IOR IRF2907ZS-7PPbF User Manual
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D
G
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Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
PD - 97031
IRF2907ZS-7PPbF
HEXFET® Power MOSFET
V
= 75V
DSS
R
DS(on)
= 3.8mΩ
Description
Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET
utilizes the latest processing techniques and advanced packaging technology to achieve extremely
low on-resistance and world -class current ratings.
Additional features of this design are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Server &
Telecom OR'ing, Automotive and low voltage Motor
Drive Applications.
Absolute Maximum Ratings
Parameter Units
ID @ TC = 25°C
I
@ TC = 100°C
D
I
@ TC = 25°C
D
I
DM
PD @TC = 25°C
V
GS
E
AS
E
(tested)
AS
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
c
c
@ 10V (Silicon Limited)
GS
@ 10V (See Fig. 9)
GS
@ 10V
GS
g
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junct ion-to-Case
Case-to-Sink, Flat, Greased Surface
Junct ion-to-Ambient
Junct ion-to-Ambient (PCB Mount, steady state)
j
j
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
(Package Limited)
d
h
ij
ID = 160A
Max.
180
120
160
700
300
2.0
± 20
160
410
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
––– 0.50 °C/W
0.50 –––
––– 62
––– 40
A
W
W/°C
V
mJ
A
mJ
°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com 1
08/03/05
IRF2907ZS-7PPbF
/
g
µ
g
µ
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
∆Β
R
DS(on)
V
GS(th)
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
V
DSS
SMD
eff.
Drain-to-Source Breakdown Voltage75––––––V
∆
T
Breakdown Voltage Temp. Coefficient ––– 0.066 ––– V/°C
J
Static Drain-to-Source On-Resistance –––
3.0 3.8
Gate Threshold Voltage 2.0 ––– 4.0 V
Forward Transconductance
94 ––– ––– S
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leaka
e ––– ––– -200
Total Gate Charge ––– 170 260 nC
Gate-to-Source Charge ––– 55 –––
Gate-to-Drain ("Miller") Charge ––– 66 –––
Turn-On Delay Time ––– 21 ––– ns
Rise Time ––– 90 –––
Turn-Off Delay Time ––– 92 –––
Fall Time ––– 44 –––
Internal Drain Inductance ––– 4.5 ––– nH Between lead,
Internal Source Inductance ––– 7.5 ––– from package
Input Capacitance ––– 7580 ––– pF
Output Capacitance ––– 970 –––
Reverse Transfer Capacitance ––– 540 –––
Output Capacitance ––– 3750 –––
Output Capacitance ––– 650 –––
Effective Output Capacitance ––– 1110 –––
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I
V
= 10V, ID = 110A
GS
mΩ
V
= VGS, ID = 250µA
DS
= 25V, ID = 110A
V
DS
V
A
= 75V, VGS = 0V
DS
V
= 75V, VGS = 0V, TJ = 125°C
DS
V
= 20V
GS
V
= -20V
GS
I
= 110A
D
V
= 60V
DS
e
= 10V
V
GS
= 38V
V
DD
= 110A
I
D
R
= 2.6Ω
G
V
GS
6mm (0.25in.)
and center of die contact
V
GS
V
DS
ƒ = 1.0MHz, See Fig. 5
V
GS
V
GS
VGS = 0V, VDS = 0V to 60V
d
= 10V
= 0V
= 25V
= 0V, VDS = 1.0V, ƒ = 1.0MHz
= 0V, VDS = 60V, ƒ = 1.0MHz
= 1mA
D
e
D
G
S
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Continuous Source Current ––– ––– 160
(Body Diode) A
Pulsed Source Current ––– ––– 700
(Body Diode)
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge ––– 40 60 nC
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
L=0.026mH, RG = 25Ω, I
, starting TJ = 25°C,
Jmax
AS
= 110A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same
oss
charging time as C
V
.
DSS
oss
while V
is rising from 0 to 80%
DS
MOSFET symbol
showing the
integral reverse
p-n junction diode.
––– ––– 1.3 V
–––3553ns
TJ = 25°C, IS = 110A, VGS = 0V
TJ = 25°C, IF = 110A, VDD = 38V
di/dt = 100A/
Limited by T
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
is measured at TJ of approximately 90°C.
θ
2
Pak, when mounted on 1" square PCB
Conditions
e
s
G
2 www.irf.com
D
S
e
IRF2907ZS-7PPbF
1000
TOP 15V
)
A
(
t
n
e
r
100
r
u
C
e
c
r
u
o
S
o
t
-
10
n
i
a
r
D
,
D
I
4.5V
≤
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1000
TOP 15V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
I
100
4.5V
D
≤
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 175°C
10
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1000
)
Α
(
t
100
n
e
r
r
u
C
e
c
r
10
u
o
S
o
t
n
i
a
r
D
,
D
I
TJ = 175°C
1
TJ = 25°C
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
1 2 3 4 5 6 7 8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
200
)
S
(
e
c
150
n
a
t
c
u
d
n
o
c
s
100
n
a
r
T
d
r
a
w
r
o
50
F
,
s
f
G
TJ = 25°C
TJ = 175°C
V
= 10V
DS
380µs PULSE WIDTH
0
0 25 50 75 100 125 150
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
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