IOR IRHNA9260 User Manual
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RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA9260 100K Rads (Si) 0.154Ω -29A JANSR2N7426U
IRHNA93260 300K Rads (Si) 0.154Ω -29A JANSF2N7426U
JANSR2N7426U
200V , P-CHANNEL
REF: MIL-PRF-19500/655
RAD-Hard™ HEXFET
PD - 93969
IRHNA9260
®
TECHNOLOGY
International Rectifier’s RAD-HardTM HEXFET
MOSFET technology provides high performance
power MOSFETs for space applications. This technology has over a decade of proven performance
and reliability in satellite applications. These devices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R
power losses in switching applications such as DC
to DC converters and motor control. These devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability
of electrical parameters.
DS(on) and low gate charge reduces the
Absolute Maximum Ratings
Parameter Units
ID @ VGS = -12V , TC = 25°C Continuous Drain Current -29
ID @ VGS = -12V , TC = 100°C Continuous Drain Current -18
I
DM
PD @ TC = 25°C Max. Power Dissipation 300 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ -20
T
J
T
STG
Pulsed Drain Current ➀ -116
Linear Derating Factor 2.4 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ -29 A
Repetitive Avalanche Energy ➀ 30 mJ
Operating Junction -55 to 150
Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 3.3 (Typical) g
®
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Lo w Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of P aralleling
n Hermetically Sealed
n Surface Mount
n Cer amic Package
n Light W eight
Pre-Irradiation
SMD-2
A
V/ns
o
C
For footnotes refer to the last page
www.irf.com 1
11/21/00
IRHNA9260, JANSR2N7426U Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
DSS
D
Drain-to-Source Breakdown V oltage -200 — — V VGS = 0V, ID = -1.0mA
/∆TJT emperature Coefficient of Breakdown — -0.27 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
Static Drain-to-Source On-State — — 0.154 Ω VGS = -12V, ID = -18A
Resistance — — 0.159 VGS = -12V, ID = -29A
Gate Threshold V oltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA
Forward T ransconductance 14 — — S ( )VDS > -15V, IDS = -18A ➃
Zero Gate V oltage Drain Current — — -25 VDS= -160V ,VGS=0V
— — -250 VDS = -160V ,
Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS = 20V
T otal Gate Charge — — 300 VGS = -12V, ID = -29A
Gate-to-Source Charge — — 65 n C VDS = -100V
Gate-to-Drain (‘Miller’) Charge — — 58
T urn-On Delay Time — — 37 VDD = -100V, ID = -29A
Rise Time — — 141 RG = 2.35Ω
T urn-Off Delay Time — — 148
Fall Time — — 22 0
T otal Inductance — 4.0 —
Ω
µA
VGS = 0V, TJ = 125°C
nA
ns
nH
Measured from the center of
drain pad to center of source pad
➃
C
iss
C
oss
C
rss
Input Capacitance — 6143 — VGS = 0V, VDS = -25V
Output Capacitance — 915 — pF f = 1.0MHz
Reverse T ransf er Capacitance — 159 —
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — - 29
S
I
Pulse Source Current (Body Diode) ➀ — — -116
SM
V
Diode Forward V oltage — — -3.0 V Tj = 25°C, IS = -29A, VGS = 0V ➃
SD
t
Reverse Recov ery Time — — 73 8 ns Tj = 25°C, IF = -29A, di/dt ≤ -100A/µs
rr
Q
Reverse Recovery Charge — — 12 µCV
RR
t
Forward T urn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
≤ -50V ➃
DD
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJ-PCB
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 0.42
Junction-to-PC board — 1.6 — soldered to a 2” square copper-clad board
°C/W
+ LD.
S
Radiation Characteristics
IRHNA9260, JANSR2N7426U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability .
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
BV
V
I
GSS
I
GSS
I
DSS
R
Parameter 100K Rads(Si)
Drain-to-Source Breakdown Voltage -200 — -200
DSS
GS(th)
DS(on)
Gate Threshold Voltage ➃ -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA
Gate-to-Source Leakage Forward — -100 — -100
Gate-to-Source Leakage Reverse — 100 — 10 0 VGS = 20 V
Zero Gate Voltage Drain Current — - 25 — -25 µA VDS= -160V, V
Static Drain-to-Source ➃ — 0.155 — 0.161 Ω VGS = -12V, ID =-18A
Min Max Min Max
1
300K Rads (Si)
2
Units
Test Conditions
—
VGS = 0V, ID = -1.0mA
V
nA
VGS = -20V
GS
=0V
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source ➃ — 0.154 — 0.160 Ω VGS = -12V, ID = -18A
On-State Resistance (SMD-2)
V
SD
1. Part number IRHNA9260
2. Part number IRHNA93260
Diode Forward Voltage ➃ — -3.0 — -3.0 V VGS = 0V, IS = -29A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Io n LET Energy Range
MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu 28.0 285 43.0 -200 -200 -200 -200 —
Br 36.8 305 39.0 -200 -200 -125 -75 —
-250
-200
-150
VDS
-100
-50
0
0 5 10 15 20
VGS
VDS (V)
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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