IOR IR2113E6 User Manual

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PD - 91882

IR2113E6

HIGH AND LOW SIDE DRIVER

Features

n Floating channel designed for bootstrap operation

Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V

Product Summary

V

OFFSET

IO+/- 2A / 2A

V

OUT

t

(typ.) 120 & 94 ns

on/off

600V max.

10 - 20V

Logic and power ground ±5V offset

n CMOS Schmitt-triggered inputs with pull-down

Delay Matching 10 ns

n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs

Description

The IR2113E6 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the

high side configuration which operates up to 600 volts.

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35.

Symbol Parameter Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

DD

V

SS

V

IN

dVS/dt Allowable Offset Supply Voltage Transient (Fig. 16) — 50 V/ns

P

D

R

thJA

T

j

T

S

T

L

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High Side Floating Supply Absolute Voltage -0.5 VS + 20 High Side Floating Supply Offset Voltage — 600

CC DD

B

+ 0.5

V

°C

High Side Output Voltage VS -0.5 V Low Side Fixed Supply Voltage -0.5 20 Low Side Output Voltage -0.5 VCC + 0.5 Logic Supply Voltage -0.5 VSS + 20 Logic Supply Offset Voltage VCC - 20 V Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 V

Package Power Dissipation @ TA ≤ = 25°C (Fig. 19) — 1.6 W Thermal Resistance, Junction to Ambient — 125 °C/W Junction Temperature -55 125 Storage Temperature -55 150 Package Mounting Surface Temperature 300 (for 5 seconds) Weight

0.45 (typical) g

4/13/99

IR2113E6

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. Typical ratings at other bias conditions are shown in Figures 36 and 37.

Symbol Parameter Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

DD

V

SS

V

IN

Dynamic Electrical Characteristics

V

(VCC, VBS, VDD) = 15V, CL = 1000 pF, T

BIAS

The dynamic electrical characteristics are measured using the test circuit shown in Figure 3.

High Side Floating Supply Absolute Voltage VS + 10 VS + 20 High Side Floating Supply Offset Voltage -4 600 High Side Output Voltage V

S

V

B

Low Side Fixed Supply Voltage 10 20 Low Side Output Voltage 0 V

CC

Logic Supply Voltage VSS + 5 VSS + 20 Logic Supply Offset Voltage -5 5 Logic Input Voltage (HIN, LIN & SD) V

= 25°C and VSS = COM unless otherwise specified.

A

SS

V

DD

V

Tj = 25°C

Tj = -55 to

125°C

Parameter Min Typ . Max. Min. Max Units Test Conditions

t t

t t t

Turn-On Propagation Delay — 120 150 — 260 VS = 0V

on

Turn-Off Propagation Delay — 94 125 — 220 VS = 600V

off

Shutdown Propagation Delay — 110 140 — 235 ns VS = 600V

sd

Turn-On Rise Time — 25 35 — 50 CL = 1000pf

r

Turn-Off Fall Time — 17 25 — 40 CL = 1000pf

f

Mt Delay Matching, HS & LS Turn-On/Off — — 10 — — Hton-Lt

T ypical Connection

HO V HIN

SD LIN

V

V HIN SD LIN V

DD

SS

DD

SS

CC

V

COM

LO

V

B

V

S

CC

on

/

up to 500V

6

Ht

-Lt

off

TO

LOAD

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IR2113E6

Static Electrical Characteristics

V

(VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and

BIAS IIN parameters are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or

LO.

Tj = 25°C

Symbol Parameter Min Typ. Max. Min. Max Units Test Conditions

V

I

V

I

Logic “1” Input V oltage 9.5 — — 10 — VDD = 15V

IH

Logic “0” Input V oltage — — 6.0 — 5.7 VDD = 15V

IL

High Level Output Voltage, V

OH

Low Level Output Voltage, VO — — 0.1 — 0.1 VIN = VIH, IO = 0A

OL

Offset Supply Leakage Current — — 50 — 250 VB = VS = 600V

LK

Quiescent VBS Supply Current — 125 230 — 500 V

QBS

Quiescent VCC Supply Current — 180 340 — 600 V

QCC

Quiescent VDD Supply Current — 5.0 30 — 60 V

QDD

Logic “1” Input Bias Current — 15 40 — 70 VIN = 15V

IN+

Logic “0” Input Bias Current — — 1.0 — 10 VIN = 0V

IN-

BSUV+VBS

BSUV-VBS

CCUV+VCC

CCUV-VCC

O+

O-

Supply Undervoltage Positive 7. 5 8.7 9. 7 — —

Going Threshold

Supply Undervoltage Negative 7.0 8.3 9.4 — —

Going Threshold

Supply Undervoltage Positive 7.4 8.6 9.6 — —

Going Threshold

Supply Undervoltage Negative 7.0 8.2 9.4 — — Going Threshold Output High Short Circuit Pulsed 2.0 — — — — VO UT= 0V, VIN =15 V Current PW < = 10 Output Low Short Circuit Pulsed 2.0 — — — — V Current PW < = 10

- VO— 0.7 1.2 — 1.5 VIN = VIH, IO = 0A

BIAS

Tj = -55 to

125°C

V

µA

V

A

= VIH or VIL

IN

= VIH or VIL

IN

=VIH or VIL

IN

= 15V, VIN = 0V

OUT

µs µs

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IR2113E6

131313

4

11 13

14 15

17

8

6 9

Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test

Circuit

4 8 2

11

13

14

15

8

4

6 9

HIN

6

LIN

50%

t

on

t

r

50%

t

off

t

f

90% 90%

2

17

HO LO

10% 10%

Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition

HIN

50%

LIN

SD

50%

LO

HO

10%

MT

90%

HO LO

t

sd

MT

90%

HOLO

Figure 6. Delay Matching Waveform DefinitionsFigure 3. Shutdown Waveform Definitions

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IR2113E6

250

200

150

Max.

Typ.

100

Turn-On Delay Time (ns)

50

0

-50 -25 0 25 50 75 100 125 Temperature (°C)

250

200

Max.

Typ.

150

100

Turn-On Delay Time (ns)

50

0

10 12 14 16 18 20

Supply Voltage (V)

V

BIAS

Figure 7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. Voltage

250

200

150

Max.

100

Typ.

Turn-Off Delay Time (ns)

50

250

200

Max.

150

Typ.

100

Turn-Off Delay Time (ns)

50

0

-50 -25 0 25 50 75 100 125 Temperature (°C)

0

10 12 14 16 18 20

Supply Voltage (V)

V

BIAS

Figure 8A. Turn-Off Time vs. Temperature Figure 8B. Turn-Off Time vs. Voltage

250

200

150

Max.

100

Typ.

Shutdown Delay Time (ns)

50

0

-50 -25 0 25 50 75 100 125 Temperature (°C)

Figure 9A. Shutdown Time vs. Temperature

250

200

Max.

150

Typ.

100

Shutdown Delay time (ns)

50

0

10 12 14 16 18 20

Supply Voltage (V)

V

BIAS

Figure 9B. Shutdown Time vs. Voltage

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