IOR IRHMS57Z60 User Manual

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查询IRHMS57Z60供应商

RADIATION HARDENED JANSR2N7478T1
POWER MOSFET 30V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)

Product Summary

Part Number Radiation Level RDS(on) ID QPL Part Number

IRHMS57Z60 100K Rads (Si) 0.0045Ω 45A* JANSR2N7478T1
IRHMS53Z60 300K Rads (Si) 0.0045Ω 45A* JANSF2N7478T1
IRHMS54Z60 500K Rads (Si) 0.0045Ω 45A* JANSG2N7478T1
IRHMS58Z60 1000K Rads (Si) 0.0045Ω 45A* JANSH2N7478T1

International Rectifier’s R5
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
of low R
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.

and low gate charge reduces the

DS(on)

TM

technology provides

2

)). The combination

PD-96961A

IRHMS57Z60

REF: MIL-PRF-19500/697

TECHNOLOGY





Low-Ohmic

TO-254AA

Features:

n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 45*

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 45*

I

DM

PD @ TC = 25°C Max. Power Dissipation 208 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  1.08

T

J

T

STG

* Current is limited by package
For footnotes refer to the last page

Pulsed Drain Current À 180

Linear Derating Factor 1.67 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy Á 1250 mJ
Avalanche Current À 45 A
Repetitive Avalanche Energy À 20.8 mJ

Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s)
Weight 9.3 (Typical) g

Pre-Irradiation

A

V/ns

o

C

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04/25/06

IRHMS57Z60, JANSR2N7478T1 Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

LS + L

D

bonded from Source Pin to Drain Pad

C

iss

C

oss

C

rss

R

g

Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 1.0mA

/∆TJTemperature Coefficient of Breakdown — 0.03 — V/°C Reference to 25°C, ID = 1.0mA

Voltage
Static Drain-to-Source On-State — — 0.0045 Ω VGS = 12V, ID = 45A
Resistance
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
Forward Transconductance 73 — — S ( ) VDS = 15V, IDS = 45A Ã
Zero Gate Voltage Drain Current — — 10 V

——25 VDS = 24V,

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 240 VGS =12V, ID = 45A
Gate-to-Source Charge — — 60 nC VDS = 15V
Gate-to-Drain (‘Miller’) Charge — — 55
Turn-On Delay Time — — 35 VDD = 15V, ID = 45A
Rise Time — — 175 VGS =12V, RG = 2.35Ω
Turn-Off Delay Time — — 80
Fall Time — — 40
Total Inductance — 6.8 — Measured from Drain lead (6mm /0.25in.

from package) with Source wires internally

Input Capacitance — 8884 — VGS = 0V, VDS = 25V
Output Capacitance — 4334 — p F f = 1.0MHz
Reverse Transfer Capacitance — 270 —
Internal Gate Resistance — 0.73 — Ω f = 1.0MHz, open drain

Ω

= 24V ,V

µA

nA

ns

nH

from package) to Source lead (6mm /0.25in.

DS

VGS = 0V, TJ = 125°C

GS

Ã

= 0V

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — 45*

S

I

Pulse Source Current (Body Diode) À — — 180

SM

V

Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 45A, VGS = 0V Ã

SD

t

Reverse Recovery Time — — 140 ns Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 350 n C VDD ≤ 25V Ã

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

* Current is limited by package

A

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thCS

R

thJA

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

For footnotes refer to the last page

2 www.irf.com

Junction-to-Case — — 0.60
Case-to-Sink — 0.21 — °C/W
Junction-to-Ambient — — 48 Typical socket mount

+ LD.

S

Radiation Characteristics

Pre-Irradiation IRHMS57Z60, JANSR2N7478T1

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability .
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

T able 1. Electrical Characteristics @ Tj = 25°C, Post T otal Dose Irradiation ÄÅ

Parameter Up to 500K Rads(Si)

BV

1. Part numbers IRHMS57Z60 (JANSR2N7478T1), IRHMS53Z60 (JANSF2N7478T1) and IRHMS54Z60 (JANSG2N7478T1)

2. Part number IRHMS58Z60 (JANSH2N7478T1)

Drain-to-Source Breakdown Voltage 30 — 30

DSS

V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)

R

DS(on)

V

SD

Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA
Gate-to-Source Leakage Forward — 100 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 24V, V
Static Drain-to-Source à — 0.0040 — 0.0045 Ω VGS =12V, ID = 45A
On-State Resistance (TO-3)
Static Drain-to-Source On-State à — 0.0045 — 0.0050 Ω VGS =12V, ID = 45A
Resistance (Low-Ohmic TO-254)
Diode Forward Voltage à — 1.2 — 1.2 V VGS = 0V , IS = 45A

Min Max Min Max

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

1

1000K Rads (Si)2

—

V

Units

Test Conditions

VGS = 0V, ID = 1.0mA

nA

VGS = 20V

GS

= 0V

Table 2. Single Event Effect Safe Operating Area

Io n LE T Energy Range

(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu 28 261 40 30 30 30 25 15
Br 37 285 37 30 30 30 23 15
I 60 344 33 25 25 20 15 8

VDS (V)

35
30
25
20
15

VDS

10

Cu
Br

I
5
0

-20-15-10-50

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

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