IOR IRF1407S, IRF1407L User Manual
查询IRF1407L供应商
PD -94335
IRF1407S
Benefits
IRF1407L
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
Description
Advanced HEXFET
®
Power MOSFETs from International
G
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for lowprofile applications.
2
Pak is suitable for
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10VX 100V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10VX 70V A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt SX 4.6 V/ns
T
J
T
STG
Pulsed Drain Current QX 520
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche EnergyRX 390 mJ
Avalanche CurrentQ See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche EnergyW mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
Junction-to-Case ––– 0.75 °C/W
Junction-to-Ambient(PCB Mounted,steady-state)** ––– 40
HEXFET® Power MOSFET
D
V
= 75V
DSS
R
DS(on)
= 0.0078Ω
ID = 100AV
S
D2Pak
IRF1407S
TO-262
IRF1407L
°C
www.irf.com 1
10/05/01
IRF1407S/IRF1407L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance U ––– 1100 ––– VGS = 0V, VDS = 0V to 60V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R Starting T
RG = 25Ω, I
S I
SD
TJ ≤ 175°C
T Pulse width ≤ 400µs; duty cycle ≤ 2%.
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Drain-to-Source Breakdown Voltage 75 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA X
J
Static Drain-to-Source On-Resistance ––– ––– 0.0078 Ω VGS = 10V, ID = 78A T
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 74 ––– ––– SVDS = 25V, ID = 78A X
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 75V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 160 250 ID = 78A
Gate-to-Source Charge ––– 35 52 nC VDS = 60V
Gate-to-Drain ("Miller") Charge ––– 54 81 VGS = 10VTX
Turn-On Delay Time ––– 11 ––– VDD = 38V
Rise Time ––– 150 ––– ID = 78A
Turn-Off Delay Time ––– 150 ––– RG = 2.5Ω
ns
Fall Time ––– 140 ––– VGS = 10V TX
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 5600 ––– VGS = 0V
Output Capacitance ––– 890 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 190 ––– ƒ = 1.0KHz, See Fig. 5 X
Output Capacitance ––– 5800 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz
Output Capacitance ––– 560 ––– VGS = 0V, VDS = 60V, ƒ = 1.0KHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) Q
––– –––
––– –––
100V
520
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0VT
Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = 78A
Reverse RecoveryCharge ––– 390 5 90 nC di/dt = 100A/µs
TX
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
U C
eff. is a fixed capacitance that gives the same charging time
oss
= 25°C, L = 0.13mH
J
= 78A. (See Figure 12).
AS
≤ 78A, di/dt ≤ 320A/µs, V
DD
≤ V
(BR)DSS
as C
V Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
W Limited by T
,
oss
while V
is rising from 0 to 80% V
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
DSS
.
avalanche performance.
X Uses IRF1407 data and test conditions.
G
G
D
S
D
S
IRF1407S/IRF1407L
(
)
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
10
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.00
1000
100
10
, Drain-to-Source Current (A)
D
I
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
Tj = 175°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
130A
I =
D
)
(Α
100.00
, Drain-to-Source Current
D
I
10.00
3.0 5.0 7.0 9.0 11.0 13.0
Fig 3. Typical Transfer Characteristics
TJ = 25°C
TJ = 175°C
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
C
Vs. Temperature
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IRF1407S/IRF1407L
)
100000
10000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Ciss
1000
C, Capacitance(pF)
Coss
Crss
100
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.00
SHORTED
ds
15
D
I =
78A
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 40 80 120 160 200
Q , Total Gate Charge (nC
G
V = 60V
DS
V = 37V
DS
V = 15V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA
100.00
TJ = 175°C
10.00
TJ = 25°C
, Reverse Drain Current (A)
1.00
SD
I
0.10
0.0 1.0 2.0 3.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
V
GS
= 0V
1000
100
10
, Drain-to-Source Current (A)
D
I
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10 100 1000
Fig 8. Maximum Safe Operating Area
LIMITED BY RDS(on)
V
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
Forward Voltage
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