查询IR2113L6供应商
PD - 91883
IR2113L6
HIGH AND LOW SIDE DRIVER
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Product Summary
V
OFFSET
IO+/- 2A / 2A
V
OUT
t
(typ.) 120 & 94 ns
on/off
600V max.
10 - 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
Delay Matching 10 ns
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
Description
The IR2113L6 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or
LSTTL outputs. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol Parameter Min. Max. Units
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dVS/dt Allowable Offset Supply Voltage Transient (Fig. 16) — 50 V/ns
P
D
R
thJA
T
j
T
S
T
L
High Side Floating Supply Absolute Voltage -0.5 VS + 20
High Side Floating Supply Offset Voltage — 600
CC
DD
B
+ 0.5
+ 0.5
+ 0.5
V
°C
High Side Output Voltage VS -0.5 V
Low Side Fixed Supply Voltage -0.5 20
Low Side Output Voltage -0.5 VCC + 0.5
Logic Supply Voltage -0.5 VSS + 20
Logic Supply Offset Voltage VCC - 20 V
Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 V
Package Power Dissipation @ TA ≤ = 25°C (Fig. 19) — 1.6 W
Thermal Resistance, Junction to Ambient — 75 °C/W
Junction Temperature -55 125
Storage Temperature -55 150
Package Mounting Surface Temperature 300
Weight
1.5 (typical) g
www.irf.com 1
4/13/99
IR2113L6
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in Figures 36 and 37.
Symbol Parameter Min. Max. Units
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
Dynamic Electrical Characteristics
V
(VCC, VBS, VDD) = 15V, and VSS = COM unless otherwise specified. The dynamic electrical characteristics are
BIAS
measured using the test circuit shown in Figure 3.
t
on
t
off
t
sd
t
r
t
f
Mt Delay Matching, HS & LS Turn-On/Off — — 10 — — Hton-Lt
High Side Floating Supply Absolute Voltage VS + 10 VS + 20
High Side Floating Supply Offset Voltage -4 600
High Side Output Voltage V
S
V
B
Low Side Fixed Supply Voltage 10 20
Low Side Output Voltage 0 V
CC
Logic Supply Voltage VSS + 5 VSS + 20
Logic Supply Offset Voltage -5 5
Logic Input Voltage (HIN, LIN & SD) V
Tj = 25°C
Tj = -55 to
SS
V
DD
125°C
Parameter Min Typ. Max. Min. Max Units Test Conditions
Turn-On Propagation Delay — 120 150 — 260 VS = 0V
Turn-Off Propagation Dela y — 94 125 — 220 VS = 600V
Shutdown Propagation Delay — 110 140 — 235 ns VS = 600V
Turn-On Rise Time — 25 35 — 50 CL = 1000pf
Turn-Off Fall Time — 17 25 — 40 CL = 1000pf
/ Ht
on
-Lt
off
off
V
T ypical Connection
V
DD
HIN
SD
LIN
V
SS
V
CC
V
HIN
SD
LIN
V
HO
V
COM
LO
V
B
V
S
CC
DD
SS
up to 500V
6
TO
LOAD
2 www.irf.com
IR2113L6
Static Electrical Characteristics
V
(VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and
BIAS
IIN parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD.
The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or
LO.
