IOR IR2117 User Manual

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Data Sheet No. PD-6.031C
IR2117
SINGLE CHANNEL DRIVER
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
n Gate drive supply range from 10 to 20V n Undervoltage lockout n CMOS Schmitt-triggered inputs with pull-down
Description
The IR2117 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable rugge­dized monolithic construction. The logic input is compatible with standard CMOS outputs. The out­put driver features a high pulse current buffer stage designed for minimum cross-conduction. The float­ing channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configura­tion which operates up to 600 volts.
Product Summary
V
OFFSET
IO+/- 200 mA / 420 mA
V
OUT
t
(typ.) 125 & 105 ns
on/off
Packages
600V max.
10 - 20V
Typical Connection
V
CC
IN
V
CC
COM
up to 600V
V
B
HOIN
V
S
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-75
TO
LOAD
IR2117
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.
Parameter Value
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
IN
dVs/dt Allowable Offset Supply Voltage Transient (Figure 2) 50 V/ns
P
D
R
θJA
T
J
T
S
T
L
High Side Floating Supply Voltage -0.3 625 High Side Floating Supply Offset Voltage VB - 25 VB + 0.3 High Side Floating Output Voltage VS - 0.3 V Logic Supply Voltage -0.3 25 Logic Input Voltage -0.3 V
Package Power Dissipation @ TA +25°C (8 Lead DIP) 1.0
(8 Lead SOIC) 0.625
Thermal Resistance, Junction to Ambient (8 Lead DIP) 125
(8 Lead SOIC) 200 Junction Temperature 150 Storage Temperature -55 150 °C Lead Temperature (Soldering, 10 seconds) 300
+ 0.3 V
B
+ 0.3
CC
W
°C/W
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The V
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
IN
T
A
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS.
B-76 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
High Side Floating Supply Absolute Voltage VS + 10 VS + 20 High Side Floating Supply Offset Voltage Note 1 600 High Side Floating Output Voltage V Logic Supply Voltage 10 2 0 Logic Input Voltage 0 V Ambient Temperature -40 125 °C
offset rating is tested with all supplies biased at 15V differential.
S
Parameter Value
S
V
B
CC
V
IR2117
Dynamic Electrical Characteristics
V
(VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics
BIAS
are measured using the test circuit shown in Figure 3.
Parameter Value
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
t
off
t t
Static Electrical Characteristics
V
(VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
BIAS
COM. The V
Symbol Definition Min. Typ. Max. Units Test Conditions
V
V
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
BSUV+
V
BSUV-
V
CCUV+
V
CCUV-
I
O+
I
O-
Turn-On Propagation Delay 125 200 VS = 0V Tur n-Off Propagation Delay 105 180 VS = 600V Turn-On Rise Time 80 130
r
Tur n-Off Fall Time 40 65
f
and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
O
ns
Parameter Value
Logic “1” Input Voltage 6.4 VCC = 10V
IH
9.5 VCC = 15V
12.6 VCC = 20V
Logic “0” Input Voltage 3.8 VCC = 10V
IL
——6.0 VCC = 15V
——8.3 VCC = 20V High Level Output V oltage, V Low Level Output Voltage , V
BIAS
O
- V
O
100 IO = 0A
100 IO = 0A Offset Supply Leakage Current 50 VB = VS = 600V Quiescent VBS Supply Current 50 24 0 V Quiescent VCC Supply Current 70 340 µA VIN = 0V or V Logic “1” Input Bias Current 20 40 VIN = V Logic “0” Input Bias Current 1.0 VIN = 0V VBS Supply Undervoltage Positive Going Threshold 7.6 8.6 9.6 VBS Supply Undervoltage Negative Going Threshold 7.2 8.2 9.2 VCC Supply Undervoltage Positive Going Threshold 7.6 8.6 9.6 VCC Supply Undervoltage Negative Going Threshold 7.2 8.2 9.2 Output High Short Circuit Pulsed Current 200 250 VO = 0V, V
Output Low Short Circuit Pulsed Current 420 500 VO = 15V, V
V
mV
V
mA
= 0V or V
IN
IN
PW10 µs
PW10 µs
CC
IN
= V
= 0V
CC CC
CC
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-77
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