IOR IR2113L6 User Manual
查询IR2113L6供应商
PD - 91883
IR2113L6
HIGH AND LOW SIDE DRIVER
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Product Summary
V
OFFSET
IO+/- 2A / 2A
V
OUT
t
(typ.) 120 & 94 ns
on/off
600V max.
10 - 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
Delay Matching 10 ns
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
Description
The IR2113L6 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or
LSTTL outputs. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol Parameter Min. Max. Units
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dVS/dt Allowable Offset Supply Voltage Transient (Fig. 16) — 50 V/ns
P
D
R
thJA
T
j
T
S
T
L
High Side Floating Supply Absolute Voltage -0.5 VS + 20
High Side Floating Supply Offset Voltage — 600
CC
DD
B
+ 0.5
+ 0.5
+ 0.5
V
°C
High Side Output Voltage VS -0.5 V
Low Side Fixed Supply Voltage -0.5 20
Low Side Output Voltage -0.5 VCC + 0.5
Logic Supply Voltage -0.5 VSS + 20
Logic Supply Offset Voltage VCC - 20 V
Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 V
Package Power Dissipation @ TA ≤ = 25°C (Fig. 19) — 1.6 W
Thermal Resistance, Junction to Ambient — 75 °C/W
Junction Temperature -55 125
Storage Temperature -55 150
Package Mounting Surface Temperature 300
Weight
1.5 (typical) g
www.irf.com 1
4/13/99
IR2113L6
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical
ratings at other bias conditions are shown in Figures 36 and 37.
Symbol Parameter Min. Max. Units
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
Dynamic Electrical Characteristics
V
(VCC, VBS, VDD) = 15V, and VSS = COM unless otherwise specified. The dynamic electrical characteristics are
BIAS
measured using the test circuit shown in Figure 3.
t
on
t
off
t
sd
t
r
t
f
Mt Delay Matching, HS & LS Turn-On/Off — — 10 — — Hton-Lt
High Side Floating Supply Absolute Voltage VS + 10 VS + 20
High Side Floating Supply Offset Voltage -4 600
High Side Output Voltage V
S
V
B
Low Side Fixed Supply Voltage 10 20
Low Side Output Voltage 0 V
CC
Logic Supply Voltage VSS + 5 VSS + 20
Logic Supply Offset Voltage -5 5
Logic Input Voltage (HIN, LIN & SD) V
Tj = 25°C
Tj = -55 to
SS
V
DD
125°C
Parameter Min Typ. Max. Min. Max Units Test Conditions
Turn-On Propagation Delay — 120 150 — 260 VS = 0V
Turn-Off Propagation Dela y — 94 125 — 220 VS = 600V
Shutdown Propagation Delay — 110 140 — 235 ns VS = 600V
Turn-On Rise Time — 25 35 — 50 CL = 1000pf
Turn-Off Fall Time — 17 25 — 40 CL = 1000pf
/ Ht
on
-Lt
off
off
V
T ypical Connection
V
DD
HIN
SD
LIN
V
SS
V
CC
V
HIN
SD
LIN
V
HO
V
COM
LO
V
B
V
S
CC
DD
SS
up to 500V
6
TO
LOAD
2 www.irf.com
IR2113L6
Static Electrical Characteristics
V
(VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and
BIAS
IIN parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD.
The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or
LO.
Tj = 25°C
Symbol Parameter Min Typ. Max. Min. Ma x Un its Test Conditions
V
V
V
V
I
LK
I
QBS
I
QCC
I
QDD
I
IN+
I
IN-
V
V
V
V
I
O+
I
O-
Logic “1” Input Voltage 9.5 — — 10 — VDD = 15V
IH
Logic “0” Input Voltage — — 6.0 — 5.7 VDD = 15V
IL
High Level Output Voltage, V
OH
Low Level Output Voltage, VO — — 0.1 — 0.1 VIN = VIH, IO = 0A
OL
Offset Supply Leakage Current — — 50 — 250 VB = VS = 600V
Quiescent VBS Supply Current — 125 230 — 500 V
Quiescent VCC Supply Current — 180 340 — 600 V
Quiescent VDD Supply Current — 5.0 30 — 60 V
Logic “1” Input Bias Current — 15 40 — 70 VIN = VDD
Logic “0” Input Bias Current — — 1.0 — 10 VIN = 0V
BSUV+VBS
BSUV-VBS
CCUV+VCC
CCUV-VCC
Supply Undervoltage Positive 7.5 8 .6 9. 7 — —
Going Threshold
Supply Undervoltage Negative 7.0 8.2 9.4 — —
Going Threshold
Supply Undervoltage Positive 7.4 8. 5 9 .6 — —
Going Threshold
Supply Undervoltage Negative 7.0 8.2 9.4 — —
Going Threshold
Output High Short Circuit Pulsed 2.0 ———— VO = 0V , VIN = VDD
Current PW < = 10
Output Low Short Circuit Pulsed 2.0 ———— VO = 15V, VIN = 0V
Current PW < = 10
- VO— 0.7 1.2 — 1.5 VIN = VIH, IO = 0A
BIAS
Tj = -55 to
125°C
V
µA
V
A
= 0V or VDD
IN
= 0V or VDD
IN
= 0 or VDD
IN
µs
µs
www.irf.com 3
IR2113L6
6
Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test
50%
t
on
6
(0 to 600V)
HIN
LIN
Circuit
t
r
90% 90%
50%
t
off
t
f
HO
LO
Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition
HIN
LIN
SD
50%
10% 10%
50%
LO
50%
HO
10%
MT
90%
HO
LO
t
sd
90%
MT
HOLO
Figure 6. Delay Matching Waveform DefinitionsFigure 3. Shutdown Waveform Definitions
4 www.irf.com
IR2113L6
250
200
150
Max.
Typ.
100
Turn-On Delay Time (ns)
50
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
250
200
Max.
Typ.
150
100
Turn-On Delay Time (ns)
50
0
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. Voltage
250
200
150
Max.
100
Typ.
Turn-Off Delay Time (ns)
50
250
200
Max.
150
Typ.
100
Turn-Off Delay Time (ns)
50
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
0
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 8A. Turn-Off Time vs. Temperature Figure 8B. Turn-Off Time vs. Voltage
250
200
150
Max.
100
Typ.
Shutdown Delay Time (ns)
50
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 9A. Shutdown Time vs. Temperature
250
200
Max.
150
Typ.
100
Shutdown Delay time (ns)
50
0
10 12 14 16 18 20
Supply Voltage (V)
V
BIAS
Figure 9B. Shutdown Time vs. Voltage
www.irf.com 5
Loading...