Tj = 25°C
Symbol Parameter Min Typ. Max. Min. Ma x Un its Test Conditions
V
V
V
V
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
V
V
V
V
I
O+
I
O-
Logic “1” Input Voltage 9.5 — — 10 — VDD = 15V
IH
Logic “0” Input Voltage — — 6.0 — 5.7 VDD = 15V
IL
High Level Output Voltage, V
OH
Low Level Output Voltage, VO — — 0.1 — 0.1 VIN = VIH, IO = 0A
OL
Offset Supply Leakage Current — — 50 — 250 VB = VS = 600V
Quiescent VBS Supply Current — 125 230 — 500 V
Quiescent VCC Supply Current — 180 340 — 600 V
Quiescent VDD Supply Current — 5.0 30 — 60 V
Logic “1” Input Bias Current — 15 40 — 70 VIN = VDD
Logic “0” Input Bias Current — — 1.0 — 10 VIN = 0V
BSUV+VBS
BSUV-VBS
CCUV+VCC
CCUV-VCC
Supply Undervoltage Positive 7.5 8 .6 9. 7 — —
Going Threshold
Supply Undervoltage Negative 7.0 8.2 9.4 — —
Going Threshold
Supply Undervoltage Positive 7.4 8. 5 9 .6 — —
Going Threshold
Supply Undervoltage Negative 7.0 8.2 9.4 — —
Going Threshold
Output High Short Circuit Pulsed 2.0 ———— VO = 0V , VIN = VDD
Current PW < = 10
Output Low Short Circuit Pulsed 2.0 ———— VO = 15V, VIN = 0V
Current PW < = 10
- VO— 0.7 1.2 — 1.5 VIN = VIH, IO = 0A
BIAS
Tj = -55 to
125°C
V
µA
V
A
= 0V or VDD
IN
= 0V or VDD
IN
= 0 or VDD
IN
µs
µs
www.irf.com 3
IR2113L6
6
Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test
50%
t
on
6
(0 to 600V)
HIN
LIN
Circuit
t
r
90% 90%
50%
t
off
t
f
HO
LO
Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition
HIN
LIN
SD
50%
10% 10%
50%
LO
50%
HO
10%
MT
90%
HO
LO
t
sd
90%
MT
HOLO
Figure 6. Delay Matching Waveform DefinitionsFigure 3. Shutdown Waveform Definitions
4 www.irf.com
IR2113L6
250
200
150
Max.
Typ.
100
Turn-On Delay Time (ns)
50
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
250
200
Max.
Typ.
150
100
Turn-On Delay Time (ns)
50
0
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. Voltage
250
200
150
Max.
100
Typ.
Turn-Off Delay Time (ns)
50
250
200
Max.
150
Typ.
100
Turn-Off Delay Time (ns)
50
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
0
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 8A. Turn-Off Time vs. Temperature Figure 8B. Turn-Off Time vs. Voltage
250
200
150
Max.
100
Typ.
Shutdown Delay Time (ns)
50
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 9A. Shutdown Time vs. Temperature
250
200
Max.
150
Typ.
100
Shutdown Delay time (ns)
50
0
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 9B. Shutdown Time vs. Voltage
www.irf.com 5
IR2113L6
100
80
60
40
Max.
Turn-On Rise Time (ns)
Typ.
20
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 10A. Turn-On Rise Time vs. Temperature
50
40
30
Max.
20
Typ.
Turn-Off Fall Time (ns)
10
100
80
60
Max.
40
Typ.
Turn-On Rise Time (ns)
20
0
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 10B. Turn-On Rise Time vs. Voltage
50
40
30
20
Max.
Turn-Off Fall Time (ns)
Typ.
10
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
0
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 11A. Turn-Off Fall Time vs. Temperature Figure 11B. Turn-Off Fall Time vs. Voltage
15.0
12.0
Min.
9.0
6.0
Logic "1" Input Threshold (V)
3.0
0.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
15.0
12.0
9.0
6.0
Min.
Logic "1" Input Threshold (V)
3.0
0.0
5 7.5 10 12.5 15 17. 5 20
Logic Supply Voltage (V)
V
DD
Figure 12A. Logic “1” Input Threshold vs. Temperature Figure 12B. Logic “1” Input Threshold vs. Voltage
6 www.irf.com
IR2113L6
15.0
12.0
9.0
Max.
6.0
Logic "0" Input Threshold (V)
3.0
0.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 13A. Logic “0” Input Threshold vs. Tempera-
ture
5.00
4.00
3.00
2.00
Max.
High Level Output Voltage (V)
1.00
15.0
12.0
9.0
6.0
Logic "0" Input Threshold (V)
3.0
Max.
0.0
5 7.5 10 12.5 15 17. 5 20
Logic Supply Voltage (V)
V
DD
Figure 13B. Logic “0” Input Threshold vs. Voltage
5.00
4.00
3.00
2.00
Max.
High Level Output Voltage (V)
1.00
0.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
0.00
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 14A. High Level Output vs. Temperature Figure 14B. High Level Output vs. Voltage
1.00
0.80
0.60
0.40
Low Level Output Voltage (V)
0.20
Max.
0.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
15.0
12.0
9.0
6.0
Min.
