IOR IRF1404Z User Manual
Pulsed Drain C
c
Single Pul
d
Single Pul
h
Aval
c
R
g
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PD - 11371
AUTOMOTIVE MOSFET
IRF1404Z
HEXFET® Power MOSFET
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Absolute Maximum Ratings
Parameter Units
ID @ TC = 25°C
ID @ TC = 100°C
I
@ TC = 25°C
D
I
DM
PD @TC = 25°C
V
GS
E
AS (Thermally limited)
(Tested )
E
AS
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
urrent
Power Dissipation W
Linear Derating Factor W/°C
Gate-to-Source Voltage V
se Avalanche Energy
se Avalanche Energy Tested Value
anche Current
epetitive Avalanche Energy
Operating Junction and
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
@ 10V (Silicon Limited)
GS
@ 10V
GS
@ 10V (Package Limited)
GS
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.67
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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D
V
DSS
R
DS(on)
S
ID = 75A
TO-220AB
Max.
190
130
75
750
220
1.5
± 20
320
480
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y
in (1.1Nym)
10 lbf
= 40V
= 3.7mΩ
mJ
mJ
A
A
3/5/03
IRF1404Z
/
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
gfs Forward Transconductance 170 ––– ––– V
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
C
oss
Drain-to-Source Breakdown Voltage 40 ––– ––– V
∆T
Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C
J
Static Drain-to-Source On-Resistance ––– 2.7 3.7
Gate Threshold Voltage 2.0 ––– 4.0 V
VGS = 0V, ID = 250µA
Reference to 25°C, I
mΩ
V
VDS = VGS, ID = 250µA
VDS = 25V, ID = 75A
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Total Gate Charge ––– 100 150
Gate-to-Source Charge ––– 31 ––– nC
Gate-to-Drain ("Miller") Charge ––– 42 –––
Turn-On Delay Time ––– 18 –––
Rise Time ––– 110 –––
Turn-Off Delay Time ––– 36 ––– ns
Fall Time ––– 58 –––
V
V
V
V
I
V
VGS = 10V
VDD = 20V
I
R
VGS = 10V
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
Internal Source Inductanc e ––– 7.5 ––– from pack age
and center of die contact
Input Capacitance ––– 4340 –––
Output Capacitance ––– 1030 –––
Reverse Transfer Capacitance ––– 550 ––– pF
Output Capacitance ––– 3300 –––
Output Capacitance ––– 920 –––
Effective Output Capacitance ––– 1350 –––
VGS = 0V
V
ƒ = 1.0MHz
V
V
V
GS
DS
DS
GS
GS
= 75A
D
DS
= 75A
D
G
DS
GS
GS
GS
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 75
(Body Diode) A
I
V
t
Q
t
SM
SD
rr
rr
on
Pulsed Source Current ––– ––– 750
(Body Diode)
c
Diode Forward Voltage ––– ––– 1.3 V
Reverse Recovery Time ––– 28 42 ns
Reverse Recovery Charge ––– 34 51 nC
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
RG = 25Ω, I
, starting TJ = 25°C, L = 0.11mH
Jmax
= 75A, VGS =10V. Part not
AS
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
Limited by T
oss
while V
is rising from 0 to 80% V
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
= 25°C, IS = 75A, VGS = 0V
J
TJ = 25°C, IF = 75A, VDD = 25V
di/dt = 100A/µs
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Conditions
= 1mA
D
= 10V, ID = 75A
e
= 40V, VGS = 0V
= 40V, VGS = 0V, TJ = 125°C
= 20V
= -20V
= 32V
e
= 3.0 Ω
e
= 25V
= 0V, VDS = 1.0V, ƒ = 1.0MHz
= 0V, VDS = 32V, ƒ = 1.0MHz
= 0V, VDS = 0V to 32V
f
Conditions
e
.
DSS
e
IRF1404Z
1000
)
A
(
t
100
n
e
r
r
u
C
e
c
r
10
u
o
S
-
o
t
-
n
i
a
r
1
D
,
D
I
4.5V
20µs PULSE WIDTH
0.1
0.1 1 10 100
Tj = 25°C
VDS, Drain-to-Source Voltage (V)
1000
)
A
(
t
n
e
r
100
r
u
C
e
c
r
u
o
S
-
o
t
-
10
n
i
a
r
D
,
D
I
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0
TJ = 25°C
TJ = 175°C
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
V
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
GS
1000
V
TOP 15V
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
I
10V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
D
10
0.1 1 10 100
8.0V
GS
4.5V
20µs PULSE WIDTH
Tj = 175°C
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
200
)
S
(
160
e
c
n
a
t
c
u
d
120
n
o
c
s
n
a
r
T
80
d
r
a
w
r
o
F
40
,
s
f
G
0
0 40 80 120 160
ID, Drain-to-Source Current (A)
TJ = 175°C
TJ = 25°C
V
= 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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