IOR IR2152 User Manual
Preliminary Data Sheet No. PD60035J
recommend IR’s new products IR2154 and IR21541)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
•
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Undervoltage lockout
•
Programmable oscillator frequency
•
f =
1.4 (R 75 ) C
Matched propagation delay for both channels
•
Low side output in phase with R
•
Description
The IR2152 is a high voltage, high speed, selfoscillating power MOSFET and IGBT driver with both
high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The front
end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high
pulse current buffer stage and an internal deadtime
designed for minimum driver cross-conduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating
channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration that
operates off a high voltage rail up to 600 volts.
1
×+ ×
Ω
TT
T
IR2152
(NOTE: For new designs, we
Product Summary
V
OFFSET
Duty Cycle 50%
IO+/ - 100 mA / 210 mA
V
OUT
Deadtime (typ.) 1.2 µs
Packages
8 Lead PDIP
600V max.
10 - 20V
8 Lead SOIC
T ypical Connection
(Refer to Lead Assignment diagram for correct pin configuration)
up to 600V
V
CC
R
T
C
T
V
HO
V
LOCOM
B
S
TO
LOAD
1
IR2152
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
LO
V
RT
V
CT
I
CC
I
RT
dVs/dt Allowable offset supply voltage transient — 50 V/ns
P
D
R
THJA
T
J
T
S
T
L
High side floating supply voltage -0.3 625
High side floating supply offset voltage VB - 25 VB + 0.3
High side floating output voltage VS - 0.3 V
B
+ 0.3
Low side output voltage -0.3 VCC + 0.3
RT voltage -0.3 VCC + 0.3
CT voltage -0.3 V
Supply current (note 1) — 25
RT output vurrent -5 5
CC
+ 0.3
mA
Package power dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0
(8 Lead SOIC) — 0.625
Thermal resistance, junction to ambient (8 Lead DIP) — 125
(8 Lead SOIC) — 200
°C/W
Junction temperature — 150
Storage temperature -55 150 °C
Lead temperature (soldering, 10 seconds) — 300
V
W
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
LO
I
CC
T
A
Note 1: Because of the IR2152’s application specificity toward off-line supply systems, this IC contains a zener clamp
2 www.irf.com
High Side Floating Supply Absolute Voltage VS + 10 VS + 20
High Side Floating Supply Offset Voltage — 600
High Side Floating Output Voltage V
S
Low Side Output Voltage 0 V
V
CC
B
V
Supply Current (Note 1) — 5 mA
Ambient Temperature -40 125 °C
structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC
supply voltage is normally derived by forcing current into the supply lead (typically by means of a high value
resistor connected between the chip VCC and the rectified line voltage and a local decoupling capacitor from
VCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC, low impedance power source of greater than V
CLAMP
.
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