IOR IRFF210 User Manual
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PD - 90424C
IRFF210
REPETITIVE A V ALANCHE AND dv/dt RA TED
HEXFET
TRANSISTORS JANTXV2N6784
JANTX2N6784
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556
200V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFF210 200V 1.5Ω 2.25A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
TO-39
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 2.25
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 1.50
I
DM
PD @ TC = 25°C Max. Power Dissipation 1 5 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 5.0
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ 9.0
Linear Derating Factor 0.12 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy ➁ 48 mJ
Avalanche Current ➀ —A
Repetitive Avalanche Energy ➀ —mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g
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A
V/ns
o
C
01/22/01
IRFF210
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
∆BV
R
V
g
I
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
d(on)
d(off)
DSS
DSS
DS(on)
GS(th)
fs
GSS
GSS
g
gs
gd
r
f
S + LD
iss
oss
rss
Drain-to-Source Breakdown Voltage 20 0 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.25 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 1.5 VGS = 10V, ID = 1.50A ➃
Resistance — — 1.725 VGS =10V, ID = 2.25A ➃
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 0. 9 — — S ( ) VDS > 15V, IDS = 1.50A ➃
Zero Gate Voltage Drain Current — — 2 5 VDS= 160V , VGS=0V
— — 250 µA VDS = 160V
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 nA VGS = -20V
Total Gate Charge 4. 3 — 6. 2 VGS =10V, ID = 2.25A
Gate-to-Source Charge 0. 7 — 1 .2 n C VDS=100V
Gate-to-Drain (‘Miller’) Charge 0. 5 — 5. 0
Turn-On Delay Time — — 1 5 VDD = 100V, ID = 2.25A,
Rise Time — — 2 0 RG = 7.5Ω
Turn-Off Delay Time — — 30
Fall Time — — 2 0
Total Inductance — 7 .0 —
Input Capacitance — 1 40 VGS = 0V, VDS = 25V
Output Capacitance — 55 — pF f = 1.0MHz
Reverse Transfer Capacitance — 8 .6 —
Ω
Ω
ns
nH
VGS = 0V, TJ = 125°C
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 2.25
S
I
Pulse Source Current (Body Diode) ➀ — — 9.0
SM
V
Diode Forward Voltage — — 1.5 V Tj = 25°C, IS =2.25A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 3 50 nS Tj = 25°C, IF = 2.25A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 3 .0 µC VDD ≤ 50V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 8. 3
Junction-to-Ambient — — 175 Typical socket mount.
°C/W
+ LD.
IRFF210
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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