IOR IRF1310NS-L User Manual
查询IRF1310NL供应商
l Advanced Process Technology
l Surface Mount (IRF1310NS)
l Low-profile through-hole (IRF1310NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF1310NL) is available for lowprofile applications.
Absolute Maximum Ratings
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 160 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Thermal Resistance
R
θJC
R
θJA
PD - 91514B
IRF1310NS/L
HEXFET® Power MOSFET
D
V
=100V
DSS
G
R
S
2
D Pak
Parameter Max. Units
Pulsed Drain Current 140
Linear Derating Factor 1.1 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 420 mJ
Avalanche Current 22 A
Repetitive Avalanche Energy 16 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Parameter Typ. Max. Units
Junction-to-Case ––– 0.95
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
TO-262
DS(on)
ID = 42A
= 0.036Ω
°C
°C/W
5/13/98
IRF1310NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.036 Ω VGS = 10V, ID = 22A
Gate Threshold Voltage 2 .0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 14 ––– ––– S VDS = 25V, ID = 22A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 110 ID = 22A
Gate-to-Source Charge ––– ––– 15 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 58 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 50V
Rise Time ––– 56 ––– ID = 22A
Turn-Off Delay Time ––– 45 ––– RG = 3.6Ω
ns
Fall Time ––– 40 ––– RD = 2.9Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 1900 ––– VGS = 0V
Output Capacitance ––– 450 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
42
140
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =22A, VGS = 0V
Reverse Recovery Time ––– 180 270 ns TJ = 25°C, IF = 22A
Reverse Recovery Charge ––– 1.2 1.8 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 25°C, L = 1.7mH
J
= 22A. (See Figure 12)
AS
≤ 22A, di/dt ≤ 180A/µs, V
DD
≤ V
(BR)DSS
Uses IRF1310N data and test conditions
,
showing the
A
p-n junction diode.
D
G
S
IRF1310NS/L
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20us PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
o
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20us PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
o
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
36A
100
10
D
I , Drain-to-Source Current (A)
o
T = 25 C
J
o
T = 175 C
J
VDS= 50V
20µS PULSE WIDTH
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
o
10V
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