IOR IRF3007 User Manual
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PD -94424A
AUTOMOTIVE MOSFET
Typical Applications
● 42 Volts Automotive Electrical Systems
Features
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Automotive [Q101] Qualified
HEXFET® Power MOSFET
D
G
S
IRF3007
V
= 75V
DSS
R
DS(on)
I
D
= 0.0126Ω
= 75A
Description
Specifically designed for Automotive applications, this
design of HEXFET
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of
this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide
variety of other applications.
®
Power MOSFETs utilizes the
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 80
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 56 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
E
(6 sigma) Single Pulse Avalanche Energy Tested Value 946
AS
I
AR
E
AR
T
J
T
STG
Pulsed Drain Current 320
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 280 mJ
Avalanche Current See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche Energy mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 1.1 (10) N•m (lbf•in)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.74
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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9/16/02
IRF3007
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 640 ––– VGS = 0V, VDS = 0V to 60V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.084 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 10.5 12.6 mΩ VGS = 10V, ID = 48A
Gate Threshold Voltage 2.0 –– – 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 180 ––– ––– S VDS = 25V, ID = 48A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 75V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 8 9 130 ID = 48A
Gate-to-Source Charge – –– 21 32 nC VDS = 60V
Gate-to-Drain ("Miller") Charge ––– 30 45 VGS = 10V
Turn-On Delay Time ––– 12 ––– VDD = 38V
Rise Time ––– 80 ––– ID = 48A
Turn-Off Delay Time ––– 55 ––– RG = 4.6Ω
ns
Fall Time ––– 49 ––– VGS = 10V
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3270 ––– VGS = 0V
Output Capacitance ––– 520 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 78 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 3500 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 340 ––– VGS = 0V, VDS = 60V, ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
80
320
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 48A, VGS = 0V
Reverse Recovery Time ––– 85 130 ns TJ = 25°C, IF = 48A, VDD = 38V
Reverse Recovery Charge ––– 280 420 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
C
eff. is a fixed capacitance that gives the same charging time
oss
= 25°C, L = 0.24mH
J
= 48A, VGS=10V (See Figure 12).
AS
≤ 48A, di/dt ≤ 330A/µs, V
DD
≤ V
(BR)DSS
as C
Limited by T
avalanche performance.
,
This value determined from sample failure population. 100%
oss
while V
is rising from 0 to 80% V
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
DSS
tested to this value in production.
G
G
.
D
S
D
S
IRF3007
1000
)
A
(
t
n
e
r
r
100
u
C
e
c
r
u
o
S
-
o
t
-
10
n
i
a
r
D
,
D
I
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
B OTT OM 4.5V
4.5V
20µs PULSE WIDTH
1
0.1 1 10 100
Tj = 25°C
VDS, Drain-to-Source Voltage (V)
1000
)
A
(
t
n
e
r
100
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
D
I
TJ = 175°C
10
1
4.0 5.0 6.0 7.0 8.0 9.0
TJ = 25°C
V
= 25V
DS
20µs PULSE WIDTH
VGS, Gate-t o-Source Voltage (V)
1000
)
A
(
t
n
e
r
r
100
u
C
e
c
r
u
o
S
-
o
t
-
10
n
i
a
r
D
,
D
I
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
B OTT OM 4.5V
4.5V
20µs PULSE WIDTH
1
0.1 1 10 100
Tj = 175°C
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
100
)
S
(
80
e
c
n
a
t
c
u
d
60
n
o
c
s
n
a
r
T
40
d
r
a
w
r
o
F
20
,
s
f
G
0
TJ = 175°C
TJ = 25°C
V
= 25V
DS
20µs PULSE WIDTH
0 40 80 120 160
ID, Drain-to-Source Cur rent (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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