IOR IRG4CC40UB User Manual

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IRG4CC40UB IGBT Die in Wafer Form

Electrical Characteristics ( Wafer Form )

Parameter Description Guaranteed (Min/Max) Test Conditions

V

CE (on)

V

(BR)CES

V

GE(th)

I

CES

I

GES

Mechanical Data

Norminal Backmetal Composition, Thickness: Cr-Ni / V-Ag ( 1kA-2kA-2.5kA )
Norminal Front Metal Composition, Thickness: 99% Al, 1% Si (4 microns)
Dimensions: 0.170" x 0.232"
Wafer Diameter: 150mm, with std. < 100 > flat
Wafer thickness: .015" + / -.003"
Relevant Die Mechanical Dwg. Number 01-5219
Minimum Street Width 100 Microns
Reject Ink Dot Size 0.25mm Diameter Minimum
Ink Dot Location Consistent throughout same wafer lot
Recommended Storage Environment: Store in original container, in dessicated

Recommended Die Attach Conditions For optimum electrical results, die attach

Reference Standard IR packaged part ( for design ) : IRG4PC40U

Die Outline

Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25°C, VGE = 15V
Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25°C, I
Gate Threshold Voltage 3.0V Min.,6.0V Max. VGE = VCE , TJ =25°C, IC =250µA
Zero Gate Voltage Collector Current 300 µA Max. TJ = 25°C, VCE = 600V
Gate-to-Emitter Leakage Current ± 11µA Max. TJ = 25°C, VGE = +/- 20V

PD- 91762

IRG4CC40UB

C

600 V

Size 4

G

E

Ultra-Fast Speed

6" Wafer

nitrogen, with no contamination

temperature should not exceed 300C

= 250µA, VGE = 0V

CES

9/24/98