Logic "1" Input Threshold (V)
3.0
0.0
5 7.5 10 12.5 15 17. 5 20
Logic Supply Voltage (V)
V
DD
Figure 15B. Low Level Output vs. VoltageFigure 15A. Low Level Output vs. Temperature
www.irf.com 7
IR2113L6
500
400
300
200
100
Offset Supply Leakage Current (µA)
Max.
0
-50 -25 0 25 50 75 100 125
500
400
300
Max.
200
Supply Current (µA)
BS
V
Typ.
100
Temperature (°C)
500
400
300
200
Offset Supply Leakage Current (µA)
100
Max.
0
0 100 200 300 400 500
Boost Voltage (V)
V
B
Figure 16B. Offset Supply Current vs. VoltageFigure 16A. Offset Supply Current vs. Temperature
500
400
300
200
Supply Current (µA)
BS
Max.
V
100
Typ.
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
0
10 12 14 16 18 20
Floating Supply Voltage (V)
V
BS
Figure 17A. VBS Supply Current vs. Temperature Figure 17B. VBS Supply Current vs. Voltage
625
500
375
Max.
250
Supply Current (µA)
CC
V
Typ.
125
0
-50 -25 0 25 50 75 100 125
Figure 18A. V
Temperature (°C)
Supply Current vs. Temperature Figure 18B. V
CC
625
500
375
250
Supply Current (µA)
CC
Max.
V
125
Typ.
0
10 12 14 16 18 20
Fixed Supply Voltage (V)
V
CC
Supply Current vs. Voltage
CC
8 www.irf.com
IR2113L6
100
80
60
40
Supply Current (µA)
DD
V
Max.
20
Typ.
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 19A. VDD Supply Current vs. Temperature Figure 19B. V
100
80
60
40
Max.
Logic "1" Input Bias Current (µA)
20
Typ.
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
100
80
60
40
Supply Current (µA)
DD
V
Max.
20
Typ.
0
5 7.5 10 12.5 15 17.5 20
100
80
60
40
Logic "1" Input Bias Current (µA)
Max.
20
Typ.
0
5 7.5 10 12.5 15 17.5 20
Logic Supply Voltage (V)
V
DD
Supply Current vs. Voltage
DD
Logic Supply Voltage (V)
V
DD
Figure 20A. Logic “1” Input Current vs. Temperature Figure 20B. Logic “1” Input Current vs. Voltage
5.00
4.00
3.00
2.00
Max.
Logic "0" Input Bias Current (µA)
1.00
0.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
5.00
4.00
3.00
2.00
Max.
Logic "0" Input Bias Current (µA)
1.00
0.00
5 7.5 10 12.5 15 17.5 20
Logic Supply Voltage (V)
V
DD
Figure 21A. Logic “0” Input Current vs. Temperature Figure 21B. Logic “0” Input Current vs. Voltage
www.irf.com 9
IR2113L6
11.0
10.0
Max.
9.0
Typ.
8.0
Undervoltage Lockout + (V)
Min.
BS
V
7.0
6.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
11.0
10.0
Max.
9.0
Typ.
8.0
Undervoltage Lockout - (V)
BS
V
7.0
Min.
6.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 22. VBS Undervoltage (+) vs. Temperature Figure 23. VBS Undervoltage (-) vs. Temperature
11.0
10.0
Max.
9.0
Typ.
8.0
Undervoltage Lockout + (V)
Min.
CC
V
7.0
11.0
10.0
Max.
9.0
Typ.
8.0
Undervoltage Lockout - (V)
CC
V
7.0
Min.
6.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
6.0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 24. VCC Undervoltage (+) vs. Temperature Figure 25. VCC Undervoltage (-) vs. Temperature
5.00
4.00
Typ.
3.00
Min.
2.00
Output Source Current (A)
1.00
0.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
5.00
4.00
3.00
2.00
Typ.
Output Source Current (A)
1.00
Min.
0.00
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 26A. Output Source Current vs. Temperature Figure 26B. Output Source Current vs. Voltage
10 www.irf.com
IR2113L6
V
5.00
4.00
Typ.
3.00
Min.
2.00
Output Sink Current (A)
1.00
0.00
-50 -25 0 25 50 75 100 125
150
125
100
75
50
Junction Temperature (°C)
25
Temperature (°C)
320V
140V
10V
5.00
4.00
3.00
2.00
Typ.
