IOR IRF054 User Manual
查询IRF054供应商
PD - 90640
REPETITIVE A V ALANCHE AND dv/dt RA TED IRF054
HEXFETTRANSISTORS
60V, N-CHANNEL
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF054 60V 0.022Ω 45A*
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
TO-3
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 45 *
ID @ VGS =0V, TC = 100°C Continuous Drain Current 3 1
I
DM
PD @ TC = 25°C Max. Power Dissipation 15 0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 4.5
T
J
T
STG
* Current limited by pin diameter.
For footnotes refer to the last page
Pulsed Drain Current ➀ 220
Linear Derating Factor 1. 2 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 480 mJ
Avalanche Current ➀ -A
Repetitive Avalanche Energy ➀ -mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
www.irf.com 1
A
V/ns
o
C
01/24/01
IRF054
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
∆BV
R
V
g
I
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
GSS
GSS
d(on)
d(off)
DSS
DSS
DS(on)
GS(th)
fs
g
gs
gd
r
f
S + LD
iss
oss
rss
Drain-to-Source Breakdown Voltage 6 0 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.68 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.02 2 VGS = 10V, ID = 31A ➃
Resistance — — 0.025 VGS = 10V, ID =45A ➃
Gate Threshold Voltage 2. 0 — 4.0 V VDS = VGS, ID =250µA
Forward Transconductance 2 0 — — S ( )VDS > 15V, IDS = 31A ➃
Zero Gate Voltage Drain Current — — 2 5 VDS= 48V ,VGS=0V
— — 250 VDS = 48V
Gate-to-Source Leakage Forward — — 1 00 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 8 0 — 18 0 VGS =10V, ID =45A
Gate-to-Source Charge 2 0 — 4 5 nC VDS = 30V
Gate-to-Drain (‘Miller’) Charge 3 4 — 1 05
Turn-On Delay Time — — 3 3 VDD =30V, ID =45A,
Rise Time — — 1 80 RG =2.35Ω
Turn-Off Delay Time — — 10 0
Fall Time — — 1 00
Total Inductance — 6 .1 —
Input Capacitance — 4600 VGS = 0V, VDS = 25V
Output Capacitance — 2000 — pF f = 1.0MHz
Reverse Transfer Capacitance — 3 40 —
Ω
Ω
µA
nA
ns
nH
VGS = 0V, TJ = 125°C
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 45 *
S
I
Pulse Source Current (Body Diode) ➀ — — 220
SM
V
Diode Forward Voltage — — 2.5 V Tj = 25°C, IS = 45A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 28 0 nS Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 2 .2 µC VDD ≤ 50V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
*Current limited by pin diameter.
A
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
For footnotes refer to the last page
2 www.irf.com
Junction to Case — — 0.83
Junction to Ambient — — 30 Typical socket mount
°C/W
+ LD.
IRF054
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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