IOR IR2153 User Manual

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Preliminary Data Sheet No. PD60062 revM
IR2153(D)(S) &(PbF)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on CT pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Internal 50nsec (typ.) bootstrap diode (IR2153D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Also available LEAD-FREE
Product Summary
V
OFFSET
Duty Cycle 50%
Tr/T
p
V
clamp
Deadtime (typ.) 1.2 µs
600V max.
80/40ns
Packages
15.6V
Description
The IR2153D(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incor­porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
8 Lead PDIP
8 Lead SOIC
Typical Connections
VCC
RT
CT
COM
IR2153D
VB
HO
VS
LO
600V MAX
IR2153(S)
VCC
VB
HO
RT
VS
CT
LO
Shutdown
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COM
600V MAX
Shutdown
IR2153(D)(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
LO
V
RT
V
CT
I
CC
I
RT
dVs/dt Allowable offset voltage slew rate -50 50 V/ns
P
D
Rth
JA
J
S
L
High side floating supply voltage -0.3 625
High side floating supply offset voltage VB - 25 VB + 0.3
High side floating output voltage VS - 0.3 V
B
+ 0.3
Low side output voltage -0.3 VCC + 0.3
RT pin voltage -0.3 VCC + 0.3
CT pin voltage -0.3 V
CC
+ 0.3
Supply current (note 1) 25
RT pin current -5 5
Maximum power dissipation @ T
+25°C (8 Lead DIP) 1.0
A
(8 Lead SOIC) 0.625
Thermal resistance, junction to ambient (8 Lead DIP) 125
(8 Lead SOIC) 200
°C/W
Junction temperature -55 150
Storage temperature -55 150 °C
Lead temperature (soldering, 10 seconds) 300
V
mA
W
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol Definition Min. Max. Units
V
Bs
V
S
V
CC
I
CC
J
Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown
Note 2: Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by
Note 3: Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the
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High side floating supply voltage VCC - 0.7 V
Steady state high side floating supply offset voltage -3.0 (note 2) 600
Supply voltage 10 V
CLAMP
V
CLAMP
Supply current (note 3) 5 mA
Junction temperature -40 125 °C
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V
specified in the Electrical Characteristics section.
CLAMP
more than 5V.
voltage at this pin.
IR2153(D)(S) & (PbF)
Recommended Component Values
Symbol Component Min. Max. Units
R
T
C
T
1000000
100000
Timing resistor value 10 k
CT pin capacitor value 330 pF
IR2153 RT vs Frequency
10000
1000
Frequency (Hz)
100
10
10 100 1000 10000 100000 1000000
330pf
470pF
1nF
2.2nF
4.7nF
10nF
CT Values
RT (oh ms)
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