Output Sink Current (A)
1.00
Min.
0.00
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 27B. Output Sink Current vs. VoltageFigure 27A. Output Sink Current vs. Temperature
150
125
100
75
50
Junction Temperature (°C)
25
320V
140
10V
0
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
Figure 28. IR2110 TJ vs. Frequency (IRFBC20)
R
GATE
150
125
100
75
50
Junction Temperature (°C)
25
0
1E+2 1E+3 1E+4 1E+5 1E+6
ΩΩ
= 33
Ω, VCC = 15V
ΩΩ
Frequency (Hz)
Figure 30. IR2110 TJ vs. Frequency (IRFBC40)
R
GATE
ΩΩ
= 15
Ω, VCC = 15V
ΩΩ
320V 140V
10V
0
1E+2 1E+3 1E+4 1E +5 1E+6
Frequency (Hz)
Figure 29. IR2110 TJ vs. Frequency (IRFBC30)
R
GATE
150
125
100
75
50
Junction Temperature (°C)
25
0
1E+2 1E+3 1E+4 1E +5 1E+6
ΩΩ
= 22
Ω, VCC = 15V
ΩΩ
Frequency (Hz)
Figure 31. IR2110 TJ vs. Frequency (IRFPE50)
R
GATE
ΩΩ
= 10
Ω, VCC = 15V
ΩΩ
320V 140V
10V
www.irf.com 11
IR2113L6
150
125
100
75
50
Junction Temperature (°C)
25
0
1E+2 1E+3 1E+4 1E +5 1E+6
Frequency (Hz)
320V 140V
Figure 32. IR2110S TJ vs. Frequency (IRFBC20)
ΩΩ
= 33
Ω, VCC = 15V
ΩΩ
320V 140V
150
125
100
75
50
Junction Temperature (°C)
25
R
GATE
150
125
100
10V
75
50
Junction Temperature (°C)
25
0
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
320V 140V
10V
Figure 33. IR2110S TJ vs. Frequency (IRFBC30)
R
GATE
150
10V
125
100
75
50
Junction Temperature (°C)
25
ΩΩ
= 22
Ω, VCC = 15V
ΩΩ
320V 140V 10V
0
1E+2 1E+3 1E+4 1E +5 1E+6
Frequency (Hz)
Figure 34. IR2110S TJ vs. Frequency (IRFBC40)
R
GATE
0.0
-2.0
Typ.
-4.0
-6.0
Offset Supply Voltage (V)
S
V
-8.0
-10.0
10 12 14 16 18 20
ΩΩ
= 15
Ω, VCC = 15V
ΩΩ
Floating Supply Voltage (V)
V
BS
Figure 36. Maximum VS Negative Offset vs.
VBS Supply Voltage
0
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
Figure 35. IR2110S TJ vs. Frequency (IRFPE50)
R
GATE
20.0
16.0
12.0
8.0
Typ.
Logic Supply Offset Voltage (V)
SS
V
4.0
0.0
10 12 14 16 18 20
ΩΩ
= 10
Ω, VCC = 15V
ΩΩ
Fixed Supply Voltage (V)
V
CC
Figure 37. Maximum VSS Positive Offset vs.
VCC Supply Voltage
12 www.irf.com
Functional Block Diagram
V
DD
RSQ
HIN
SD
LIN
RSQ
V
SS
VDD/V
LEVEL
SHIFT
VDD/V
LEVEL
SHIFT
IR2113L6
V
UV
DETECT
HV
LEVEL
CC
PULSE
GEN
CC
SHIFT
PULSE
FILTER
UV
DETECT
DELAY
RQ
R
S
B
HO
V
S
V
CC
LO
COM
Lead Definitions
Lead
Symbol Description
V
DD
HIN Logic input for high side gate driver output (HO), in phase
SD Logic input for shutdown
LIN Logic input for low side gate driver output (LO), in phase
V
SS
V
B
HO High side gate drive output
V
S
V
CC
LO Low side gate drive output
COM Low side return
www.irf.com 13
Logic supply
Logic ground
High side floating supply
High side floating supply return
Low side supply
IR2113L6
Case Outline and Dimensions — MO-036AB
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 4/99
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
14 www.irf.com
Loading...