hz 11.76 14.53 KA2s
I2√t 128.9 159 KA2√s
V

range 400 to 1600 V

RRM

T

J

T

STG

60 80 A

94 126 A

- 40 to 150

- 40 to150

o

C

o

C

ADD-A-pakTM GEN V Power Modules

Benefits

Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded

The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.

60 A
80 A

Electrical Description

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

www.irf.com

1

IRK.56, .71 Series

Bulletin I27140 rev. E 10/02

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

Type number Code peak reverse voltage repetitive peak rev. voltage @ 150°C

04 400 500
06 600 700
08 800 900

IRK.56/ .71 10 1000 1100 10

12 1200 1300
14 1400 1500
16 1600 1700

Forward Conduction

Parameter IRK.56 IRK.71 Units Conditions

I

Max. average forward current 60 80 A 180° conduction, half sine wave

F(AV)

@ Case temperature 100 100 °C

I

Max. average forward current 55 70 A 180° conduction, half sine wave

F(AV)

@ Case temperature 105 108 °C

I

Max. RMS forward current 94 126 A DC @ 92°C case temperature

F(RMS)

I

Max. peak, one-cycle forward, 1600 1790 t = 10ms No voltage

FSM

non-repetitive surge current 1680 1870 t = 8.3ms reapplied

2

I

t Maximum I2t for fusing 12.89 15.90 t = 10ms No voltage Initial TJ = TJ max.

2

I

√t Maximum I2√t for fusing 128.9 159.0 KA2√s t = 0.1 to 10ms, no voltage reapplied

Low level value of threshold

V

F(TO)1

voltage
High level value of threshold

V

F(TO)2

voltage

r

Low level value of forward

f1

slope resistance
High level value of forward

r

f2

slope resistance

V

Max. forward voltage drop 1.51 1.50 V I

FM

, maximum repetitive V

RRM

, maximum non- I

RSM

VVmA

1350 1500 t = 10ms 100% V
1420 1570 t = 8.3ms reapplied Sinusoidal half wave,

11.76 14.53 t = 8.3ms reapplied

9.12 11.25 t = 10ms 100% V

8.32 10.23 t = 8.3ms reapplied

0.96 0.83 (16.7% x π x I

1.03 0.92 (I > x π x I

2.81 2.68 (16.7% x π x I

2.48 2.40 (I > x π x I

A

KA2s

V

mΩ

FM

= π x I

RRM

RRM

< I < π x I

F(AV)

), TJ = TJ max.

F(AV)

< I < π x I

F(AV)

), TJ = TJ max.

F(AV)

, TJ = 25°C, tp = 400µs square wave

F(AV)

), TJ = TJ max.

F(AV)

), TJ = TJ max.

F(AV)

RRM

max.

Blocking

Parameter IRK.56 IRK.71 Units Conditions

I

Max. peak reverse leakage

RRM

current

V

RMS isolation voltage 3500 (1 sec) V 50 Hz, circuit to base, all terminals shorted

INS

10 mA T

= 150oC

J

2

www.irf.com

IRK.56, .71 Series

Bulletin I27140 rev. E 10/02

Thermal and Mechanical Specifications

Parameter IRK.56 IRK.71 Units Conditions

T

Junction temperature range -40 to 150 °C

J

T

Storage temperature range -40 to 150 °C

stg

Max. thermal resistance,

R

thJC

junction to case
Typical thermal resistance, Mounting surface flat, smooth and greased

R

thCS

case to heatsink

T Mounting tourque ±10%

to heatsink 5
busbar 4

wt Approximate weight 110 (4) gr (oz)

Case style TO-240AA JEDEC

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance R

Devices Units

180
IRK.56 0.11 0.13 0.16 0.22 0.32 0.09 0.14 0.17 0.23 0.32
IRK.71 0.06 0.08 0.11 0.14 0.21 0.06 0.09 0.11 0.15 0.21

Sine half wave conduction Rect. wave conduction

o

120

o

0.5 0.4 K/W Per junction, DC operation

0.1 K/W
A mounting compound is recommended and the

torque should be rechecked after a period of 3 hours

Nm

to allow for the spread of the compound

when devices operate at different conduction angles than DC)

thJC

o

90

o

60

o

30

180o120

o

o

90

o

60

o

30

°C/W

Ordering Information Table

www.irf.com

Device Code

IRK D 71 / 16 A

1

3

2

1 - Module type
2 - Circuit configuration (See Circuit Configuration Table)
3 - Current code
4 - Voltage code (See Voltage Ratings Table)
5 - A: Gen V

5

4

3