IOR IRF3711ZPbF, IRF3711ZSPbF, IRF3711ZLPbF User Manual

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Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l Lead-Free

Benefits

l Low R l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

and Current

DS(on)

at 4.5V V

GS

V

DSS

20V

TO-220AB

IRF3711Z

PD - 95530

IRF3711ZPbF

IRF3711ZSPbF

IRF3711ZLPbF

HEXFET® Power MOSFET

R

DS(on)

IRF3711ZS

6.0m

D2Pak

max

:

Qg

16nC

TO-262

IRF3711ZL

Absolute Maximum Ratings

Parameter Units

V

DS

V

GS

I

@ TC = 25°C

D

@ TC = 100°C

I

D

I

DM

PD @TC = 25°C

P

@TC = 100°C

D

T

J

T

STG

Drain-to-Source Voltage V

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation W

Maximum Power Dissipation

Linear Derating Factor W/°C Operating Junction and °C

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

c

Thermal Resistance

Parameter Typ. Max. Units

R

JC

θ

R

CS

θ

R

JA

θ

R

JA

θ

Notes  through  are on page 12

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

i

fi

@ 10V

GS

@ 10V

GS

gi

Max.

20

± 20

92

h

65

h

380

79

40

0.53

-55 to + 175

300 (1.6mm from case)

f

10 lbf

y

in (1.1Nym)

––– 1.89 °C/W

0.50 –––

––– 62

––– 40

A

www.irf.com 1

7/20/04

IRF3711Z/S/LPbF

/

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

∆ΒV

DSS

R

DS(on)

V

GS(th)

∆V

GS(th)

I

DSS

I

GSS

gfs Forward Transconductance 46 ––– ––– S

Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.013 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 4.8 6.0

––– 5.9 7.3

Gate Threshold Voltage 1.55 2.0 2.45 V

∆T

Gate Threshold Voltage Coefficient ––– -5.6 ––– mV/°C

J

Drain-to-Source Leakage Current ––– ––– 1.0 µA

––– ––– 150

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 16 24

Pre-Vth Gate-to-Source Charge ––– 4.6 –––

Post-Vth Gate-to-Source Charge ––– 1.4 ––– nC

Gate-to-Drain Charge ––– 5.3 –––

Gate Charge Overdrive ––– 4.7 ––– See Fig. 16

Switch Charge (Q

gs2

+ Qgd)

––– 6.7 –––

Output Charge ––– 9.5 ––– nC

Turn-On Delay Time ––– 12 –––

Rise Time ––– 16 –––

Turn-Off Delay Time ––– 15 ––– ns

Fall Time ––– 5.4 –––

Input Capacitance ––– 2150 –––

Output Capacitance ––– 680 ––– pF

Reverse Transfer Capacitance ––– 320 –––

VGS = 0V, ID = 250µA

Reference to 25°C, I

mΩ

V

= 10V, ID = 15A

GS

V

= 4.5V, ID = 12A

GS

= VGS, ID = 250µA

V

DS

V

= 16V, VGS = 0V

DS

V

= 16V, VGS = 0V, TJ = 125°C

DS

VGS = 20V

V

= -20V

GS

= 10V, ID = 12A

V

DS

= 10V

V

DS

V

= 4.5V

GS

I

= 12A

D

V

= 10V, VGS = 0V

DS

V

= 10V, VGS = 4.5V

DD

ID = 12A

Clamped Inductive Load

V

= 0V

GS

V

= 10V

DS

ƒ = 1.0MHz

Conditions

= 1mA

D

e

Avalanche Characteristics

E

AS

I

AR

E

AR

Single Pulse Avalanche Energy

Avalanche Current

c

Repetitive Avalanche Energy

d

c

Parameter Units

Typ.

–––

Max.

130

12

7.9

mJ

A

mJ

Diode Characteristics

Parameter Min. Typ. Max. Units

h

I

S

Continuous Source Current ––– –––

(Body Diode) A

I

SM

V

SD

t

rr

Q

rr

Pulsed Source Current ––– ––– 380

(Body Diode)

c

Diode Forward Voltage ––– ––– 1.0 V

Reverse Recovery Time ––– 16 24 ns

Reverse Recovery Charge ––– 6.0 9.0 nC

92

MOSFET symbol

showing the integral reverse

p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V

= 25°C, IF = 12A, VDD = 10V

T

J

di/dt = 100A/µs

Conditions

D

G

S

e

2 www.irf.com

IRF3711Z/S/LPbF

1000

VGS

TOP 10V

D

100

10

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V BOTTOM 3.0V

3.0V

60µs PULSE WIDTH

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

Tj = 25°C

1

0.1 1 10

VDS, Drain-to-Source Voltage (V)

1000

)

Α

(

t n e

r

100

u C e

c

r u o S

o

t

-

10

n

i a

r D

,

D

I

TJ = 25°C

V

DS

TJ = 175°C

= 10V

60µs PULSE WIDTH

1

2.0 3.0 4.0 5.0 6.0 7.0 8.0

VGS, Gate-to-Source Voltage (V)

1000

VGS

TOP 10V

100

D

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V BOTTOM 3.0V

10

3.0V

60µs PULSE WIDTH

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

Tj = 175°C

1

0.1 1 10

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O

)

e

d

c

e

r

z

u

i

l

o

a

S

-

m

o

r

t

o

n

N

i

( a

r D

,

) n o

( S D

R

ID = 30A

V

= 10V

GS

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

www.irf.com 3

IRF3711Z/S/LPbF

) F p

( e

c n a

t

i c a p a

C ,

C

10000

1000

100

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

Ciss

Coss

Crss

gd

iss

C

rss

C

oss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000.0

) A

( t

100.0

n e

r

r u

C n

i a

r

10.0

D e

s

r e v e

R ,

D S

I

TJ = 175°C

1.0

0.1

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Source-toDrain Voltage (V)

TJ = 25°C

SHORTED

ds

V

GS

= 0V

12

) V

( e

g a

t

l o V

e c

r u o S

o

t

e

t a

G ,

V

ID= 12A

10

8

6

4

S G

2

0

0 5 10 15 20 25 30 35 40

Q

VDS= 15V

VDS= 10V

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

10000

) A

( t

1000

n e

r

r u

C e

c

r u

100

o S

o

t

n

i a

r D

10

,

D

I

Tc = 25°C Tj = 175°C Single Pulse

1

0 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

V

, Drain-toSource Voltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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